公开(公告)号：DE69943235D1

公开(公告)日：2011-04-14

申请号：DE69943235

申请日：1999-01-29

Applicant: IBM ,  PERRAUD LAURENT CLAUDE

Inventor： GRILL ALFRED ,  JAHNES CHRISTOPHER VINCENT ,  PATEL VISHNUBHAI VITTHALBHAI ,  PERRAUD LAURENT CLAUDE

IPC: H01L23/48 ,  C23C16/32 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532

公开(公告)号：SG137695A1

公开(公告)日：2007-12-28

申请号：SG2005049127

申请日：2001-10-25

Applicant: IBM

Inventor： GRILL ALFRED ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/31

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.

公开(公告)号：MY123962A

公开(公告)日：2006-06-30

申请号：MYPI9802015

申请日：1998-05-06

Applicant: IBM

Inventor： BABICH KATHERINE E ,  CALLEGARI ALESSANDRO CESARE ,  FONTAINE JULIEN ,  GRILL ALFRED ,  JAHNES CHRISTOPHER ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: B32B9/00 ,  H01L21/3205 ,  C23C16/26 ,  C23C16/30 ,  G03F7/09 ,  H01L21/027 ,  H01L21/311 ,  H01L21/312

Abstract: DISCLOSED IS VAPOR DEPOSITED BARC AND METHOD OF PREPARING TUNABLE AND REMOVABLE ANTIREFLECTIVE COATINGS BASED ON AMORPHOUS CARBON FILMS.THESE FILMS CAN BE HYDROGENATED, FLUORINATED, NITROGENATED CARBON FILMS. SUCH FILMS HAVE AN INDEX OF REFRACTION AND AN EXTINCTION COEFFICIENT TUNABLE FROM ABOUT 1.4 TO ABOUT 2.1 AND FROM ABOUT 0.1 TO ABOUT 0.6, RESPECTIVELY, AT UV AND DUV WAVELENGTHS, IN PARTICULAR 365, 248 AND 193 NM. MOREOVER, THE FILMS PRODUCED BY THE PRESENT INVENTION CAN BE DEPOSITED OVER DEVICE TOPOGRAPHY WITH HIGH CONFORMALITY, AND THEY ARE ETCHABLE BY OXYGEN AND/OR A FLUORIDE ION ETCH PROCESS. BECAUSE OF THEIR UNIQUE PROPERTIES, THESE FILMS CAN BE USED TO FORM A TUNABLE AND REMOVABLE ANTIREFLECTIVE COATING AT UV AND DUV WAVELENGTHS TO PRODUCE NEAR ZERO REFLECTANCE AT THE RESIST/BARC COATING INTERFACE. THIS BARC GREATLY IMPROVES PERFORMANCE OF SEMICONDUCTOR CHIPS.(FIG. 2B)

公开(公告)号：DE19515347C2

公开(公告)日：1997-04-17

申请号：DE19515347

申请日：1995-04-26

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  GRILL ALFRED ,  KANE WILLIAM FRANCIS ,  MIKALSEN DONALD JOSEPH

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01G4/008 ,  H01G4/12

公开(公告)号：CA2055801C

公开(公告)日：1996-01-23

申请号：CA2055801

申请日：1991-11-19

Applicant: IBM

Inventor： GRILL ALFRED ,  HORNG CHENG TZONG ,  MEYERSON BERNARD STEELE ,  PATEL VISHNUBHAI VITTHALBHAI ,  RUSSAK MICHAEL ALLEN

IPC: G11B5/29 ,  G11B5/31 ,  G11B5/60 ,  G11B5/255

Abstract: A magnetic head slider having a protective coating on the rails thereof, the protective coating comprising a thin adhesion layer and a thin layer of amorphous hydrogenated carbon. The protective coating is deposited on the air bearing surface of the slider after the thin film magnetic heads are lapped to a chosen dimension, but before the pattern of rails is produced on the air bearing surface. The protective coating protects the magnetic head during the rail fabrication process and in usage in a magnetic recording system protects the magnetic head from wear and corrosion damage.

