Abstract:
본 발명은 반도체용 접착제 조성물 및 이를 이용하여 제조된 복층구조 접착 필름에 관한 것으로, 전이금속 및 전이금속 이온의 이동으로 인해 야기되는 반도체 칩의 신뢰성 저하를 해결하기 위하여, 전이금속 이온과 결합을 통하여 또는 전이금속 이온을 산화 또는 환원시키고, 전이금속의 이동도를 현저히 감소시킬 수 있는 기능기를 포함하는 접착제 조성물을 사용하되, 후속의 와이어 본딩 공정을 고려하여 유동성을 확보할 수 있는 접착필름을 더 형성함으로써, 반도체 작동의 안정성을 높일 수 있고, 접착 필름의 치수 안정성을 확보함과 동시에 인장강도를 증가시켜 반도체 칩 접합 공정의 신뢰도를 높일 수 있도록 하는 발명에 관한 것이다. 접착필름, 반도체용 접착제, 조성물, 다이싱, 전이금속
Abstract:
PURPOSE: A dicing die bonding film for a semiconductor wafer is provided to suppress the generation of fibrous burrs in the dicing process of a semiconductor wafer and to ensure excellent pick-up property of a chip, expandability and uniformity in an expanding process. CONSTITUTION: A dicing die bonding film for a semiconductor wafer comprises a base film and a monolayered or multilayered adhesive layer formed on one side thereof. The base film comprises an ethylene-α-olefin block copolymer in which a melting point is 80°C or greater and ethylene content is 60 mole% or greater. The ethylene-α-olefin block copolymer is included in the amount of 50-100 weight%. The base film further includes a hydrophilic functional group-containing polyethylene copolymer.
Abstract:
본 발명은 고온 속경화형 접착필름 조성물에 관한 것으로, 보다 상세하게는 에폭시 당량이 최대 200g/eq인 에폭시 수지를 사용하며, 에폭시 수지:페놀형 에폭시 수지 경화제의 에폭시 당량비율을 0.5:1~1.5:1로 하여 전체 조성물에 적어도 25 중량%로 포함함으로써 웨이퍼 레벨 스택 패키지(wafer level stack package, WSP)의 250℃ 이상의 고온 어태치 조건에서 단시간 이내에 경화되어 반도체 조립시 접착필름의 유동성이 낮아져 칩간 흔들림을 방지하고, 패키지 자체의 높은 신뢰성을 확보할 수 있는 고온 속경화형 접착필름 조성물에 관한 것이다. 속경화, 접착필름, 에폭시 수지, 페놀 수지
Abstract:
PURPOSE: An adhesive composition for a semiconductor device is provided to maximize operational efficiency of a semiconductor device during or after a semiconductor process and to prevent the deterioration of reliability of a semiconductor chip caused by transition metals remaining on the surface of the semiconductor chip or transition metal ions on the interface. CONSTITUTION: An adhesive composition for a semiconductor device includes elastomer resins, epoxy resins, phenolic curing resins, curing catalysts, silane coupling agents and filler. The silane coupling agent includes an epoxy group-containing silane coupling agent and a silane coupling agent containing transition metal-capturing functional groups.
Abstract:
PURPOSE: An adhesive composition for a semiconductor device, and a multi-layer adhesive film using thereof are provided to prevent the reliability deterioration of a semiconductor chip occurred from a transition metal infiltrated on a bonding interface. CONSTITUTION: A multi-layer adhesive film for a semiconductor device comprises a first adhesive layer(150) and a second adhesive layer(140). The first adhesive layer is formed on the upper side of a base film with an adhesive composition containing 50~90wt% of binder with a transition metal-trapping group. The second adhesive layer is formed on the upper side of the first adhesive layer with the adhesive composition containing 15~30wt% of the binder with the transition metal-trapping group.
