Patent search ap:("OSRAM OPTO SEMICONDUCTORS GMBH") AND inv:"STREUBEL KLAUS" Page 4

31.

发明专利
未知

公开(公告)号：DE102005033005A1

公开(公告)日：2007-01-18

申请号：DE102005033005

申请日：2005-07-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS , WIRTH RALPH

IPC: B81B7/00 , B81C1/00 , H01L31/0232 , H01L33/00 , H01L33/14 , H01L33/20 , H01L33/46

32.

发明专利
未知

公开(公告)号：DE102004057802A1

公开(公告)日：2006-06-01

申请号：DE102004057802

申请日：2004-11-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG , WIRTH RALPH , STREUBEL KLAUS

IPC: H01S5/183 , H01L33/10 , H01L33/46 , H01S5/14

Abstract: The first mirror comprises a metal layer (4). An intermediate layer (3) is coated on the side of the metal layer facing the active zone. This layer (3) comprises a material which is opaque to light and electrically-conductive. The light-emitting semiconductor component is provided with an optical resonator for production of incoherent radiation as a resonant cavity light-emitting diode (RCLED). It alternatively operates with an external optical resonator producing coherent radiation as a vertical external cavity, surface-emitting laser (VECSEL).

33.

发明专利
Solid state vertical laser has current blocking and transmitting regions formed in layered structure 未知

公开(公告)号：DE102005036820A1

公开(公告)日：2006-03-09

申请号：DE102005036820

申请日：2005-08-04

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHMID WOLFGANG , STREUBEL KLAUS , LINDER NORBERT

IPC: H01S5/042 , H01S5/14 , H01S5/183

Abstract: The vertical laser has a substrate [2]. A Bragg mirror layer [3], an active layer [4], a first cover [5], a current guide layer [6] and a second cover [7]. This creates a current blocking region [12] and a current transmission region [13]. Electrical contacts are formed on the surface. An external resonator volume [14] overlaps with the current transmission region.

34.

发明专利
Connecting two wafers, comprises placing one on top of the other and then heating the contact region locally for a limited time 未知

公开(公告)号：DE102004012013A1

公开(公告)日：2005-09-22

申请号：DE102004012013

申请日：2004-03-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS

IPC: H01L21/58 , H01L33/62

Abstract: A process for connecting two wafers (11,12), comprises forming a contact region (15) by placing one wafer on top of the other. The contact region is then heated locally for a limited time. After heating the wafer is cooled. Heating is by laser (16).

35.

发明专利
Radiation emitting semiconducting component has radiation generating active layer between 2 distributed Bragg reflectors forming optical resonator; active layer thickness exceeds resonator wavelength 未知

公开(公告)号：DE10253908A1

公开(公告)日：2004-04-08

申请号：DE10253908

申请日：2002-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH , KARNUTSCH CHRISTIAN , STREUBEL KLAUS

IPC: H01L33/10 , H01L33/00

Abstract: The radiation emitting semiconducting component has a radiation generating active layer (1) arranged between two distributed Bragg reflectors (21,22) forming an optical resonator, whereby the thickness (D) of the active layer is greater than the wavelength (lambda) of the optical resonator. The thickness of the active layer is an integral multiple of the wavelength of the optical resonator.

36.

发明专利
Optoelektronische Projektionsvorrichtung 未知

公开(公告)号：DE102008062933A1

公开(公告)日：2010-07-01

申请号：DE102008062933

申请日：2008-12-23

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MALM NORWIN VON , STREUBEL KLAUS , RODE PATRICK , ENGL KARL , HOEPPEL LUTZ , MOOSBURGER JUERGEN

IPC: H01L27/15 , G02B21/00 , G02B26/00 , G09F9/33

Abstract: Es ist eine optoelektronische Projektionsvorrichtung vorgesehen, die im Betrieb ein vorgegebenes Bild (10) erzeugt. Die Projektionsvorrichtung umfasst einen Halbleiterkörper (1), der eine zur Erzeugung von elektromagnetischer Strahlung geeignete aktive Schicht (101) und eine Strahlungsaustrittsseite (102) aufweist. Der Halbleiterkörper (1) ist ein Bild gebendes Element der Projektionsvorrichtung. Zur elektrischen Kontaktierung des Halbleiterkörpers (1) sind eine erste Kontaktschicht (2) und eine zweite Kontaktschicht (3) an einer der Strahlungsaustrittsseite (102) gegenüberliegenden Rückseite (103) des Halbleiterkörpers (1) angeordnet und mittels einer Trennschicht (4) elektrisch voneinander isoliert.

37.

发明专利
Optoelectronic semiconductor chip for emission of electromagnetic radiation, has layer stack, which comprises primary semiconductor layer sequence with primary semiconductor area of primary conductivity type 未知

公开(公告)号：DE102008053731A1

公开(公告)日：2010-05-06

申请号：DE102008053731

申请日：2008-10-29

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： MALM NORWIN VON , STREUBEL KLAUS

IPC: H01L33/00

Abstract: The optoelectronic semiconductor chip (100) has a layer stack, which comprises a primary semiconductor layer sequence (10A) with a primary semiconductor area (11A) of a primary conductivity type, a secondary semiconductor area (12A) of a secondary conductivity type, and an active area (13A) arranged between the primary and secondary semiconductor areas for producing electromagnetic radiation. A secondary semiconductor layer sequence (10B) is provided, which has a third semiconductor area (11B) of a primary conductivity type.

38.

发明专利
未知

公开(公告)号：DE102008025923A1

公开(公告)日：2009-12-03

申请号：DE102008025923

申请日：2008-05-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： WIRTH RALPH , STREUBEL KLAUS , ENGL KARL

IPC: F21V9/08 , H01L33/44 , H01L33/50

39.

发明专利
未知

公开(公告)号：DE10306311B4

公开(公告)日：2008-08-07

申请号：DE10306311

申请日：2003-02-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： LINDER NORBERT , STREUBEL KLAUS , STAUSS PETER , HAMPEL MARK

IPC: H01L33/04 , H01L33/30

40.

发明专利
未知

公开(公告)号：DE102004031732A1

公开(公告)日：2006-01-19

申请号：DE102004031732

申请日：2004-06-30

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STREUBEL KLAUS

IPC: G02B6/12 , H01L33/60 , H01S5/026

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