公开(公告)号：DE102007020263A1

公开(公告)日：2008-11-06

申请号：DE102007020263

申请日：2007-04-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  SCHMALZBAUER UWE ,  ZELSACHER RUDOLF

IPC: H01L23/485

公开(公告)号：DE102006046869A1

公开(公告)日：2008-04-03

申请号：DE102006046869

申请日：2006-10-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS MARTIN ,  SANTOS RODRIGUEZ FRANCISCO JAV ,  ZUNDEL MARKUS

IPC: H01L21/302

Abstract: The method involves thinning a semiconductor wafer (10) in which functional areas of a semiconductor device are formed. A trench with preset depth is produced in a front side (12) of the semiconductor wafer. The trench is used as a thickness-criterion for controlling the thinning of the wafer. An electrode is provided in the trench, and electrical resistance and electrical capacitance between the electrode and a rear side (13) of the semiconductor wafer is measured. Independent claims are also included for the following: (1) a manufacturing device for a semiconductor device, comprising a holding device (2) a semiconductor wafer, comprising a front side and a rear side.

公开(公告)号：DE102007010884A1

公开(公告)日：2007-09-20

申请号：DE102007010884

申请日：2007-03-06

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  HIRLER FRANZ ,  KRISCHKE NORBERT

IPC: H01L21/334 ,  H01L29/78

Abstract: The method involves arranging trenches (11) in a semiconductor body (100), and providing a gate electrode in the trenches. Electrode structures with an electrode are arranged in the trenches. Trenches of a transistor structure and the trenches of the electrode structures are produced by a common procedure. The electrode of the electrode structures and the gate electrode of the transistor structure are produced by the common procedure. An independent claim is also included for a semiconductor component circuit provided with a semiconductor body.

公开(公告)号：DE102005055838A1

公开(公告)日：2007-05-31

申请号：DE102005055838

申请日：2005-11-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  HIRLER FRANZ

IPC: H01L21/28 ,  H01L21/8234 ,  H01L27/088

Abstract: Production of a contact site in a surface region of a semiconductor structure comprises forming a recess (50) in the surface region up to a prescribed recess depth, implanting a dopant (52) in a recess floor at the recess depth, tempering the structure to diffuse out the dopant and deepening the recess to the required depth. An independent claim is also included for a semiconductor structure having a contact site formed in its surface region.

公开(公告)号：DE10343084B4

公开(公告)日：2006-07-06

申请号：DE10343084

申请日：2003-09-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  ZELSACHER RUDOLF ,  PERI HERMANN ,  KOTZ DIETMAR ,  KNAPP ACHIM

IPC: H01L21/78 ,  H01L21/76

公开(公告)号：DE102004052678B3

公开(公告)日：2006-06-14

申请号：DE102004052678

申请日：2004-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WERNER WOLFGANG ,  ZUNDEL MARKUS ,  PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/78

Abstract: A power trench transistor comprises a semiconductor body in which a cell array and an edge region surrounding the cell array are formed. First edge trenches are formed within the edge region. The first edge trenches contain field electrodes and the longitudinal orientations of the first edge trenches run from the cell array towards the edge of the trench transistor.

公开(公告)号：DE102004045467A1

公开(公告)日：2006-03-30

申请号：DE102004045467

申请日：2004-09-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  KRISCHKE NORBERT ,  MEYER THORSTEN

IPC: H01L29/78 ,  H01L23/62

公开(公告)号：DE10345447A1

公开(公告)日：2005-05-04

申请号：DE10345447

申请日：2003-09-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  ZUNDEL MARKUS

IPC: H01L21/306 ,  H01L21/331 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78

Abstract: Production of a semiconductor power component (10) comprises forming a semiconductor structure (2) in/on a substrate (1), and trimming a part of the substrate to the target thickness using an etchant at an etching rate depending on the concentration and/or type of dopant. The etchant is selected so that the trimming process is stopped or slowed down by a semiconductor region acting as stop layer.

公开(公告)号：DE10201489B4

公开(公告)日：2005-04-28

申请号：DE10201489

申请日：2002-01-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  PFIRSCH FRANK

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78

公开(公告)号：DE10153315B4

公开(公告)日：2004-05-19

申请号：DE10153315

申请日：2001-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ZUNDEL MARKUS ,  HIRLER FRANZ

IPC: H01L21/336 ,  H01L23/485 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L23/52

Abstract: A trench (30) having wall region (32b) is formed in semiconductor substrate (20). An upper trench section (30o) is included in wall regions of trench. A contact region is formed outside and proximate to trench in the region of upper trench section. A terminal region for electrical connection is formed within the trench. A trench side region having width narrower than width of trench is included in the trench. Independent claims are also included for the following: (1) trench structure transistor; (2) trench MOSFET; (3) insulated gate bipolar transistor; and (4) field plate transistor.