Abstract:
PURPOSE: A photo-curable adhesive composition and an adhesive tape using thereof are provided to improve the material adhesion force before photo-curing, and to secure the low surface energy after photo-curing. CONSTITUTION: A photo-curable adhesive composition contains an acrylic adhesive binder, a photo-initiator, and a thermosetting material. The acrylic adhesive binder is produced by applying a vinyl group to an acrylic monomer obtained by polymerizing liquid silicon modified acrylrate resin and the acrylic monomer. The acrylic adhesive binder contains 3~5 parts of liquid silicon modified acrylrate resin by weight for 100 parts of acrylic monomer by weight. The liquid silicon modified acrylrate resin is mono-methacrylic functional polysiloxan with the water molecular weight of 12,000 grams per mol.
Abstract:
A hard coating composition is provided to impart high transparency, high hardness, and heat resistance to the surface of transparent polymer plastic. A hard coating composition includes 1-30wt% of polyfunctional acrylate oligomer, 5-40wt% of polyfunctional acrylate monomer, 5-40wt% of polyfunctional phosphazene-based monomer, 0.1-10wt% of a light initiator, and the balance of a solvent. The polyfunctional acrylate oligomer is one or their mixture selected from urethane acrylate, polyester acrylate, epoxy acrylate, silicon acrylate, acrylic acrylate, melamine acrylate oligomer, or mixtures thereof. The light initiator is 1-hydroxy-cyclohexyl-phenyl-ketone.
Abstract:
An apparatus for coating and curing a panel and a coated panel manufactured by the apparatus are provided to press and heat a panel coated with a coating solution to form a coating layer before the UV curing process to prevent the oxygen from being contacted with the coating layer to suppress the bad effect by oxygen during a UV curing process, thereby improving the surface strength of the panel. A film(16) is transferred along one surface or both surfaces of a panel. A storing tank(10) supplies a coating solution on the film. A coater(12) coats the film with the coating solution to the film. A pressing roll(18) presses the coated film. A heater(20) heats the panel, onto which the film is attached by the pressing roll, to disperse the coating solution of the film in a surface of the panel. A thickness controlling roll(21) controls the thickness of a coating layer, which is formed by pressing the panel passed by the heater. A UV irradiator(22) irradiates UV to the coating layer to cure the coating layer on the surface of the panel.
Abstract:
본 발명은 도전성 실리콘 페이스트 조성물에 관한 것으로, 보다 상세하게는 (a)전도성 입자(filler), (b)상온 수분 경화형 실리콘 수지(RTV 수지), 및 (c)실록산계 올리고머를 포함하는 디스펜싱이 가능한 전도성 실리콘 페이스트 조성물 및 이로부터 제조된 전자파 차폐용 가스켓에 관한 것이다. 본 발명에 따르면, 유기용매로서 방향족 유기용매가 아닌 선형 또는 환형구조의 실록산계 올리고머를 용매 대신 사용하기 때문에, 방향족 유기용매가 사용자에게 주는 불쾌감, 유해성 등의 문제가 발생되지 않는다. 실록산계 올리고머, 불쾌감, 방향족 유기용매, 유해성, 고전도성, 페이스트, 실리콘, 도전입자, 상온 수분 경화, 전자파차폐, 가스켓
Abstract:
PURPOSE: An adhesive composition for semiconductor is provided to reduce or omit semi-cure process, to remove or minimize foam voids, to impart residual curing rate after various curing processes conducted after die adhesion, and to easily remove voids at EMC molding. CONSTITUTION: An adhesive composition for semiconductor comprises two exothermic peaks at 65-350 °C. A first exothermic peak and a second exothermic peaks is respectively shown within 65-185 °C and 155-350 °C. The voids after mold for 10 minutes at 150°C, for 30 minutes at 150°C, and for 60 seconds at 175 °C are 10% or less. The adhesive composition comprises thermoplastic resin, epoxy resin, phenol curing agent, amine curing agent, curing catalyst, and filler, and has foam voids after curing for 10 minutes at 150°C, and 30 minutes at 150°C is 15% or less.