公开(公告)号：DE10148227A1

公开(公告)日：2003-04-30

申请号：DE10148227

申请日：2001-09-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： ZEHNDER ULRICH ,  FEHRER MICHAEL ,  HAERLE VOLKER ,  KUEHN FRANK

IPC: H01L33/20 ,  H01L33/00

Abstract: A radiation-emitting semiconductor chip, having a multilayer structure ( 100 ) containing a radiation-emitting active layer ( 10 ), and having a window layer ( 20 ), which is transmissive to a radiation emitted by the active layer ( 10 ) and is arranged downstream of the multilayer structure ( 100 ) in the direction of a main radiating direction of the semiconductor component. The window layer ( 20 ) has at least one peripheral side area ( 21 ), which, in the course from a first main area ( 22 ) facing the multilayer structure ( 100 ) in the direction toward a second main area ( 23 ) remote from the multilayer structure ( 100 ), firstly has a first side area region ( 24 ) which is beveled, curved or stepped in such a way that the window layer widens with respect to the size of the first main area ( 22 ). A peripheral side area ( 11 ) of the multilayer structure ( 100 ) and at least a part of the beveled, curved or stepped first side area region ( 24 ) are coated with a continuous electrically insulating layer ( 30 ). A radiation-emitting component is disclosed having a chip of this type, and also disclosed is a method for simultaneously producing a multiplicity of such chips.

公开(公告)号：DE10142653A1

公开(公告)日：2003-04-30

申请号：DE10142653

申请日：2001-08-31

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHOLZ FERDINAND ,  LELL ALFRED ,  HAERLE VOLKER ,  DUMITRU VIOREL ,  SCHWEIZER HEINZ ,  BADER STEFAN ,  KUHN BERTRAM ,  OFF JUERGEN

IPC: H01L33/14 ,  H01L33/30 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/30 ,  H01S5/323 ,  H01L33/00

Abstract: Radiation-emitting semiconductor component comprises a semiconductor body (1) having a radiation-producing active layer (9) and a p-conducting contact layer (2) containing InxGa1-xN (where x = 0-1) or AlyInxGa1-x-yN (where x = 0-1; y = 0-1; and x + y = 0-1). A contact metallization (3) is formed on the contact layer. An Independent claim is also included for a process for the production of a radiation-emitting semiconductor comprising preparing a semiconductor surface, applying a p-conducting contact layer containing InxGa1-xN (where x = 0-1) or AlyInxGa1-x-yN (where x = 0-1; y = 0-1; and x + y = 0-1) on the surface, and applying a contact metallization on the contact layer. Preferred Features: The contact layer is doped with magnesium. The contact metallization contains Pd, Ni, Au or Pt or an alloy of these.

公开(公告)号：DE10111501A1

公开(公告)日：2002-09-19

申请号：DE10111501

申请日：2001-03-09

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： BAUR JOHANNES ,  EISERT DOMINIK ,  FEHRER MICHAEL ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  ORTMANN MARIANNE ,  STRAUS UWE ,  VOELKL JOHANNES ,  ZEHNDER ULRICH

IPC: H01L33/00 ,  H01L33/02 ,  H01L33/20

Abstract: The invention relates to a radiation-emitting semiconductor component with an improved radiation yield and to a method for producing the same. The semiconductor element has a multilayer structure (2) with an active layer (3) for generating the radiation within the multilayer structure (2) and a window (1) with a first and a second primary surface. The multilayer structure adjoins the first primary surface (5) of the window (1). At least one recess is formed in the window (1), starting from the second primary surface (6), for increasing the radiation yield. The recess preferably has a trapezoidal cross-section, which tapers towards the first primary surface (5) and can be produced, for example, by sawing into the window.

公开(公告)号：DE10051465A1

公开(公告)日：2002-05-02

申请号：DE10051465

申请日：2000-10-17

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  BADER STEFAN ,  EISERT DOMINIK ,  HAERLE VOLKER

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/40 ,  H01L33/44

Abstract: The invention relates to a method for the production of a semiconductor component, comprising a number of GaN layers, preferably serving as a radiation generator. A number of GaN-based layers (4) are deposited on a composite substrate, comprising a substrate body (1) and an intermediate layer (2), whereby the thermal coefficient of expansion of the substrate body (1) is similar to, or preferably greater than the thermal coefficient of expansion of the layers (4) based on GaN and the GaN-based layers (4) are deposited on the intermediate layer (2). The intermediate layer and the substrate body are connected by means of a wafer bonding process.

公开(公告)号：DE10033496A1

公开(公告)日：2002-01-31

申请号：DE10033496

申请日：2000-07-10

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： STRAUS UWE ,  ZEHNDER ULRICH ,  EISERT DOMINIK ,  HAERLE VOLKER

IPC: H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/00

Abstract: The invention relates to a semiconductor chip (10), in which the active layer (3) is interrupted by cavities (11). In this way, the lateral surfaces (9) of the active layer (3) when viewed from a light generating point (6) appear at a greater solid angle and the light paths in the active layer (3) are shortened.

