公开(公告)号：WO2006015142A2

公开(公告)日：2006-02-09

申请号：PCT/US2005/026835

申请日：2005-07-28

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  CHUANG, Yung-Ho ,  ARMSTRONG, Joseph, J. ,  SHAFER, David, R.

Inventor： CHUANG, Yung-Ho ,  ARMSTRONG, Joseph, J. ,  SHAFER, David, R.

IPC: G02B1/00 ,  G02B5/20 ,  F21V9/06

CPC classification number: G03F7/70225 ,  G02B17/0808 ,  G02B17/0812 ,  G02B17/0856 ,  G02B17/0892 ,  G02B21/02 ,  G03F7/70341

Abstract: A relatively high spectral bandwidth objective employed for use in imaging a specimen and method for imaging a specimen is provided. The objective comprises a lens group having at least one focusing lens configured to receive light energy and form an intermediate image, at least one field lens oriented to receive the intermediate image and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy and apply light energy to the specimen. The objective may provide, in certain instances, a spectral bandwidth up to approximately 193 to 266 manometers and can provide numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The field lens may comprise more than one lens and may be formed of a material different from at least one other lens in the objective.

Abstract translation: 提供了用于成像样品的相对较高的光谱带宽目标和用于成像样品的方法。 该物镜包括透镜组，该透镜组具有被配置为接收光能并形成中间图像的至少一个聚焦透镜，被定向为接收中间图像并提供中间光能的至少一个场透镜，以及定位成接收中间图像 光能并将光能施加到样品上。 在某些情况下，该目标可以提供高达约193至266压力计的光谱带宽，并且可以提供超过0.9的数值孔径。 元件的直径小于100毫米，可以安装在标准显微镜内。 场镜可以包括多于一个透镜，并且可以由与物镜中的至少一个其他透镜不同的材料形成。

公开(公告)号：WO2005003746A1

公开(公告)日：2005-01-13

申请号：PCT/US2004/020483

申请日：2004-06-24

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION ,  LEWIS, Isabella ,  VAEZ-IRAVANI, Mehdi

Inventor： LEWIS, Isabella ,  VAEZ-IRAVANI, Mehdi

IPC: G01N21/95

CPC classification number: G01N21/95623 ,  G01N21/474 ,  G01N21/8806 ,  G01N21/94 ,  G01N21/9501

Abstract: A surface inspection of the system applies a first oblique illumination beam and may also apply a second illumination a surface either sequentially or simultaneously. Radiation reflected or scattered is collected by preferably three collection channels and detected by three corresponding detector arrays, although a different number of channels and detector arrays may be used. One or both illumination beams are focused to a line on the surface to be inspected and each line is imaged onto one or more detector arrays in the up to three or more detection and collection channels. Relative motion is caused between the lines and the surface inspected in a direction perpendicular to the lines, thereby increasing throughput while retaining high resolution and sensitivity. The same detection channels may be employed by detecting scattered or reflected radiation from both illumination beams. Fourier filters may be employed to filter out diffraction at one or more different spatial frequencies.

Abstract translation: 系统的表面检查应用第一倾斜照明光束并且还可以顺序地或同时地施加第二照明表面。 尽管可以使用不同数量的通道和检测器阵列，但优选地通过三个收集通道收集反射或散射的辐射，并由三个相应的检测器阵列检测。 一个或两个照明光束被聚焦到要检查的表面上的线，并且每条线在多达三个或更多个检测和收集通道中成像到一个或多个检测器阵列上。 在垂直于线路的方向上在线和表面之间产生相对运动，从而提高吞吐量，同时保持高分辨率和灵敏度。 可以通过检测来自两个照明光束的散射或反射辐射来采用相同的检测通道。 可以使用傅立叶滤波器来滤出在一个或多个不同空间频率处的衍射。

公开(公告)号：WO2004076969A1

公开(公告)日：2004-09-10

申请号：PCT/US2004/000349

申请日：2004-01-07

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： KRISHNAN, Shankar

IPC: G01B11/06

CPC classification number: G01J4/00 ,  G01B11/06 ,  G01B11/065

Abstract: A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.

