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公开(公告)号：KR1020030058421A
公开(公告)日：2003-07-07
申请号：KR1020010088870
申请日：2001-12-31
Applicant: 한국과학기술연구원
IPC: H01L31/09
Abstract: PURPOSE: A method of changing wavelength response of quantum well infrared photo-detectors by using quantum well intermixing technique is provided to change the detected wavelength band of the quantum well infrared photo-detectors by using a substrate having a changed band gap of a quantum well infrared absorption layer. CONSTITUTION: A band gap of a quantum well infrared absorption layer of quantum well infrared photo-detectors is increased by using various quantum well intermixing processes. A quantum well infrared detection device is fabricated by using a substrate having the increased band gap of the quantum well infrared absorption layer. Various dielectric capping layers such as SiO2, SiNx, and SrF2 are coated on the substrate. The band gap of the quantum well infrared absorption layer is increased by performing a thermal process for the substrate.
Abstract translation: 目的：通过使用量子阱混合技术改变量子阱红外光电探测器的波长响应的方法，通过使用量子阱的带隙改变的衬底来改变量子阱红外光电检测器的检测波长带 红外吸收层。 构成：量子阱红外光电探测器的量子阱红外吸收层的带隙通过使用各种量子阱混合过程增加。 通过使用具有增加的量子阱红外线吸收层的带隙的衬底来制造量子阱红外检测装置。 各种电介质覆盖层如SiO 2，SiN x和SrF 2涂覆在基片上。 通过对衬底进行热处理来增加量子阱红外线吸收层的带隙。
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公开(公告)号：KR100373761B1
公开(公告)日：2003-02-26
申请号：KR1020000072036
申请日：2000-11-30
Applicant: 한국과학기술연구원
IPC: G02B26/00
CPC classification number: G02F2/004
Abstract: The present invention provides an ultra-high speed optical wavelength converter apparatus for enabling extraction of all optical lock signals which implements an ultra-high speed wavelength converter without an external pump light by constructing a semiconductor-fiber ring laser (SFRL) in which a semiconductor optical amplifier (SOA) is used as a laser gain medium and simultaneously implements a clock pulse generator for generating an optical pulse string which is injection mode-locked by an input signal light, and then is phase-locked with an input signal string. According to the present invention, there is proposed an ultra-high speed optical wavelength converter apparatus for enabling extraction of all optical lock signals in which when an output is obtained at a suitable position within a laser resonator after constituting a semiconductor optical laser, a phase lock signal is generated by an injection mode locking laser and a wavelength converter apparatus eliminating the necessity of an external pump light is implemented at another position thereof.
Abstract translation: 本发明提供一种超高速光学波长转换器装置，通过构造半导体 - 光纤环形激光器（SFRL），其能够在没有外部泵浦光的情况下提取实现超高速波长转换器的所有光学锁定信号，其中半导体 - 光纤环形激光器 光放大器（SOA）被用作激光增益介质，并且同时实现时钟脉冲发生器，用于产生由输入信号光注入锁模的光脉冲串，然后与输入信号串锁相。 根据本发明，提出了一种超高速光学波长转换装置，能够提取在构成半导体光学激光之后的激光谐振器内的适当位置获得输出时的全部光锁定信号， 锁定信号由注入模式锁定激光器产生，并且消除了外部泵浦光的必要性的波长转换器设备在其另一位置处被执行。
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公开(公告)号：KR100361035B1
公开(公告)日：2002-11-18
申请号：KR1020000005631
申请日：2000-02-07
Applicant: 한국과학기술연구원
IPC: H01L31/14
Abstract: 본 발명은 스스로 뭉쳐서 형성된 양자점에서 나오는 광의 스펙트럼이 매우 넓은 것을 이용하여 반도체 광 증폭기의 이득 대역폭을 확장하는 방법에 관한 것이다.