公开(公告)号：DE19955747A1

公开(公告)日：2001-05-23

申请号：DE19955747

申请日：1999-11-19

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： HAHN BERTHOLD ,  LUGAUER HANS-JUERGEN ,  BADER STEFAN ,  BOLAY HELMUT ,  HAERLE VOLKER

IPC: H01L33/06 ,  H01L33/32 ,  H01S5/34 ,  H01S5/343 ,  H01L33/00

Abstract: The device comprises alternate well layers (6a) and barrier layers (6b) made of different types of semiconductor layers. The well layers are formed from thin gallium indium nitride layers. The blocking layers are formed from thicker gallium nitride layers. An active quantum well made of gallium indium nitride (6c) adjoins the uppermost blocking layer. Super-lattices are formed by the well layers and the blocking layers. The well layers are thinner than 3 nm, and the blocking layers are 5 nm thick or thicker.

公开(公告)号：DE19952932C1

公开(公告)日：2001-05-03

申请号：DE19952932

申请日：1999-11-03

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： SCHLERETH KARL-HEINZ ,  HAERLE VOLKER ,  STATH NORBERT

IPC: H01L33/04 ,  H01L33/08 ,  H01L33/50 ,  H01L33/00

Abstract: A white light source comprises a UV-/blue-emitting semi-conductor LED (1), an embedding mass with phosphor particles (6) and several light emitting zones. Said light emitting zones are arranged within a layered structure, on a common substrate (10, 20), whereby the emission maxima of the light emitting zones are energetically staggered by various choices of compound or semi-conductor material thickness.

公开(公告)号：WO2004068572A8

公开(公告)日：2005-12-15

申请号：PCT/DE2004000123

申请日：2004-01-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KAISER STEPHAN ,  HAERLE VOLKER ,  HAHN BERTHOLD

Inventor： KAISER STEPHAN ,  HAERLE VOLKER ,  HAHN BERTHOLD

IPC: H01L21/268 ,  H01L21/78 ,  H01L33/00

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

Abstract: The invention relates to a method for producing a semiconductor component, according to which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses, the pulse duration of the laser pulses being less than or equal to 10 ns. The laser pulses have a spatial beam profile, whose flank slope is gentle enough to prevent cracks in the semiconductor layer (2) caused by thermally induced lateral stresses, during the separation of the semiconductor layer (2) from the substrate (1).

Abstract translation: 本发明涉及一种方法，用于生产，其中将基板（1）的半导体层（2）是通过用激光脉冲照射分离的半导体器件中，激光脉冲的脉冲持续时间小于或等于10纳秒。 激光脉冲具有空间束轮廓，其斜率选择如此低，以致造成热诱导的侧向应力的半导体层（2）中的裂缝避免在半导体层（2）和衬底的分离（1）。

公开(公告)号：WO2004068572A2

公开(公告)日：2004-08-12

申请号：PCT/DE2004000123

申请日：2004-01-27

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  KAISER STEPHAN ,  HAERLE VOLKER ,  HAHN BERTHOLD

Inventor： KAISER STEPHAN ,  HAERLE VOLKER ,  HAHN BERTHOLD

IPC: H01L21/268 ,  H01L21/78 ,  H01L33/00 ,  H01L21/58

CPC classification number: H01L21/268 ,  H01L21/7806 ,  H01L33/0079 ,  H01L2224/83001

Abstract: The invention relates to a method for producing a semiconductor component, according to which a semiconductor layer (2) is separated from a substrate (1) by irradiation with laser pulses (6), the pulse duration of the laser pulses (6) being less than or equal to 10 ns. The laser pulses (6) have a spatial beam profile (7), whose flank slope is gentle enough to prevent cracks in the semiconductor layer (2) caused by thermally induced lateral stresses, during the separation of the semiconductor layer (2) from the substrate (1).

Abstract translation: 本发明涉及的制造方法，其中通过用激光脉冲（6）照射衬底（1）的半导体层（2）被分离的半导体装置，其中所述激光脉冲的脉冲持续时间（6）小于或等于10纳秒。 激光脉冲（6）具有空间光束轮廓（7），其斜率被选择非常小，使得半导体层的分离过程中（2）和衬底（1）的半导体层中的裂纹（2）引起的热致侧向应力 避免。

公开(公告)号：WO03043092A3

公开(公告)日：2003-10-02

申请号：PCT/DE0204178

申请日：2002-11-12

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BRUEDERL GEORG ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  LUGAUER HANS-JUERGEN ,  STRAUSS UWE ,  WEIMAR ANDREAS

Inventor： BRUEDERL GEORG ,  HAHN BERTHOLD ,  HAERLE VOLKER ,  LUGAUER HANS-JUERGEN ,  STRAUSS UWE ,  WEIMAR ANDREAS

IPC: H01S5/042 ,  H01L21/285 ,  H01L21/363 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/40 ,  H01L21/28 ,  H01L33/00

CPC classification number: H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/14 ,  H01L33/325 ,  H01L33/40

Abstract: The invention relates to an ohmic contact structure comprising a metallisation layer (14) which is arranged on a semiconductor material (10). A contact layer is formed in the semiconductor material (10, said contact layer comprising a first partial region which is adjacent to the metallisation layer (14) and a second partial region (18) following the first partial region. The contact layer is doped in such a way that the doping concentration (N2) in the first partial region (12) is higher than the doping concentration (N1) in the second partial region (18).

Abstract translation: 本发明涉及一种具有设置在半导体材料（10），金属化（14）的欧姆接触结构，其中在所述半导体材料在相邻的（10）形成的接触层的金属镀层（14）的第一部分中的一个和所述第一 包括所述第二部分（18）的下游部分区域。 接触层被掺杂为所述第一部分（12）比所述掺杂浓度的掺杂浓度（N 2）（N 1）是在所述第二部分（18）。