公开(公告)号：DE3071248D1

公开(公告)日：1986-01-02

申请号：DE3071248

申请日：1980-08-12

Applicant: IBM

Inventor： HO PAUL SIU-CHUNG ,  KOSTER UWE ,  KUAN TUNG-SHENG ,  OHDOMARI IWAO ,  REISMAN ARNOLD

IPC: H01L29/43 ,  H01L21/28 ,  H01L21/285 ,  H01L29/45 ,  H01L29/47 ,  H01L29/872 ,  H01L29/40

Abstract: An electrical contact to a Si substrate (19) is formed by co-depositing Al and Pt or Pd (14) directly on a region of the substrate, and heating to produce a compound of the co-deposit and Si (Al3Pt4Si or Al3P4Si) in said region, an Al conductor layer (12) being applied before or after said heating. The contact is ohmic or Schottky depending on the dopant concentration in said region.

公开(公告)号：DE3167300D1

公开(公告)日：1985-01-03

申请号：DE3167300

申请日：1981-07-06

Applicant: IBM

Inventor： REISMAN ARNOLD ,  SILVESTRI VICTOR JOSEPH ,  TANG DENNY DUAN-LEE ,  WIEDMANN SIEGFRIED KURT ,  YU HWA NIEN

IPC: H01L29/73 ,  H01L21/20 ,  H01L21/331 ,  H01L21/74 ,  H01L21/762 ,  H01L21/8226 ,  H01L27/082 ,  H01L29/423 ,  H01L29/06 ,  H01L21/76 ,  H01L27/08

公开(公告)号：CA1124409A

公开(公告)日：1982-05-25

申请号：CA343327

申请日：1980-01-09

Applicant: IBM

Inventor： RAY ASIT K ,  REISMAN ARNOLD

IPC: H01L21/31 ,  C23C8/36 ,  H01L21/316 ,  B05D3/06

Abstract: SEMICONDUCTOR PLASMA OXIDATION Uniform growth of oxide at low temperature can be performed in a plasma environment by positioning the substrates on which the oxide is to grow outside of the plasma area and independently supplying heat to the substrates in the presence of controlled oxygen pressure. YO979-007

公开(公告)号：DE2961167D1

公开(公告)日：1982-01-07

申请号：DE2961167

申请日：1979-09-12

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  REISMAN ARNOLD

IPC: C09K13/06 ,  C23F1/00 ,  C30B33/00 ,  C30B33/10 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3213 ,  C09K13/00

Abstract: There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol. There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.

公开(公告)号：DE2961095D1

公开(公告)日：1982-01-07

申请号：DE2961095

申请日：1979-03-16

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  GREEN DENNIS CLINTON ,  KAUFMAN FRANK BENJAMIN ,  REISMAN ARNOLD

IPC: C23F1/10 ,  H01L21/306 ,  H01L21/308 ,  C09K13/00

公开(公告)号：CA1088991A

公开(公告)日：1980-11-04

申请号：CA290763

申请日：1977-11-14

Applicant: IBM

Inventor： PARK KYU C ,  REISMAN ARNOLD

IPC: H01J31/24 ,  G02B27/50 ,  H01J9/233 ,  H01J29/39 ,  H01J31/58

Abstract: IMPROVED DSDT TARGET AND METHOD FOR FABRICATING THE SAME A process for the fabrication of a deformographic storage display tube (DSDT) target in which a wafer of silicon or other etchable material is used (1) as a temporary support during the generation of the active region of the target and (2) as a supporting structure for the completed target. The DSDT target structure comprises a reflection layer on a dielectric layer supported in turn on a silicon or other etchable material wafer, the wafer being etched off at its back side to expose the dielectric layer while providing an outer frame support structure made of the wafer around the edge, with the dielectric layer being etched to form pillars of the dielectric on the backside of the reflection layer, whereby the dielectric pillars enable a deformation action to occur in the region between the pillars. An inner frame support structure comprised of a similarly etched wafer, a dielectric layer and a secondary electron emission layer is fitted against the bottoms of the pillars and bonded to the outer frame support structure, thereby forming the completed target.

公开(公告)号：DE2643596A1

公开(公告)日：1977-04-14

申请号：DE2643596

申请日：1976-09-28

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  CHAN SEE ARK ,  LANDERMANN JOAN ,  REISMAN ARNOLD ,  TAKAMORI TAKESHI

IPC: C03C8/24 ,  C03C27/00

公开(公告)号：FR2298436A1

公开(公告)日：1976-08-20

申请号：FR7539614

申请日：1975-12-17

Applicant: IBM

Inventor： BASSOUS ERNEST ,  KUHN LAWRENCE ,  REISMAN ARNOLD ,  TAUB HOWARD H

IPC: B41J2/025 ,  B41J2/16 ,  G06K15/10 ,  H04N1/034 ,  B41J3/04

Abstract: In an ink jet printing system, a single nozzle or an array of nozzles are etched in a semiconductor material such as silicon. Each nozzle has polygonal or N-sided entrance and exit apertures of different cross-sectional area. Preferably, the nozzle is in the shape of a truncated pyramid with the entrance and exit apertures being substantially square in cross-section. The corners of the apertures and wall interfaces may be rounded to reduce stress concentrations.

公开(公告)号：DE2259682A1

公开(公告)日：1973-07-05

申请号：DE2259682

申请日：1972-12-06

Applicant: IBM

Inventor： BERKENBLIT MELVIN ,  COLE JAMES NORMAN ,  HERRELL DENNIS JAMES ,  LIGHT THOMAS BURWELL ,  PARK KYU CHANG ,  REISMAN ARNOLD

IPC: G11C11/41 ,  G11C11/39 ,  G11C13/00 ,  H01C7/00 ,  H01C7/108 ,  H01L29/86 ,  H01L45/00 ,  H01L

公开(公告)号：DE1521804A1

公开(公告)日：1969-10-16

申请号：DE1521804

申请日：1966-11-16

Applicant: IBM

Inventor： REISMAN ARNOLD ,  RAINER LEONHARDT HORST

IPC: C23F3/04 ,  H01L21/306 ,  H01L7/00

Abstract: 1,143,255. Vapour polishing of IIIB-VB compounds. INTERNATIONAL BUSINESS MACHINES CORP. 2 Nov., 1966 [17 Nov., 1965], No. 49045/66. Heading C1A. The surface of a substrate of a III B -V B compound is polished by exposing it at elevated temperatures to a flowing gas stream containing a hydrogen halide and the Group V B element at a partial pressure sufficient to prevent dissociation of the compound. The substrate is then suitable for epitaxial deposition without removal from the site. The compound may be an arsenide, antimonide, or phosphide of Ga or In. Preferably GaAs is exposed to an atmosphere of H 2 +HI+As at a p.p. of 15-300 Torr, at a temperature from 1000‹ C. to the m.pt. of GaAs, e.g. 1100-1200‹ C. HI may be supplied from a tank, or generated by passing H 2 over heated I 2 and through a heated Pt bed. The mixture of HI and H 2 is then passed over a heated source of solid As. Alternatively, a decomposable compound of the Group V B element may be used, e.g. AsH 3 , SbH 3 , or PH 3 . The substrate may previously have been mechanically or chemically polished. Its surface may be oriented in the (111), (211), (100) or (110) plane.