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    성막 처리 방법
    43.
    发明授权
    성막 처리 방법 有权
    成膜方法

    公开(公告)号：KR100960162B1

    公开(公告)日：2010-05-26

    申请号：KR1020087015988

    申请日：2003-12-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 와카바야시사토시 ,  오카베신야 ,  무라카미세이시 ,  모리시마마사토 ,  다다구니히로

    IPC: H01L21/205

    CPC classification number: H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

    Abstract: 반도체 처리용의 성막 처리 용기(4)내에 재치대 장치가 배설된다. 재치대 장치는 피처리 기판(W)을 재치하는 상면 및 상면으로부터 하강하는 측면을 갖는 재치대(16)와, 재치대(16)내에 배설되고, 또한 그 상면을 거쳐서 기판(W)을 가열하는 히터(18)를 포함한다. 재치대(16)의 상면 및 측면을 CVD 프리코트층(28)이 피복한다. 프리코트층(28)은 히터(18)의 가열에 유래하는 재치대(16)의 상면 및 측면으로부터의 복사열량을 실질적으로 포화시키는 두께 이상의 두께를 갖는다.

    Abstract translation: 沉积装置设置在用于半导体处理的成膜处理容器（4）中。 台具有台16，其具有用于放置基板W的上表面和用于从台W的上表面下降的下表面以及设置在台16内用于加热基板W的台16 还有一个加热器（18）。 CVD预涂层28覆盖台16的上表面和侧表面。 由于加热器18的加热，预涂层28具有不小于使来自台16的顶表面和侧表面的辐射热量基本饱和的厚度。

    Ｔｉ막의 성막 방법
    44.
    发明公开
    Ｔｉ막의 성막 방법 有权
    TI-FILM形成方法

    公开(公告)号：KR1020100015932A

    公开(公告)日：2010-02-12

    申请号：KR1020097022392

    申请日：2008-04-15

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  젠코데츠

    IPC: C23C16/08 ,  C23C16/509 ,  C23C16/52 ,  H01L21/205

    CPC classification number: C23C16/14 ,  C23C16/505 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843

    Abstract: A Ti-film formation method includes: a step of placing a substrate to be treated and having an Si portion on a table; a step of heating the substrate to be treated; a step of setting a pressure in a chamber to a predetermined value; a step of introducing a treating gas containing TiClgas and a reduction gas; a step of forming a high-frequency field by high-frequency formation means so as to obtain the treating gas in a plasma state; and a step of causing a reaction by the Ticlgas and the reduction gas on the surface of the substrate to be treated. When the reaction is used to form the Ti-film on the Si portion of the substrate to be treated, the pressure in the chamber and the high-frequency power to be applied are controlled so as to suppress generation of TiSi at the Si portion of the substrate to be treated.

    Abstract translation: Ti膜形成方法包括：将待处理的基板和Si部分放置在台面上的步骤; 加热被处理基板的步骤; 将室内的压力设定为规定值的步骤; 引入含有TiCl气体和还原气体的处理气体的工序; 通过高频形成装置形成高频场的步骤，以获得处于等离子体状态的处理气体; 以及由待处理的基板的表面上的Ticlgas和还原气体引起反应的步骤。 当反应用于在被处理基板的Si部分上形成Ti膜时，控制室中的压力和施加的高频功率，以便抑制在Si部分的Ti部分的TiSi的产生 待处理的基材。

    성막 처리 장치 및 성막 처리 방법
    45.
    发明公开
    성막 처리 장치 및 성막 처리 방법 无效
    电影成型装置和成膜方法

    公开(公告)号：KR1020080109100A

    公开(公告)日：2008-12-16

    申请号：KR1020087029222

    申请日：2003-12-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 와카바야시사토시 ,  오카베신야 ,  무라카미세이시 ,  모리시마마사토 ,  다다구니히로

    IPC: H01L21/205 ,  H01L21/285 ,  H01L21/68

    CPC classification number: H01L21/67109 ,  C23C16/4581 ,  C23C16/46 ,  H01L21/28556

    Abstract: A susceptor device is provided in a film- forming vessel (4) for semiconductor processing. The susceptor device includes a susceptor (16) having a top surface on which a wafer (W) to be processed is placed and a side surface extending downward from the top surface and a heater (18) provided in the susceptor (16) and serving to heat the wafer (W) through the top surface. The top and side surfaces of the susceptor (16) is coated with a CVD pre-coat layer (28). The pre-coat layer (28) has a thickness great enough to substantially saturate the amount of heat originated from the heater (18) and radiated from the top and side surfaces of the susceptor (16). ® KIPO & WIPO 2009

