42.
    发明专利
    未知

    公开(公告)号:DE69718321D1

    公开(公告)日:2003-02-13

    申请号:DE69718321

    申请日:1997-06-02

    Applicant: LAM RES CORP

    Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

    INTEGRATED STEERABILITY ARRAY ARRANGEMENT FOR MINIMIZING NON-UNIFORMITY

    公开(公告)号:SG182968A1

    公开(公告)日:2012-08-30

    申请号:SG2012047999

    申请日:2008-06-25

    Applicant: LAM RES CORP

    Inventor: BENJAMIN NEIL

    Abstract: AbstractINTEGRATED STEERABILITY ARRAY ARRANGEMENT FOR MINIMIZING NON-UNIFORMITYAn integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.Fig. 4

    ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON-UNIFORMITY IN PLASMA

    公开(公告)号:SG182966A1

    公开(公告)日:2012-08-30

    申请号:SG2012047965

    申请日:2008-06-25

    Applicant: LAM RES CORP

    Inventor: BENJAMIN NEIL

    Abstract: ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON UNIFORMITY IN PLASMAAbstractAn arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber.Fig. 9

    50.
    发明专利
    未知

    公开(公告)号:DE60235466D1

    公开(公告)日:2010-04-08

    申请号:DE60235466

    申请日:2002-06-10

    Applicant: LAM RES CORP

    Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

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