Abstract translation: 在诸如绝缘体上硅（SOI）的多层基板上的薄膜上执行单波长椭偏仪（SWE）的系统应用具有小于多层膜的表层的厚度的吸收距离的测量光束， 层基板。 例如，对于SOI衬底，测量光束被选择为具有导致小于表面硅层厚度的吸收距离的波长。 该系统可以包括清洁激光器以提供同时清洁以提高测量精度，而不会不利地影响生产量。 测量光束源可以被配置成在一个波长处提供测量光束并且在较长波长处提供清洁光束，使得测量光束的吸收深度小于表面层厚度，而清洁光束的吸收深度更大 比表面层厚度。

公开(公告)号：WO2004053426A1

公开(公告)日：2004-06-24

申请号：PCT/US2003/038784

申请日：2003-12-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： MIEHER, Walter, D. ,  LEVY, Ady ,  GOLOVANEVSKY, Boris ,  FRIEDMANN, Michael ,  SMITH, Ian ,  ADEL, Michael ,  FABRIKANT, Anatoly ,  BEVIS, Christopher, F. ,  FIELDEN, John ,  BAREKET, Noah ,  GROSS, Ken ,  ZALICKI, Piotr ,  WACK, Dan ,  DECECCO, Paola ,  DZIURA, Thaddeus, G.

IPC: G01B11/00

CPC classification number: G03F9/7088 ,  G03F7/70633 ,  G03F9/7049 ,  G03F9/7084

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra S A , S B , S C , and S D from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra S A , S B , S C , and S D .

Abstract translation: 公开了用于确定样品的两层之间的重叠误差的技术，装置和目标。 在一个实施例中，公开了一种用于确定样品的第一层中的多个第一结构与样品的第二层中的多个第二结构之间的叠层的方法。 提供了各自包括第一和第二结构的一部分的目标A，B，C和D。 目标A设计成在其第一和第二结构部分之间具有偏移Xa; 目标B设计成在其第一和第二结构部分之间具有偏移Xb; 目标C被设计成在其第一和第二结构部分之间具有偏移Xc; 并且目标D被设计成在其第一和第二结构部分之间具有偏移Xd。 偏移量Xa，Xb，Xc和Xd中的每一个优选地不同于零; Xa是相反的符号，不同于Xb; Xc是相反的符号，与Xd不同。 目标A，B，C和D用电磁辐射照射，分别从目标A，B，C和D获得光谱SA，SB，SC和SD。 然后使用基于获得的光谱SA，SB，SC和SD的线性近似来确定第一结构和第二结构之间的任何覆盖误差。

公开(公告)号：WO2003104929A2

公开(公告)日：2003-12-18

申请号：PCT/US2003/017899

申请日：2003-06-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： SELIGSON, Joel, L. ,  GHINOVKER, Mark ,  IZIKSON, Pavel ,  SIMKIN, Boris ,  ROBINSON, John ,  ADEL, Michael, E. ,  TULIPMAN, David

IPC: G06F

CPC classification number: G03F7/70483 ,  G03F7/705 ,  G03F7/70516 ,  G03F7/70633

Abstract: Disclosed are methods and apparatus for analyzing the quality of overlay targets. In one embodiment, a method of extracting data from an overlay target is disclosed. Initially, image information or one or more intensity signals of the overlay target are provided. An overlay error is obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. A systematic error metric is also obtained from the overlay target by analyzing the image information or the intensity signal(s) of the overlay target. For example, the systematic error may indicate an asymmetry metric for one or more portions of the overlay target. A noise metric is further obtained from the overlay target by applying a statistical model to the image information or the intensity signal(s) of the overlay target. Noise metric characterizes noise, such as a grainy background, associated with the overlay target. In other embodiments, an overlay and/or stepper analysis procedure is then performed based on the systematic error metric and/or the noise metric, as well as the overlay data.

