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公开(公告)号:GB2422720A
公开(公告)日:2006-08-02
申请号:GB0518966
申请日:2003-06-18
Applicant: INTEL CORP
Inventor: MA QING , CHOU TSUNG-KUAN ALLEN
IPC: B81C1/00 , H01L23/522 , B81B7/00 , B81B7/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/52 , H01L23/66 , H01L27/04
Abstract: A conductive bridge 16 in a second conductive layer electrically connects a pair of spaced apart conductive strips 12 in a first conductive layer. A gap (44, fig 4) between the conductive strips 12 is spanned by the bridge 16 while isolating the conductive strips and the bridge from a conducting line (46, fig 4) extending through the gap (44). Preferably the bridge is formed over a sacrificial polymeric material (48, fig 10) which is subsequently removed by heating to leave an airgap 58 between the bridge 16 and the conducting line (46). The system can be used to route a control voltage line (18a, fig 2) through gaps in multiple ground lines (12a, 12b, 12c fig 2) where each gap is spanned by a conductive bridge (20, 20a fig 2).
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公开(公告)号:HK1060660A1
公开(公告)日:2004-08-13
申请号:HK04103550
申请日:2004-05-19
Applicant: INTEL CORP
Inventor: WANG LI-PENG , BAR-SADEH EYAL , RAO VALLURI , HECK JOHN , MA QING , TRAN QUAN , TALALYEVSKIY ALEXANDER , GINSBURG EYAL
Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.
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公开(公告)号:AU2003298535A8
公开(公告)日:2004-05-04
申请号:AU2003298535
申请日:2003-08-01
Applicant: INTEL CORP
Inventor: TRAN QUAN , GINSBURG EYAL , RAO VALLURI , WANG LI-PENG , TALALYEVSKY ALEXANDER , MA QING , BAR-SADEH EYAL , HECK JOHN
Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.
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公开(公告)号:AU2003265874A1
公开(公告)日:2004-03-19
申请号:AU2003265874
申请日:2003-08-28
Applicant: INTEL CORP
Inventor: MA QING , RAVI KRAMADHATI , RAO VALLURI
Abstract: A switch structure having multiple contact surfaces that may contact each other. One or more of the contact surfaces may be coated with a resilient material such as diamond.
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公开(公告)号:AU2003269961A1
公开(公告)日:2004-03-03
申请号:AU2003269961
申请日:2003-08-13
Applicant: INTEL CORP
Inventor: MA QING
Abstract: A microelectromechanical system (MEMS) switch that includes a signal contact, an actuation electrode and a beam that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode is positioned between the first and second portions of the signal contact.
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公开(公告)号:DE10326555A1
公开(公告)日:2004-01-22
申请号:DE10326555
申请日:2003-06-12
Applicant: INTEL CORP
Inventor: MA QING , CHOU TSUNG-KUAN ALLEN
IPC: B81C1/00 , B81B7/00 , B81B7/02 , H01L21/3205 , H01L21/768 , H01L21/822 , H01L23/52 , H01L23/522 , H01L23/66 , H01L27/04 , H01L23/535
Abstract: A conductive bridge (16) in a second conductive layer may be utilized to join a pair of spaced apart conductive strips (12) in a first conductive layer. A gap (44) between the first and second strips (12) may be bridged by the bridge (16) while isolating both the first and second strips (12) and the bridge (16) itself from another conductor (18) which extends through the gap (44) between the first and second strips (12).
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公开(公告)号:HK1055844A1
公开(公告)日:2004-01-21
申请号:HK03108126
申请日:2003-11-10
Applicant: INTEL CORP
Inventor: MU XIAO-CHUN , MA QING , FUJIMOTO HARRY
IPC: H01L20090101 , H01L21/56 , H01L21/60 , H01L21/68 , H01L23/31 , H01L23/538 , H05K1/18 , H05K3/46
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公开(公告)号:AU3274702A
公开(公告)日:2002-06-18
申请号:AU3274702
申请日:2001-11-09
Applicant: INTEL CORP
Inventor: HENAO MARIA V , MU XIAO-CHUN , MA QING , VU QUAT T , TOWLE STEVEN N
IPC: H01L23/12 , H01L21/56 , H01L23/16 , H01L23/31 , H01L23/433 , H01L23/538 , H01L25/04 , H01L25/18
Abstract: A microelectronic package fabrication technology that attaches at least one microelectronic die onto a heat spreader and encapsulates the microelectronic die/dice thereon which may further include a microelectronic packaging core abutting the heat spreader wherein the microelectronic die/dice reside within at least one opening in a microelectronic package core. After encapsulation, build-up layers may be fabricated to form electrical connections with the microelectronic die/dice.
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公开(公告)号:AU8851001A
公开(公告)日:2002-03-22
申请号:AU8851001
申请日:2001-08-29
Applicant: INTEL CORP
Inventor: HENAO MARIA , MU XIAO-CHUN , MA QING , VU QUAT , LI JIAN
IPC: H01L23/532 , H01L23/538
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公开(公告)号:AU3651001A
公开(公告)日:2001-08-07
申请号:AU3651001
申请日:2001-01-22
Applicant: INTEL CORP
Inventor: CHENG PENG , MA QING
IPC: H01G5/16
Abstract: The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.
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