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公开(公告)号:SG112084A1
公开(公告)日:2005-06-29
申请号:SG200407096
申请日:2004-11-05
Applicant: ASML NETHERLANDS BV
Inventor: BLEEKER ARNO JAN
IPC: G02F1/03 , G03F7/20 , H01L21/027
Abstract: An array of individually controllable elements includes elements, each formed of a stack of layers of dielectric material. At least one layer is an electro-optical material. The at least one layer's refractive index for radiation that is plane polarized in a given direction can be changed by application of a voltage in order to change the reflection/transmission characteristic of the boundary between this layer and the adjacent layer.
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公开(公告)号:SG108995A1
公开(公告)日:2005-02-28
申请号:SG200404364
申请日:2004-07-22
Applicant: ASML NETHERLANDS BV
Inventor: BLEEKER ARNO JAN
IPC: G03F7/20 , H01L21/027
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公开(公告)号:SG10201500569RA
公开(公告)日:2015-03-30
申请号:SG10201500569R
申请日:2005-08-12
Applicant: ASML NETHERLANDS BV
Inventor: DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMANS HENRICUS PETRUS MARIA , VAN DER SCHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MARTINUS
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.
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公开(公告)号:NL1035732A1
公开(公告)日:2009-02-02
申请号:NL1035732
申请日:2008-07-21
Applicant: ASML NETHERLANDS BV
Inventor: BLEEKER ARNO JAN , MEER ASCHWIN LODEWIJK HENDRICUS
IPC: H01L21/027 , G03F7/20
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公开(公告)号:DE602005011220D1
公开(公告)日:2009-01-08
申请号:DE602005011220
申请日:2005-10-07
Applicant: ASML NETHERLANDS BV
Inventor: TROOST KARS ZEGER , BLEEKER ARNO JAN
IPC: G03F7/20
Abstract: Lithographic apparatus using an array of individually controllable elements in which a fraction of the intensity of the beam of radiation patterned by the array of individually controllable elements is diverted to an image sensor for verifying the quality of the image generated.
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公开(公告)号:DE60227135D1
公开(公告)日:2008-07-31
申请号:DE60227135
申请日:2002-07-24
Applicant: ASML NETHERLANDS BV
Inventor: BLEEKER ARNO JAN , DE JAGER PIETER WILLEM HERMAN , HINTERSTEINER JASON DOUGLAS , KRUIZINGA BORGERT , MCCARTHY MATTHEW EUGENE , OSKOTSKY MARK , RYZHIKOV LEV , SAKIN LEV , SMIRNOV STANISLAV , SNIJDERS BART , VAN DER MAST KAREL DIEDERICK
IPC: G03F7/20 , H01L21/027
Abstract: An imaging apparatus according to one embodiment of the invention includes a programmable patterning structure configured to pattern a projection beam of radiation according to a desired pattern. The programmable patterning structure includes a plurality of separate patterning sub-elements, each sub-element being configured to generate a patterned sub-beam. At least one of the separate patterning sub-elements is configured to generate a patterned sub-beam whose cross-section contains regions of different intensities. The imaging apparatus also includes a combining structure configured to combine the plurality of patterned sub-beams into a single patterned image, and a projection system configured to project the patterned image onto a target portion of a substrate.
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57.
公开(公告)号:SG133539A1
公开(公告)日:2007-07-30
申请号:SG2006087381
申请日:2006-12-15
Applicant: ASML NETHERLANDS BV
Inventor: TROOST KARS ZEGER , BASELMANS JOHANNES JACOBUS MAT , BLEEKER ARNO JAN , GREENEICH JAMES SHERWOOD
Abstract: A lithographic apparatus and method in which a relatively high resolution exposure, for example of a repeating pattern, is trimmed using a relatively low resolution exposure. According, a compromise between provision of a high resolution pattern and flexibility in the pattern to be formed is provided.
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公开(公告)号:SG121967A1
公开(公告)日:2006-05-26
申请号:SG200506521
申请日:2005-10-13
Applicant: ASML NETHERLANDS BV
Inventor: TROOST KARS ZEGER , BLEEKER ARNO JAN
Abstract: Lithographic apparatus using an array of individually controllable elements in which a fraction of the intensity of the beam of radiation patterned by the array of individually controllable elements is diverted to an image sensor for verifying the quality of the image generated.
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公开(公告)号:SG120263A1
公开(公告)日:2006-03-28
申请号:SG200505153
申请日:2005-08-12
Applicant: ASML NETHERLANDS BV
Inventor: DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMAN HENRICUS PETRUS MARIA , VAN DER SCHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MAR
Abstract: An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized light and their relative phase difference. The apparatus according to the invention may be used for calculating variations in substrate tilt by putting a shaped obscuration in the radiation beam and detecting changes in the width and shape of the shaped obscuration on the substrate caused by variations in the substrate tilt. The shaped obscuration may be a cross-hair or any other shape. The idea of measuring wafer tilt is based on the fundamental relation that a tilt in the wafer plane causes a shift in the pupil plane.
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公开(公告)号:SG173420A1
公开(公告)日:2011-08-29
申请号:SG2011053931
申请日:2005-08-12
Applicant: ASML NETHERLANDS BV
Inventor: DEN BOEF ARIE JEFFREY , BLEEKER ARNO JAN , VAN DOMMELEN YOURI JOHANNES LAURENTIUS MARIA , DUSA MIRCEA , KIERS ANTOINE GASTON MARIE , LUEHRMANN PAUL FRANK , PELLEMANS HENRICUS PETRUS MARIA , VAN DER SCHAAR MAURITS , GROUWSTRA CEDRIC DESIRE , VAN KRAAIJ MARKUS GERARDUS MARTINUS
Abstract: METHOD AND APPARATUS FOR ANGULAR-RESOLVED SPECTROSCOPIC LITHOGRAPHY CHARACTERIZATIONAn apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensify of TM- and TB-polarized light and their relative phase difference.Figure 3
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