Abstract translation: 公开了分析覆盖目标质量的方法和装置。 在一个实施例中，公开了一种从覆盖目标提取数据的方法。 首先，提供覆盖目标的图像信息或一个或多个强度信号。 通过分析覆盖目标的图像信息或强度信号，从覆盖目标获得重叠错误。 通过分析覆盖目标的图像信息或强度信号也可以从覆盖目标获得系统误差度量。 例如，系统误差可以指示覆盖目标的一个或多个部分的不对称度量。 通过将统计模型应用于覆盖目标的图像信息或强度信号，从覆盖目标进一步获得噪声度量。 噪声度量表示与覆盖目标相关联的噪声，例如粒状背景。 在其他实施例中，然后基于系统误差度量和/或噪声度量以及覆盖数据来执行覆盖和/或步进分析程序。

公开(公告)号：WO2003073476A3

公开(公告)日：2003-09-04

申请号：PCT/US2003/006182

申请日：2003-02-26

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： WOLF, Ralph, C. ,  BENITEZ, Eva, L. ,  CHEN, Dongsheng (Don) ,  GREENE, John, D. ,  SULLIVAN, Jamie, M. ,  VELLA, Eric, N. ,  VO, Khiem, D.

IPC: G01N21/88

Abstract: Disclosed are methods and apparatus for detecting a wide dynamic range of intensity values from a beam from a sample, which is analyzed to determine the presence of defects on the sample. In one embodiment, the system directs an incident beam towards a sample and a detector positioned to detect a beam from the sample. The detector has a sensor (10) for detecting the incident beam and generating a signal and a non-linear component (182) coupled to the sensor arranged to generate a non-linear detected signal. An alternative embodiment provides a high-gain sensor (1502a) to detect the beam from the sample and a low-gain sensor (1502b) which also detects the beam and is used to sense the sample when the beam is originating in a bright region and protect the high-gain sensor by switching it off when the beam is too bright.

公开(公告)号：WO2003073476A2

公开(公告)日：2003-09-04

申请号：PCT/US2003/006182

申请日：2003-02-26

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： WOLF, Ralph, C. ,  BENITEZ, Eva, L. ,  CHEN, Dongsheng (Don) ,  GREENE, John, D. ,  SULLIVAN, Jamie, M. ,  VELLA, Eric, N. ,  VO, Khiem, D.

IPC: H01L

CPC classification number: G01N21/956 ,  G01N21/47 ,  G01N21/9501

Abstract: Disclosed are methods and apparatus for detecting a relatively wide dynamic range of intensity values from a beam (e.g., scattered light, reflected light, or secondary electrons) originating from a sample, such as a semiconductor wafer. In other words, the inspection system provides detected output signals having wide dynamic ranges. The detected output signals may then be analyzed to determine whether defects are present on the sample. For example, the intensity values from a target die are compared to the intensity values from a corresponding portion of a reference die, where a significant intensity difference may be defined as a defect. In a specific embodiment, an inspection system for detecting defects on a sample is disclosed. The system includes a beam generator for directing an incident beam towards a sample surface and a detector positioned to detect a detected beam originating from the sample surface in response to the incident beam. The detector has a sensor for detecting the detected beam and generating a detected signal based on the detected beam and a non-linear component coupled to the sensor. The non-linear component is arranged to generate a non-linear detected signal based on the detected signal. The detector further includes a first analog-to-digital converter (ADC) coupled to the non-linear component. The first ADC is arranged to digitize the non-linear detected signal into a digitized detected signal.

Abstract translation: 公开了用于检测来自诸如半导体晶片的样品的光束（例如，散射光，反射光或二次电子）的相对宽的动态范围的方法和装置。 换句话说，检查系统提供检测到的具有宽动态范围的输出信号。 然后可以分析检测到的输出信号，以确定样品中是否存在缺陷。 例如，将来自目标管芯的强度值与来自参考管芯的相应部分的强度值进行比较，其中将显着的强度差定义为缺陷。 在具体实施例中，公开了一种用于检测样品上的缺陷的检查系统。 该系统包括用于将入射光束引向样品表面的光束发生器，以及响应入射光束检测来自样品表面的检测光束的检测器。 检测器具有用于检测检测到的光束并基于检测到的光束产生检测信号的传感器和耦合到传感器的非线性分量。 非线性分量被布置成基于检测到的信号产生非线性检测信号。 检测器还包括耦合到非线性分量的第一模数转换器（ADC）。 第一ADC被布置成将非线性检测信号数字化为数字化的检测信号。

公开(公告)号：WO2003067632A3

公开(公告)日：2003-08-14

申请号：PCT/US2003/003585

申请日：2003-02-05

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： LANGE, Steven, R.

