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公开(公告)号：US20170117450A1
公开(公告)日：2017-04-27
申请号：US15401710
申请日：2017-01-09
Applicant: EPISTAR CORPORATION
Inventor： Shih-I CHEN , Chia-Liang HSU , Tzu-Chieh HSU , Han-Min WU , Ye-Ming HSU , Chien-Fu HUANG , Chao-Hsing CHEN , Chiu-Lin YAO , Hsin-Mao LIU , Chien-Kai CHUNG
IPC: H01L33/62 , H01L25/075 , H01L33/42 , H01L33/60 , H01L33/38
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
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公开(公告)号：US20160005926A1
公开(公告)日：2016-01-07
申请号：US14791949
申请日：2015-07-06
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
CPC classification number: H01L33/38 , H01L33/405
Abstract: An optoelectronic device, comprising: a first semiconductor layer comprising four boundaries, a corner formed by two of the neighboring boundaries, a first surface, and a second surface opposite to the first surface; a second semiconductor layer formed on the first surface of the first semiconductor layer; a second conductive type electrode formed on the second semiconductor layer; and two first conductive type electrodes formed on the first surface, wherein the first conductive type electrodes are separated and formed a pattern.
Abstract translation: 一种光电子器件，包括：包括四个边界的第一半导体层，由两个相邻边界形成的拐角，第一表面和与第一表面相对的第二表面; 形成在第一半导体层的第一表面上的第二半导体层; 形成在所述第二半导体层上的第二导电型电极; 以及形成在第一表面上的两个第一导电型电极，其中第一导电类型电极被分离并形成图案。
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公开(公告)号：US20150357524A1
公开(公告)日：2015-12-10
申请号：US14827872
申请日：2015-08-17
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing HON , Chao-Hsing CHEN , Tsun-Kai KO , Chien-Fu SHEN , Jia-Kuen WANG , Hung-Che CHEN
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode comprising an contact area and an extension electrically connected to the first semiconductor layer, wherein the extension is connected to the contact area; a second electrode on the second semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first electrode and the second electrode, wherein the extension is formed beyond a projected area of the second conductive part and not covered by the first conductive part, and the contact area is covered by the first conductive part.
Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 第一电极，其包括接触区域和与第一半导体层电连接的延伸部分，其中延伸部连接到接触区域; 在所述第二半导体层上的第二电极; 以及形成在所述发光半导体堆叠上并分别电连接到所述第一电极和所述第二电极的第一导电部分和第二导电部分，其中所述延伸部形成在所述第二导电部件的投影区域之外， 第一导电部分，并且接触区域被第一导电部件覆盖。
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公开(公告)号：US20150255676A1
公开(公告)日：2015-09-10
申请号：US14718242
申请日：2015-05-21
Applicant: EPISTAR CORPORATION
Inventor： Schang-Jing HON , Chao-Hsing CHEN , Tsun-Kai KO , Chien-Fu SHEN , Jia-Kuen WANG , Hung-Che CHEN
CPC classification number: H01L33/387 , H01L33/20 , H01L33/24 , H01L33/38 , H01L33/44 , H01L33/46 , H01L33/54 , H01L33/62 , H01L2224/73265
Abstract: A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a plurality of extensions formed on the first semiconductor layer; and a first conductive part and a second conductive part formed on the light-emitting semiconductor stack and respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein one of the plurality of extensions is formed beyond a projected area of the second conductive part and not covered by the first conductive part.
Abstract translation: 发光元件包括：发光半导体堆叠，包括第一半导体层，第一半导体层上的第二半导体层和第一半导体层与第二半导体层之间的发光层; 形成在所述第一半导体层上的多个延伸部; 以及第一导电部分和第二导电部分，其形成在所述发光半导体堆叠上并且分别电连接到所述第一半导体层和所述第二半导体层，其中所述多个延伸部中的一个形成在所述第二导电 部分未被第一导电部件覆盖。
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公开(公告)号：US20250143026A1
公开(公告)日：2025-05-01
申请号：US19009855
申请日：2025-01-03
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chao-Hsing CHEN , Chi-Ling LEE , Chen OU , Min-Hsun HSIEH
IPC: H10H20/831 , H01L25/13 , H10H20/833
Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.
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Patent Agency Ranking
公开(公告)号：US20240339564A1
公开(公告)日：2024-10-10
申请号：US18625617
申请日：2024-04-03
Applicant: EPISTAR CORPORATION
Inventor： Wei-Che WU , Chih-Hao CHEN , Yu-Ling LIN , Chao-Hsing CHEN , Yong-Yang CHEN
CPC classification number: H01L33/22 , H01L33/005 , H01L33/60
Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.
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公开(公告)号：US20240274766A1
公开(公告)日：2024-08-15
申请号：US18641195
申请日：2024-04-19
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
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公开(公告)号：US20240154065A1
公开(公告)日：2024-05-09
申请号：US18410823
申请日：2024-01-11
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Chien-Chih LIAO , Tzu-Yao TSENG , Tsun-Kai KO , Chien-Fu SHEN
IPC: H01L33/38
CPC classification number: H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405
Abstract: An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.
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公开(公告)号：US20230317898A1
公开(公告)日：2023-10-05
申请号：US18205920
申请日：2023-06-05
Applicant: EPISTAR CORPORATION
Inventor： Hsin-Ying WANG , Chih-Hao CHEN , Chien-Chih LIAO , Chao-Hsing CHEN , Wu-Tsung LO , Tsun-Kai KO , Chen OU
Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.
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公开(公告)号：US20230238488A1
公开(公告)日：2023-07-27
申请号：US18118488
申请日：2023-03-07
Applicant: EPISTAR CORPORATION
Inventor： Chao-Hsing CHEN , Jia-Kuen WANG , Tzu-Yao TSENG , Tsung-Hsun CHIANG , Bo-Jiun HU , Wen-Hung CHUANG , Yu-Ling LIN
CPC classification number: H01L33/382 , H01L33/00 , H01L33/10 , H01L33/24 , H01L33/385 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/0012 , H01L33/02
Abstract: A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.
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