더 상세하게는 InGaAs/InGaAsP/InP 양자우물 반도체 광증폭기의 이득 대역폭 확장방법에 있어서, 소정 두께의 InP 버퍼층을 성장시키는 과정과, 상기 InP 버퍼층 성장후 소정 가스를 공급하는 제1 가스 공급 과정과, 상기 InP 버퍼층 위로 InAs 단일 우물 구조층을 성장시키는 과정과, 상기 InAs 층 성장 후 소정 가스를 공급하여 격자 상수가 맞지 않는 상기 InAs 층이 서로 뭉쳐서 양자점을 형성하도록 하는 제2 가스 공급 과정과, 상기 InAs 층 위로 소정 두께의 InP 캡층을 성장시키는 과정으로 양자점을 생성하여 반도체 광 증폭기의 이득영역으로 양자점을 도입하고, 상기 InAs가 서로 뭉치면서 각 점들의 크기와 높이가 불균일하게 서로 독립적인 점을 형성하게 함을 특징으로 한다.-
44.发明公开
公开(公告)号：KR1020010036949A
公开(公告)日：2001-05-07
申请号：KR1019990044158
申请日：1999-10-12
Applicant: 한국과학기술연구원
IPC: H01L21/18
Abstract: PURPOSE: A method for locally forming a different band gap in a quantum well by a dielectric-semiconductor composite cover layer is provided to regulate a degree of disorder of the quantum well. CONSTITUTION: The method begins with growing an InGaAs/InGaAsP quantum well substrate by a chemical beam epitaxy technique. Next, a dielectric thin layer made of such as SiO2 or SiNx is formed as a cover layer on the quantum well substrate by a plasma-enhanced chemical deposition technique. After a heat treatment step is carried out at a temperature of 600 - 800°C for 4 - 16 minutes, the dielectric thin layer is removed. In addition, InP, InGaAs or InGaAsP is used as a semiconductor cover layer.
Abstract translation: 目的：提供通过介电半导体复合覆盖层在量子阱中局部形成不同带隙的方法，以调节量子阱的无序程度。 构成：该方法开始于通过化学束外延技术生长InGaAs / InGaAsP量子阱衬底。 接下来，通过等离子体增强化学沉积技术在量子阱基板上形成由SiO 2或SiN x构成的电介质薄层作为覆盖层。 在600-800℃的温度下进行4-16分钟的热处理步骤后，去除电介质薄层。 此外，使用InP，InGaAs或InGaAsP作为半导体覆盖层。
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公开(公告)号：KR100132539B1
公开(公告)日：1998-04-16
申请号：KR1019940012262
申请日：1994-06-01
Applicant: 한국과학기술연구원
IPC: H01L21/027
Abstract: Computer central processing unit scans electron beam by scanning circuit by running analog/digital convertor and detects generating signal with detector(S10). Detected signal converted through analog/digital convertor after passing through an image signal amplifier and is stored at data storing device by computer central processing unit. Stored signal outputs to computer monitor and outputs to electron microscope monitor(S11) through an image signal amplifier from a detector(S10). Therefore, electron beam lithography device carries mask pattern alignment from an output alignment mark image and by using electron beam blocker(S4) blocks electron beam and controls electron microscope magnification so all electron beam lithography area are positioned within range of scanning.
Abstract translation: 计算机中央处理单元通过运行模拟/数字转换器扫描电路扫描电子束，并用检测器检测生成信号（S10）。 检测信号通过模拟/数字转换器通过图像信号放大器后转换，并由计算机中央处理单元存储在数据存储装置中。 存储的信号输出到计算机监视器并通过来自检测器的图像信号放大器输出到电子显微镜监视器（S11）（S10）。 因此，电子束光刻设备从输出对准标记图像和使用电子束阻挡器（S4）携带掩模图案对准，阻止电子束并控制电子显微镜放大率，使得所有电子束光刻区域位于扫描范围内。
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Patent Agency Ranking
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公开(公告)号：KR1020180020375A
公开(公告)日：2018-02-28
申请号：KR1020160104594
申请日：2016-08-18
Applicant: 한국과학기술연구원
CPC classification number: H01L31/0547 , G02B6/00 , H01L31/0468 , H01L31/054 , H02S20/22 , H02S20/26 , H02S40/20 , Y02B10/10 , Y02E10/52 , E05Y2900/148 , E06B5/00 , E06B7/28 , G02B5/0236 , G02B19/0042 , H01L31/0504 , H02S40/22 , Y02E10/50
Abstract: 태양전지패널및 이를구비한창호가개시된다. 본발명의일 실시예에따른태양전지패널은빛이입사되고산란되는광확산층; 광확산층의하부에적층되게마련되되, 광확산층을투과한빛이반사되어측부로집광되도록광확산층에대향되는면의반대면에광확산층방향으로볼록한공동(cavity) 형상의복수의패턴이상호이격되게형성된집광층; 및집광층의측면에마련되되, 집광층의측면을따라배치되고전기적으로연결된복수의태양전지셀을구비한태양전지셀 어레이를포함한다.
