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公开(公告)号:AU2002356543A1
公开(公告)日:2003-04-28
申请号:AU2002356543
申请日:2002-10-09
Applicant: LAM RES CORP
Inventor: VAHEDI VAHID , BENJAMIN NEIL , SINGH HARMEET , COOPERBERG DAVID J , RATTO DOUGLAS
IPC: H05H1/46 , C23C16/44 , C23C16/455 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/205 , H01L21/3065 , C23C16/50
Abstract: A tunable multi-zone injection system for a plasma processing system for plasma processing of substrates such as semiconductor wafers. The injector can include an on-axis outlet supplying process gas at a first flow rate to a central zone and off-axis outlets supplying the same process gas at a second flow rate to an annular zone surrounding the central zone. The arrangement permits modification of gas delivery to meet the needs of a particular processing regime by allowing independent adjustment of the gas flow to multiple zones in the chamber. In addition, compared to consumable showerhead arrangements, a removably mounted gas injector can be replaced more easily and economically.
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公开(公告)号:DE69718321D1
公开(公告)日:2003-02-13
申请号:DE69718321
申请日:1997-06-02
Applicant: LAM RES CORP
Inventor: WICKER E , COOK M , MARASCHIN A , KENNEDY S , BENJAMIN NEIL
IPC: C23C16/44 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302
Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.
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公开(公告)号:DE69523940T2
公开(公告)日:2002-04-04
申请号:DE69523940
申请日:1995-12-05
Applicant: LAM RES CORP
Inventor: BARNES MICHAEL , BENJAMIN NEIL , HOLLAND JOHN , BEER RICHARD , VELTROP ROBERT
IPC: H05H1/46 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065
Abstract: A plasma processor for large workpieces includes a vacuum chamber having plural individually supported dielectric windows for coupling an r.f. field originating outside of the chamber into the chamber to excite the plasma. A planar coil for inductively deriving the field has plural segments with the same electrical length, each including an element connected in parallel with an element of another segment.
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公开(公告)号:AU3079597A
公开(公告)日:1998-01-05
申请号:AU3079597
申请日:1997-06-02
Applicant: LAM RES CORP
Inventor: WICKER THOMAS E , COOK JOEL M , MARASCHIN ROBERT A , KENNEDY WILLIAM S , BENJAMIN NEIL
IPC: C23C16/44 , C23C16/455 , C23C16/50 , C23C16/505 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302
Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.
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公开(公告)号:AU6405496A
公开(公告)日:1997-01-30
申请号:AU6405496
申请日:1996-06-28
Applicant: LAM RES CORP
Inventor: BENJAMIN NEIL , MANGANO STEFANO , JEWETT RUSSELL
IPC: H05H1/46 , C03C15/00 , C03C17/245 , C23C16/50 , C23C16/507 , H01J37/32 , C23C16/00 , C23F1/02
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公开(公告)号:SG10201510613QA
公开(公告)日:2016-01-28
申请号:SG10201510613Q
申请日:2008-06-25
Applicant: LAM RES CORP
Inventor: BENJAMIN NEIL
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公开(公告)号:SG182968A1
公开(公告)日:2012-08-30
申请号:SG2012047999
申请日:2008-06-25
Applicant: LAM RES CORP
Inventor: BENJAMIN NEIL
Abstract: AbstractINTEGRATED STEERABILITY ARRAY ARRANGEMENT FOR MINIMIZING NON-UNIFORMITYAn integrated steerability array arrangement for managing plasma uniformity within a plasma processing environment to facilitate processing of a substrate is provided. The arrangement includes an array of electrical elements. The arrangement also includes an array of gas injectors, wherein the array of electrical elements and the array of gas injectors are arranged to create a plurality of plasma regions, each plasma region of the plurality of plasma regions being substantially similar. The arrangement further includes an array of pumps, wherein individual one of the array of pumps being interspersed among the array of electrical elements and the array of gas injectors. The array of pumps is configured to facilitate local removal of gas exhaust to maintain a uniform plasma region within the plasma processing environment.Fig. 4
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公开(公告)号:SG182966A1
公开(公告)日:2012-08-30
申请号:SG2012047965
申请日:2008-06-25
Applicant: LAM RES CORP
Inventor: BENJAMIN NEIL
Abstract: ARRAYS OF INDUCTIVE ELEMENTS FOR MINIMIZING RADIAL NON UNIFORMITY IN PLASMAAbstractAn arrangement for enabling local control of power delivery within a plasma processing system having a plasma processing chamber during processing of a substrate is provided. The arrangement includes a dielectric window and an inductive arrangement. The inductive arrangement is disposed above the dielectric window to enable power to couple with a plasma in the plasma processing system. The inductive arrangement includes a set of inductive elements, which provides the local control of power delivery to create a substantially uniform plasma in the plasma processing chamber.Fig. 9
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公开(公告)号:IL173540A
公开(公告)日:2010-04-15
申请号:IL17354006
申请日:2006-02-05
Applicant: LAM RES CORP , PERRY ANDREW , STEGER ROBERT , BENJAMIN NEIL
Inventor: PERRY ANDREW , STEGER ROBERT , BENJAMIN NEIL
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公开(公告)号:DE60235466D1
公开(公告)日:2010-04-08
申请号:DE60235466
申请日:2002-06-10
Applicant: LAM RES CORP
Inventor: NAKAJIMA SHU , BENJAMIN NEIL
IPC: H01L21/3065 , H01L21/68 , H01L21/683 , H02N13/00
Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.
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