    Abstract translation: 在用于半导体处理的成膜容器（4）中设置感受器装置。 所述基座装置包括：基座（16），其具有顶面，待处理的晶片（W）被放置在所述上​​表面上;从所述顶面向下延伸的侧面和设置在所述基座中的加热器， 以通过顶表面来加热晶片（W）。 基座（16）的顶表面和侧表面涂覆有CVD预涂层（28）。 预涂层（28）的厚度足够大以使来自加热器（18）的热量基本饱和并从基座（16）的顶表面和侧表面辐射。 ®KIPO＆WIPO 2009

    Ｔｉ계 막의 성막 방법 및 기억 매체
    46.
    发明公开
    Ｔｉ계 막의 성막 방법 및 기억 매체 失效
    TI系统膜和储存介质的制造方法

    公开(公告)号：KR1020080108390A

    公开(公告)日：2008-12-15

    申请号：KR1020080116392

    申请日：2008-11-21

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 나루시마겐사쿠 ,  와카바야시사토시 ,  다다구니히로

    IPC: H01L21/205 ,  H01L21/3205

    CPC classification number: C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

    Abstract: A manufacturing method of Ti system film and a storage medium are provided to suppress the formation of the NiTi layer even in case of using the shower head after restoring and cleaning the new product shower head or the chemistry by forming the passivation film. A manufacturing method of Ti system film comprises the following processes. The Ti system film is deposited on the surface of the processed article arranged on the main chuck within the chamber by discharging the process gas including the TiCl4 gas from the gas discharge member in which the surface is made of the Ni containing material in the chamber(31). The temperature of the main chuck is between 300‹C and 450‹C. The temperature of the gas discharge member is between 300‹C and 450‹C. The Ti system film is deposited on the processed article by making the TiCl4 gas flow rate to 1~12mL/min(sccm), and TiCl4 gas tension to 0.1~2.5Pa. The chamber is cleaned by introducing the cleaning gas of the fluoride group into the chamber.

    Abstract translation: 提供Ti系膜和存储介质的制造方法，即使在通过形成钝化膜恢复和清洁新产品喷头或化学品之后使用淋浴头的情况下也能抑制NiTi层的形成。 Ti系膜的制造方法包括以下工序。 通过从气体排出构件中排出包含TiCl 4气体的工艺气体，在该室内将含有Ni的材料制成的Ti体系膜沉积在设置在室内的主卡盘的被处理物的表面上 31）。 主卡盘的温度在300℃到450℃之间。 气体排出构件的温度在300℃和450℃之间。 通过使TiCl4气体流速为1〜12mL / min（sccm），TiCl4气体张力为0.1〜2.5Pa，将Ti系膜沉积在加工制品上。 通过将氟化物基团的清洁气体引入腔室来清洁腔室。

    Ｔｉ 막의 성막 방법 및 컴퓨터 판독 가능 기억 매체
    49.
    发明公开
    Ｔｉ 막의 성막 방법 및 컴퓨터 판독 가능 기억 매체 失效
    形成TI膜和计算机可读存储介质的方法

    公开(公告)号：KR1020070104254A

    公开(公告)日：2007-10-25

    申请号：KR1020070038216

    申请日：2007-04-19

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 이이타카유키 ,  와카바야시사토시 ,  나루시마겐사쿠 ,  오카베신야

    IPC: H01L21/205

    CPC classification number: C23C16/5093 ,  C23C16/14 ,  C23C16/45565 ,  C23C16/45574 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856

    Abstract: A method of depositing a Ti film and a computer readable storage medium are provided to reduce charge-up damage caused by an electron shading effect by decreasing an amount of ion reaching to a bottom of a hole. A wafer provided with a hole having a diameter of 0.13 micrometers or less and/or an aspect ratio of 10 or more is placed in a chamber(1) having a pair of parallel plate electrodes(8). While a processing gas containing TiCl4 gas, H2 gas and Ar gas is introduced into the chamber, a high-frequency power is supplied to any one of the parallel plate electrodes, and a plasma is formed between the parallel plate electrodes. A Ti film is deposited on the wafer by accelerating reaction of the processing gas using the plasma. The Ti film is deposited by reducing the amount of ions reaching a bottom of the hole when the plasma is formed by controlling a flow rate of Ar gas by up to 1600 mL/min or controlling partial pressure of Ar gas by up to 816.54Pa.

    Abstract translation: 提供沉积Ti膜和计算机可读存储介质的方法，以通过减少到达底部的离子的量来减少由电子阴影效应引起的充电损伤。 在具有一对平行平板电极（8）的室（1）中放置具有直径为0.13微米以下和/或10以上的长径比的孔的晶片。 当将含有TiCl 4气体，H 2气体和Ar气体的处理气体引入室内时，向平行板电极中的任一个供给高频电力，在平行板电极之间形成等离子体。 通过使用等离子体加速处理气体的反应，在晶片上沉积Ti膜。 通过将Ar气的流量控制高达1600mL / min，或者将Ar气体的分压控制在816.54Pa以下，通过减少到形成等离子体时的离子底部的离子量来沉积Ti膜。

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