Abstract translation: 公开了一种太阳能电池板和具有该太阳能电池板的太阳能电池板。 根据本发明的实施例的其中银光入射和散射的光扩散层; Doedoe设置在光扩散层的底部被堆叠为光扩散层传输哈恩被反射到表面相对的光扩散层形的，使得会聚到侧面的光生的相反侧中的多个光扩散层方向上的凸腔（空腔）的图案 - 何形成开 光收集层; 以及设置在聚光层的侧表面上的太阳能电池阵列，太阳能电池阵列具有沿着聚光层的侧表面布置的多个电连接的太阳能电池。
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公开(公告)号：KR101787012B1
公开(公告)日：2017-10-18
申请号：KR1020170079819
申请日：2017-06-23
Applicant: 한국과학기술연구원
IPC: G02F1/137 , H02S10/00 , H01L31/042
CPC classification number: Y02E10/50
Abstract: 광반응스마트윈도우가제공된다. 상기광반응스마트윈도우는자외선우무에따라투과도가조절되는액정층을태양전지와결합하여새로운형태의전기생산스마트윈도우로서, 자외선이있는낮에는투명해져서창문에노출되는태양광을전기에너지로변환할수 있고, 자외선이없는저녁에는불투명해져서커튼없는창문으로사용될수 있다.
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公开(公告)号：KR101755268B1
公开(公告)日：2017-07-10
申请号：KR1020150157224
申请日：2015-11-10
Applicant: 한국과학기술연구원
Abstract: 실시예들은기판상에형성된에피층을포함하는레이저다이오드칩을준비하는단계, 솔더층이증착된금속블록을준비하는단계, 상기에피층과상기솔더층이서로향하도록정렬하는단계, 상기금속블록을가열하는단계및 상기가열에의해솔더층이액체상태가되면, 상기레이저다이오드칩과상기금속블록이접촉하도록상기레이저다이오드칩과상기금속블록을누르는단계를포함하는레이저다이오드제조방법및 이를이용하여제조된레이저다이오드에관한것이다.
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公开(公告)号：KR101682133B1
公开(公告)日：2016-12-02
申请号：KR1020150156331
申请日：2015-11-09
Applicant: 한국과학기술연구원
IPC: H01L31/0352 , H01L31/0216 , H01L31/0236 , H01L31/04 , H01L31/18
CPC classification number: H01L31/055 , H01L31/02168 , H01L31/0547 , Y02E10/50 , Y02E10/52
Abstract: 본발명의광학필름은원뿔형구조의돌기들이구비된패턴과상기돌기내에양자점이임베디드된구조에의해빛의반사를방지하고, 근자외선파장영영에서의빛을태양전지가흡수할수 있는범위의파장으로변환하여, 소자의효율을현저히개선할수 있는효과를갖는다. 또한본 발명에따른광학필름은투명성이우수하고, 이자체가접착특성을갖기때문에, 추가제조공정없이태양전지등의소자에쉽게부착하는데사용될수 있다. 또한본 발명에따른광학필름은태양전지에적용되어태양전지의두께를크게증가시키지않으면서도태양광의흡수효율은현저히향상시키는효과를갖는다.
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