METHOD FOR REMOVING CONTAMINATION FROM A SUBSTRATE AND FOR MAKING A CLEANING SOLUTION

    公开(公告)号:MY150857A

    公开(公告)日:2014-03-14

    申请号:MYPI20064607

    申请日:2006-11-30

    Applicant: LAM RES CORP

    Abstract: A METHOD IS PROVIDED FOR REMOVING CONTAMINATION FROM A SUBSTRATE. THE METHOD INCLUDES APPLYING A CLEANING SOLUTION HAVING A DISPERSED PHASE, A CONTINUOUS PHASE AND PARTICLES DISPERSED WITHIN THE CONTINUOUS PHASE TO A SURFACE OF THE SUBSTRATE. THE METHOD INCLUDES FORCING ONE OF THE PARTICLES DISPERSED WITHIN THE CONTINUOUS PHASE PROXIMATE TO ONE OF THE SURFACE CONTAMINANTS. THE FORCING IS SUFFICIENT TO OVERCOME ANY REPULSIVE FORCES BETWEEN THE PARTICLES AND THE SURFACE CONTAMINANTS SO THAT THE ONE OF THE PARTICLES AND THE ONE OF THE SURFACE CONTAMINANTS ARE ENGAGED. THE METHOD ALSO INCLUDES REMOVING THE ENGAGED PARTICLE AND SURFACE CONTAMINANT FROM THE SURFACE OF THE SUBSTRATE. A PROCESS TO MANUFACTURE THE CLEANING MATERIAL IS ALSO PROVIDED.

    PROXIMITY HEAD WITH ANGLED VACUUM CONDUIT SYSTEM, APPARATUS AND METHOD

    公开(公告)号:SG176462A1

    公开(公告)日:2011-12-29

    申请号:SG2011081833

    申请日:2008-02-22

    Applicant: LAM RES CORP

    Abstract: A proximity head including a head surface. The head surface including a first flat region and a plurality of first conduits. Each one of the plurality of first conduits being defined by corresponding one of a plurality of first discrete holes. The plurality of first discrete holes residing in the head surface and extending through the first flat region. The head surface also including a second flat region and a plurality of second conduits. The plurality of second conduits being defined by a corresponding plurality of second discrete holes that reside in the head surface and extend through the second flat region. The head surface also including a third flat region disposed between and adjacent to the first flat region and the second flat region and a plurality of third conduits. The plurality of third conduits being defined by a corresponding plurality of third discrete holes that reside in the head surface and extend through the third flat region. The third conduits being formed at a first angle relative to the third flat region. The first angle being between 30 and 60 degrees. A system and method for processing a substrate with a proximity head is also described.(Fig. 2A)

    METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS USING COMPRESSED AND/OR PRESSURIZED FOAMS, BUBBLES AND/OR LIQUIDS

    公开(公告)号:MY140370A

    公开(公告)日:2009-12-31

    申请号:MYPI20045251

    申请日:2004-12-20

    Applicant: LAM RES CORP

    Abstract: An apparatus and method are disclosed in which a semiconductor substrate having a surface containing contaminants is cleaned or otherwise subjected to chemical treatment using a foam. The semiconductor wafer is supported either on a stiff support (or a layer of foam) and foam is provided on the opposite surface of the semiconductor wafer while the semiconductor wafer is supported. The foam contacting the semiconductor wafer is pressurized using a form to produce a jammed foam. Relative movement between the form and the semiconductor wafer. such as oscillation parallel and/or perpendicular to the top surface of the semiconductor wafer. is then induced while the jammed foam is in contact with the semiconductor wafer to remove the undesired contaminants and/or otherwise chemically treat the surface of the semiconductor wafer using the foam.

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