公开(公告)号：DE102004026231A1

公开(公告)日：2005-12-22

申请号：DE102004026231

申请日：2004-05-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN ,  STEIN WILHELM ,  WIRTH RALPH ,  WALTER ROBERT

IPC: H01L33/02 ,  H01L21/20 ,  H01L21/24 ,  H01L21/363 ,  H01L21/76 ,  H01L33/00 ,  H01L33/42 ,  H01S5/042 ,  H01S5/06

公开(公告)号：DE10339982A1

公开(公告)日：2005-04-07

申请号：DE10339982

申请日：2003-08-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUS UWE ,  BOEHM BERND ,  STEIN WILHELM

IPC: H01L33/00 ,  H01L33/44

Abstract: The production of radiation-emitting semiconductor chips (1) each having epitaxially produced multiple layer structures (8) comprises fixing a wafer divided along separating lines to form support elements (3) with multiple layer structures on an expanded support, increasing the distances of the chips from each other by expanding the support, and applying an anti-reflection layer (9) on a part of the side surface. An independent claim is also included for a semiconductor chip having epitaxially produced multiple layer structures.

公开(公告)号：DE10346606A1

公开(公告)日：2005-03-31

申请号：DE10346606

申请日：2003-10-07

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM

IPC: H01L33/14 ,  H01L33/22 ,  H01S5/323 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component (1) comprises a current expanding layer (9) arranged on the n-conducting side of a semiconductor body and in an electrical conducting connection with a semiconductor layer sequence (3). The current expanding layer is permeable for radiation and contains a material which is a donor with respect to the n-conducting side of the layer sequence.

公开(公告)号：DE10261364B4

公开(公告)日：2004-12-16

申请号：DE10261364

申请日：2002-12-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  JANES STEFAN ,  HEINDL ALEXANDER ,  PLOESL ANDREAS ,  WEGLEITER WALTER

IPC: H01L21/283 ,  H01L21/285 ,  H01L33/00

公开(公告)号：DE10308322A1

公开(公告)日：2004-08-19

申请号：DE10308322

申请日：2003-02-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： PLOESL ANDREAS ,  ILLEK STEFAN ,  STAUSS PETER ,  WEGLEITER WALTER ,  WIRTH RALPH ,  STEIN WILHELM ,  PIETZONKA INES ,  DIEPOLD GUDRUN

IPC: H01L33/30 ,  H01L33/40 ,  H01L33/00 ,  H01L21/283

Abstract: A process for preparation of an electrical contact region on an n-conductive AlGaInP-based layer by:application of an electrical contact material containng Au and at least one doping material, i.e. an element from the group Ge, Si, Sn, and Te, and of tempering the n-conductive AlGaInP-based layer. An independent claim is included for a structural element having an epitaxial semiconductor layer series with an electromagnetic radiation emitting active zone.

公开(公告)号：DE102004004780A1

公开(公告)日：2004-08-19

申请号：DE102004004780

申请日：2004-01-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ILLEK STEFAN ,  PLOESL ANDREAS ,  STAUSS PETER ,  DIEPOLD GUDRUN ,  PIETZONKA INES ,  STEIN WILHELM ,  WIRTH RALPH ,  WEGLEITER WALTER

IPC: H01L33/00 ,  H01L33/30 ,  H01L33/40

Abstract: Preparation of a structural element with an electrical contact region by:preparation of an epitaxially grown semiconductor series including an n-conductive AlGaIlP or AlGaInSAs-based external layer with an active zone emitting electromagnetic radiation, and application of an electrical contact material, which includes Au and doping material to the external layer, this material containing at least one of Ge, Si, Sn, and Te, and tempering of the external layer. An independent claim is included for a structural element as described above.

公开(公告)号：DE10261676A1

公开(公告)日：2004-07-22

申请号：DE10261676

申请日：2002-12-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  ALBRECHT TONY ,  WIRTH RALPH

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/00

Abstract: A light emitting diode chip comprises an epitaxial semiconductor sequence (SS) having a protective layer, an electromagnetic radiation emitting active zone and an electrical contact structure, which has a radiation permeable current increasing layer containing ZnO and an electrical junction layer, and in the transition from the junction layer to the protective layer in operation of the chip the whole or almost the whole current flows via the current increasing layer into the SS.

公开(公告)号：DE10250635A1

公开(公告)日：2004-05-19

申请号：DE10250635

申请日：2002-10-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  JACOB ULRICH ,  JANES STEFAN

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/46

Abstract: Recesses (16) in the substrate (10) extend into its rear side, opposite the semiconductor layer sequence (12). They stop just before, at or in the sequence. Each recess is at least partially-filled or coated with a material reflecting radiation produced in the active zone of the semiconductor sequence. An Independent claim is included for the manufacture of a light-emitting diode.

公开(公告)号：DE10245632A1

公开(公告)日：2004-04-15

申请号：DE10245632

申请日：2002-09-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STEIN WILHELM ,  WIRTH RALPH

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/20 ,  H01L33/00

Abstract: Between active layer (4) and light exit structures (60), a reflective layer (70) intervenes. This has a number of beam windows (71). Through these, electromagnetic radiation produced in the active layer, reaches exit layer (6). The reflective layer returns a fraction of the light reflected from the exit structures, back to structures (60), before it can return into active layer (4). An Independent claim is included for the method of manufacture.