公开(公告)号：EP2625237A4

公开(公告)日：2014-03-19

申请号：EP11830273

申请日：2011-10-04

Applicant: BASF SE

Inventor： DRESCHER BETTINA ,  NOLLER BASTIAN MARTEN ,  SCHMITT CHRISTINE ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321

CPC classification number: C09K13/04 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  C09K13/06 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing (CMP) composition Abstract Use of a chemical mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a mixture thereof, (B) a heteropolyacid or a salt thereof, (C) a salt comprising chloride, fluoride, bromide, or a mixture thereof as anion, and (D) an aqueous medium, for polishing a substrate comprising a self-passivating metal, germanium, nickel phosphorous (NiP), or a mixture thereof.

公开(公告)号：EP2613910A4

公开(公告)日：2017-12-13

申请号：EP11823141

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  VENKATARAMAN SHYAM SUNDAR ,  PINDER HARVEY WAYNE

IPC: B24B37/04 ,  C09G1/02 ,  C09K3/14

CPC classification number: H01L21/30625 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463 ,  C11D3/14 ,  C11D3/3707 ,  C11D3/3723 ,  C11D3/3773 ,  C11D3/3776 ,  C11D7/20 ,  C11D11/0047 ,  H01L21/31053

Abstract: CMP process for substrates containing silicon oxide dielectric films and polysilicon and/or silicon nitride films comprising the steps of (1) contacting the substrate with an aqueous composition containing (A) abrasive particles which are positively charged when dispersed in an aqueous medium having a pH in the range of from 3 to 9; (B) a water-soluble or water-dispersible linear or branched alkylene oxide homopolymer or copolymer; and (C) a water-soluble or water-dispersible polymer selected from (c1) aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers, (c2) homopolymers and copolymers of acrylamide monomers of the general formulas I and II: H2C=C(-R)-C(=0)-N(-R1)(-R2) (I), H2C=C(-R)-C(=0)-R3 (II), wherein the variables have the following meaning R hydrogen atom, fluorine atom, chlorine atom, nitrile group, or organic residue; R1 and R2 hydrogen atom or organic residue; R3 saturated N-heterocyclic ring; (c3) cationic polymeric flocculants; and (c4) mixtures thereof; (2) polishing the substrate until the silicon oxide dielectric film is removed and the polysilicon and/or silicon nitride film is or are exposed exposed.

公开(公告)号：EP2539411A4

公开(公告)日：2017-11-15

申请号：EP11744334

申请日：2011-01-19

Applicant: BASF SE

Inventor： LI YUZHUO ,  WANG KE

IPC: H01L21/321 ,  C09G1/02 ,  C09K3/14 ,  H01L21/768

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463

Abstract: A chemical-mechanical polishing composition comprising: (a) at least one type of abrasive particles; (b) at least two oxidizing agents; (c) at least one pH adjusting agent; and (d) deionized water; (e) optionally comprising at least one antioxidant, and a method for the chemical-mechanical planarization of a substrate containing at least one copper layer, at least one ruthenium layer, and at least one tantalum layer comprising the steps of (1) providing the said chemical-mechanical polishing composition; (2) contacting the substrate surface to be polished with the chemical-mechanical polishing composition and a polishing pad; and (3) chemically and mechanically polishing the substrate surface by way of moving the polishing pad relative to the substrate.

公开(公告)号：EP2507332A4

公开(公告)日：2017-08-02

申请号：EP10832737

申请日：2010-11-25

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  LI YUZHUO ,  BRANDS MARIO ,  LAN YONGQING ,  RUSHING KENNETH ,  RAMJI KARPAGAVALLI

IPC: C09G1/02 ,  B01J13/14 ,  C09K3/14 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463

公开(公告)号：EP2684213A4

公开(公告)日：2014-11-26

申请号：EP12757663

申请日：2012-02-28

Applicant: BASF SE

Inventor： LI YUZHUO ,  WANG CHANGXUE ,  SHEN DANIEL KWO-HUNG ,  GAO NING

IPC: H01L21/306 ,  C09G1/02 ,  H01L21/768

CPC classification number: H01L21/30625 ,  C09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76898

公开(公告)号：EP2688966A4

公开(公告)日：2014-11-12

申请号：EP12760432

申请日：2012-03-19

Applicant: BASF SE

Inventor： NOLLER BASTIAN ,  LAUTER MICHAEL ,  SUGIHARTO ALBERT BUDIMAN ,  LI YUZHUO ,  RUSHING KENNETH ,  FRANZ DIANA ,  BÖHN ROLAND ,  GAO NING

IPC: C09G1/02 ,  H01L21/321

CPC classification number: H01L21/3212 ,  C09G1/02 ,  C09G1/04 ,  C09K3/1463 ,  H01L21/30625

公开(公告)号：EP2614123A4

公开(公告)日：2014-07-30

申请号：EP11823142

申请日：2011-09-06

Applicant: BASF SE

Inventor： LI YUZHUO ,  CHU JEA-JU ,  VENKATARAMAN SHYAM SUNDAR ,  USMAN IBRAHIM SHEIK ANSAR ,  PINDER HARVEY WAYNE

IPC: C09G1/02 ,  C03C19/00 ,  C09G1/04 ,  C09G1/18 ,  C09K3/14

CPC classification number: C09K3/1409 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053

公开(公告)号：EP2625236A4

公开(公告)日：2014-05-14

申请号：EP11830272

申请日：2011-10-04

Applicant: BASF SE

Inventor： RAMAN VIJAY IMMANUEL ,  RITTIG FRANK ,  LI YUZHUO ,  CHIU WEI LAN WILLIAM

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

CPC classification number: H01L21/30625 ,  C09G1/02 ,  C09G1/04 ,  G09G1/02 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/7684

Abstract: An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.

Abstract translation: 在wässrige抛光组合物，包括（A）磨粒和（B）以选自水溶性或水分散性表面活性剂的由具有（B1）选自疏水性基团具有10到支链烷基的由...组成选定的两亲性非离子表面活性剂 18个碳原子; 和（b2）选自聚氧化烯基团，其包含（B21）氧化乙烯单体单元和所选择的亲水性基团（B22）substituiertem氧化烯单体单元worin所述取代基选自烷基，环烷基，或芳基，烷基 - 环烷基的选择， 烷基 - 芳基，环烷基 - 芳基和烷基 - 环烷基 - 芳基，聚氧化烯基团，所述含单体单元（B21）和（B22）在无规，交替，梯度和/或嵌段状分布; 用于基板CMP工艺具有图案化或非图案化的低k或超低k介电层使采用了所述的wässrige抛光组合物; 并且由于使用上述的wässrige研磨用组合物用于制造电子，机械和光学器件。