公开(公告)号：DE19515347A1

公开(公告)日：1995-11-02

申请号：DE19515347

申请日：1995-04-26

Applicant: IBM

Inventor： CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH ,  GRILL ALFRED ,  KANE WILLIAM FRANCIS ,  MIKALSEN DONALD JOSEPH

IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01G4/008 ,  H01G4/12

Abstract: The electrode structure (10) includes a substrate (26) with a free surface semiconductor layer (27), metal (31) and metal oxide (32) layers. The metal layer is formed from a chosen one of the group Ru, Ir, Re, Rh, Os, Pd. The metal oxide layer is chosen from the same metallic group as the initial metal. A further metallic layer (33) over the oxide layer is formed of metal from the same group. The semiconductor layer is of Silicon or Germanium. Included above the metal and metal oxide layers is a further layer having a high dielectric constant (16). The dielectric material is an oxide of ferroelectric or para-electric material such as BaxSr(1-x)TiO3 or PbZr3Ti(1-x)O3 and a fifth layer of conducting material.

公开(公告)号：DE112012001742T5

公开(公告)日：2014-01-16

申请号：DE112012001742

申请日：2012-03-05

Applicant: IBM

Inventor： GRILL ALFRED ,  COHEN GUY ,  DIMITRAKOPOULOS CHRISTOS D

IPC: H01L29/15

Abstract: Halbleiterstrukturen, die parallele Graphennanobänder oder Kohlenstoff-Nanoröhren aufweisen, die entlang kristallographischer Richtungen ausgerichtet sind, werden aus einer Vorlage aus Siliciumcarbid(SiC)-Finnen oder -Nanodrähten bereitgestellt. Die SiC-Finnen oder -Nanodrähte werden zuerst bereitgestellt, und anschließend werden durch Tempern Graphennanobänder oder Kohlenstoff-Nanoröhren auf den freigelegten Flächen der Finnen oder der Nanodrähte ausgebildet. Bei Ausführungsformen, bei denen geschlossene Kohlenstoff-Nanoröhren ausgebildet werden, werden die Nanodrähte vor dem Tempern frei hängen gelassen. Der Ort, die Ausrichtung und die Chiralität der Graphennanobänder und der Kohlenstoff-Nanoröhren, die bereitgestellt werden, werden durch die entsprechenden Siliciumcarbidfinnen und -Nanodrähte bestimmt, aus denen sie ausgebildet werden.

公开(公告)号：CA2843406A1

公开(公告)日：2012-10-26

申请号：CA2843406

申请日：2012-03-05

Applicant: IBM

Inventor： COHEN GUY ,  DIMITRAKOPOULOS CHRISTOS D ,  GRILL ALFRED

IPC: H01L29/15

Abstract: Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

公开(公告)号：DE602005001401T2

公开(公告)日：2008-02-21

申请号：DE602005001401

申请日：2005-02-22

Applicant: IBM

Inventor： CHU JACK O ,  DEHLINGER GABRIEL K ,  GRILL ALFRED ,  KOESTER STEVEN J ,  OUYANG QIGING ,  SCHAUB JEREMY D

IPC: H01L31/101

Abstract: The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type contacts, and low-resistance surface electrodes. The device achieves high bandwidth by utilizing a buried insulating layer to isolate carriers generated in the underlying substrate, high quantum efficiency over a broad spectrum by utilizing a Ge absorbing layer, low voltage operation by utilizing thin a absorbing layer and narrow electrode spacings, and compatibility with CMOS devices by virtue of its planar structure and use of a group IV absorbing material. The method for fabricating the photodetector uses direct growth of Ge on thin SOI or an epitaxial oxide, and subsequent thermal annealing to achieve a high-quality absorbing layer. This method limits the amount of Si available for interdiffusion, thereby allowing the Ge layer to be annealed without causing substantial dilution of the Ge layer by the underlying Si.

公开(公告)号：SG137694A1

公开(公告)日：2007-12-28

申请号：SG2005049093

申请日：2001-10-25

Applicant: IBM

Inventor： GRILL ALFRED ,  MEDEIROS DAVID R ,  PATEL VISHNUBHAI VITTHALBHAI

IPC: H01L21/768 ,  C23C16/40 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522 ,  H01L23/532 ,  H01L21/311

Abstract: A method for fabricating a thermally stable ultralow dielectric constant film comprising Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. To enable the fabrication of thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, cyclic siloxanes and organic molecules containing ring structures, for instance, tetramethylcycloterasiloxane and cyclopentene oxide. To stabilize plasma in the PECVD reactor and thereby improve uniformity of the deposited film, CO2 is added to TMCTS as a carrier gas, or CO2 or a mixture of CO2 and O2 are added to the PECVD reactor.