IPC: G02B27/12

Abstract: Techniques for utilizing a microscope inspection system (100) capable of inspecting specimens (112) at high throughput rates are described. The inspection system achieves the higher throughput rates by utilizing more than one detector array (116) and a large field of view to scan the surface of the semiconductor wafers. The microscope inspection system also has high magnification capabilities, a high numerical aperture, and a large field of view. By using more than one detector array, more surface area of a wafer can be inspected during each scanning swath across the semiconductor wafers. The microscope inspection system is configured to have a larger field of view so that the multiple detector arrays can be properly utilized. Additionally, special arrangements of reflective and/or refractive surfaces are used in order to fit the detector arrays within the physical constraints of the inspection system.

公开(公告)号：WO2003038456A2

公开(公告)日：2003-05-08

申请号：PCT/US2002/034215

申请日：2002-10-24

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： CHEN, Doug ,  ALEXANDER, John ,  SAMSAVAR, Amin

IPC: G01R27/08

CPC classification number: G01N22/00 ,  G01B7/06

Abstract: A highly sensitive, non-contact tank probe to measure surface conductance of thin film structures, and a method for using the same, are described. The tank probe includes inductor (L), capacitor (C) and resistor (R) circuitry that is driven by a signal generator at the probe's resonant frequency. The conductance of a film structure specimen is determined from measuring the signal that is reflected from the tank probe and it respective frequency. Various types of information can be obtained from the tank probe. For instance, information as to film thickness, doping concentration, and the presence of defects can be obtained. In one embodiment of the invention, the tank probe is formed of integrated circuits within a semiconductor substrate. Another aspect of the present invention pertains to a method of using the tank probe system to measure the conductivity of a material specimen.

Abstract translation: 描述了用于测量薄膜结构的表面电导的高灵敏度非接触式罐探针及其使用方法。 油箱探头包括电感器（L），电容器（C）和电阻器（R）电路，其由探测器谐振频率处的信号发生器驱动。 通过测量从罐探针反射的信号及其各自的频率来确定膜结构样品的电导。 罐式探头可以获得各种信息。 例如，可以获得关于膜厚度，掺杂浓度和缺陷的存在的信息。 在本发明的一个实施例中，槽探针由半导体衬底内的集成电路形成。 本发明的另一方面涉及一种使用罐探针系统来测量材料样品的导电性的方法。

公开(公告)号：WO2003036549A1

公开(公告)日：2003-05-01

申请号：PCT/US2002/034219

申请日：2002-10-24

Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION

Inventor： SATYA, Akella, V., S. ,  SONG, Li ,  LONG, Robert, Thomas ,  WEINER, Kurt, H.

IPC: G06F19/00

CPC classification number: G01R31/287 ,  G01R31/2831 ,  G01R31/2856 ,  G01R31/2858 ,  G01R31/2894

Abstract: Disclosed are methods and apparatus for determining whether to perform burn-in on a semiconductor product, such as a product wafer or product wafer lot. In general terms, test structures on the semiconductor product are inspected to extract yield information, such as defect densities. Since this yield information is related to the early or extrinsic instantaneous failure rate, one may then determine the instantaneous extrinsic failure rate for one or more failure mechanisms, such as electromigration, gate oxide breakdown, or hot carrier injection, based on this yield information. It is then determined whether to perform bum-in on the semiconductor product based on the determined instantaneous failure rate.

Abstract translation: 公开了用于确定是否对诸如产品晶片或产品晶片批次的半导体产品进行老化的方法和装置。 通常，检查半导体产品上的测试结构以提取诸如缺陷密度的产量信息。 由于该产量信息与早期或非本征瞬时故障率相关，因此可以基于该产量信息来确定一个或多个故障机制的瞬时外在故障率，例如电迁移，栅极氧化物分解或热载流子注入。 然后，基于所确定的瞬时故障率，确定是否对半导体产品进行烧伤。