Abstract:
본 발명의 다이싱 다이본딩 필름은 접착제층; 및 상기 접착제층에 접한 점착제층을 포함하며, 상기 점착제층은 25℃ 저장탄성율이 400~600 kPa이며, KS-A-01107 방법으로 측정한 접착제층에 대한 점착제층의 박리력이 200 내지 350 mN/25mm인 것을 특징으로 한다. 상기 다이싱 다이본딩 필름은 UV 공정이 필요 없으며, 다이싱 공정에서 공정성이 우수하다.
Abstract:
본 발명의 다이싱 다이본딩 필름은 기재필름에 접하는 제1면(A)과 반도체 웨이퍼에 접하는 제2면(B)을 가지며, 상기 제2면의 박리력은 제1면의 박리력보다 크고, 상기 제2면의 박리력은 0.2 N/25mm 이상인 것을 특징으로 한다. 상기 다이싱 다이본딩 필름은 기재필름 쪽에서는 박리가 잘 되고 웨이퍼 쪽에서는 다이싱 다이본딩 필름의 박리가 발생하지 않아 우수한 픽업 성능을 지니게 된다.
Abstract:
본 발명은 액상 실리콘 변성 아크릴레이트 수지를 포함하는 광경화형 점착 조성물에 관한 것으로, 더욱 상세하게는 아크릴계 점착바인더에 액상 실리콘 변성 아크릴레이트 수지를 포함시키고, 비닐기를 도입시킴으로써, 광경화전 기재부착력이 높고, 광경화후 현저하게 감소된 박리력을 나타내는 광경화형 점착 조성물 및 이를 이용한 점착테이프에 관한 것이다.
Abstract:
PURPOSE: A semiconductor assembling adhesive tape is provided to maintain stability of winding form in the pre-cut roll winding method and to solve defects of imprint mark generated by a multi-laminated layer of an insulating adhesive layer. CONSTITUTION: A semiconductor assembling adhesive tape comprises a base film(1), a photo-crosslinkable adhesion layer(2), an insulating adhesive layer(3), a protection film(4) and a spacer base film(5). The base film, the photo-crosslinkable adhesion layer, the insulating adhesive layer, the protection film and the spacer base film are consecutively laminated. The storage modulus of the spacer base film at 25 deg. Celsius is 100-400 MPa. The spacer base film is one or more which are selected from polyethylene, polypropylene, copolymers of propylene and ethylene, poly-1-butene, copolymer of vinyl acetate and ethylene, a mixture of polyethylene and styrene-butadiene rubber and a polyvinyl chloride film. The thickness of the spacer base film is 5-100 micro meters. A thermosetting adhesive layer is additionally included between the protection film and the spacer base film.
Abstract:
PURPOSE: An adhesive composition for semiconductor and an adhesive film including the same are provided to reduce or omit semi-cure process and to remove or minimize foamable void. CONSTITUTION: An adhesive composition for semiconductor has a compressive strength of 100-150 gf/mm^2 at 125 deg. Celsius after curing for 60 minutes and compressive strength of 500-1000 gf/mm^2 at 150 deg. Celsius after curing for 10 minutes, at 150 deg. Celsius after curing for 30 minutes, and at 175 deg. Celsius after mold 60 seconds, and the void thereof are all less than 10%. The adhesive compound comprises a thermoplastic resin, an epoxy resin, a hardener, and a curing catalyst. 30-70 weight% of the thermoplastic resin is included based on whole composition. The thermoplastic resin content amount is bigger than sum total of the epoxy resin and the hardener.
Abstract translation:目的:提供用于半导体的粘合剂组合物和包含其的粘合剂膜以减少或省略半固化过程并除去或最小化可发泡空隙。 构成:半导体用粘合剂组合物在125度下的抗压强度为100-150gf / mm ^ 2。 固化60分钟后的摄氏度,150度时的抗压强度为500-1000gf / mm ^ 2。 固化10分钟后,摄氏150度。 固化30分钟后,摄氏175度。 模具60秒后的摄氏度,其空隙均小于10%。 粘合剂包括热塑性树脂,环氧树脂,硬化剂和固化催化剂。 基于全部组成包括30-70重量%的热塑性树脂。 热塑性树脂含量大于环氧树脂和固化剂的总和。
Abstract:
PURPOSE: A composition for semiconductor adhesive film is provided to maintain low melting point and the high residual cure index after a pre-cure process, thereby effectively removing void in epoxy molding compound molding. CONSTITUTION: A composition for semiconductor adhesive film comprises 50-85 weight% of acrylic resin, 5-40 weight% of epoxy-based resin, 2-15 weight% of aromatic amine based hardener, 5-40 weight% of filler, and 0.05-5 weight% of silane coupling agent. The composition for semiconductor adhesive film has a melting point which is measured at 175 deg. Celsius after 2 cycles of curing cycle which consists of 60 minutes at 125 deg. Celsius and 10 minutes at 150 deg. Is 2.0 x 10^6 poise or less. The acrylic resin has a glass transition temperature of (-15)-50 deg. Celsius.
Abstract:
PURPOSE: An adhesive sheet for semiconductor is provided to maintain shape stability as a roll shape, and to restrain film fracture at manufacturing to roll shape. CONSTITUTION: An adhesive sheet comprises a release substrate(1), an adhesive layer(2), a tackifying layer(3), and a substrate film(4) laminated in order. The release substrate comprises a first cutting portion(7) formed from the side of the adhesive layer along the circumference of an adhesive layer, and a second cutting portion(8) formed along the circumference of the adhesive layer and the substrate film. The thickness of the first cutting portion and the second cutting portion is thinner than the whole thickness of the release substrate. The rupture strength of the release substrate is 40-90 N/15mm.
Abstract:
PURPOSE: An adhesive composition for semiconductors and an adhesive film using thereof are provided to enhance void elimination property during molding and to prevent lifting of close die during a pick-up process. CONSTITUTION: An adhesive composition for semiconductors comprises 50-90 weight% of polymer resin, 5-30 weight% of epoxy resin, and 1-30 weight% of hardener. A melting point at 175 deg. Celsius after 3 times of curing cycles at 125 deg. Celsius for 1 hour is 1.0×10^5 - 3.0×10^6 poise. The adhesive film for semiconductors comprises a base film, a tackifier layer which is laminated on the base film, an adhesive layer which is laminated on the adhesion layer and is formed with the adhesive composition, and a protective film which is laminated on the bonding layer.