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公开(公告)号：KR1020100064311A
公开(公告)日：2010-06-14
申请号：KR1020090061163
申请日：2009-07-06
Applicant: 한국전자통신연구원
CPC classification number: H04L27/3863 , H04B1/16
Abstract: PURPOSE: An I/Q mismatching compensation apparatus and a method are provided to guarantee a generality about an arbitrary receiver using a continuous wave signal unrelated with a modulated signal. CONSTITUTION: A point of symmetry extracting unit(110) extracts an I/Q channel average trace of the continuous wave signal by receiving a continuous wave signal. An error extracting unit(120) extracts a distortion of the continuous wave signal from the I/Q channel average trace extracted from the point of symmetry extracting unit. A compensation unit(130) compensates a mismatching generated between an I channel signal and a Q channel signal of the continuous wave signal using the distortion of the continuous wave signal. The compensation unit normalizes the I/Q channel average trace to a circular.
Abstract translation: 目的：提供I / Q不匹配补偿装置和方法，以保证使用与调制信号无关的连续波信号的任意接收机的通用性。 构成：对称提取单元（110）通过接收连续波信号来提取连续波信号的I / Q通道平均迹线。 误差提取单元（120）从对称提取单元提取的I / Q通道平均曲线提取连续波信号的失真。 补偿单元（130）使用连续波信号的失真来补偿在I信道信号和连续波信号的Q信道信号之间产生的失配。 补偿单元将I / Q通道平均轨迹归一化为圆形。
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公开(公告)号：KR1020100028938A
公开(公告)日：2010-03-15
申请号：KR1020080087904
申请日：2008-09-05
Applicant: 한국전자통신연구원
CPC classification number: H03F1/26 , H03F1/565 , H03F3/195 , H03F2200/222 , H03F2200/294 , H03F2200/36 , H03F2200/451
Abstract: PURPOSE: A broadband low noise amplifier is provided to obtain high single end-differential property by changing a single signal into a differential signal. CONSTITUTION: A source-degenerated common source amplifier is provided to output a first signal with an opposite phase to an input signal by amplifying the input signal. A common gate amplifier is connected in parallel to the source-degenerated common source amplifier. The common gate amplifier outputs a second signal with the same phase as the input signal by amplifying the input signal. A matching frequency band determining unit separates an input terminal of the common gate amplifier and the source-degenerated common source amplifier. The matching frequency band determining unit is comprised of the first impedance(13) and the second impedance(14).
Abstract translation: 目的：提供宽带低噪声放大器，通过将单个信号变为差分信号来获得高单端差分特性。 构成：提供源极退化的公共源放大器，通过放大输入信号来输出具有与输入信号相反的相位的第一信号。 公共栅极放大器与源极退化的公共源放大器并联连接。 公共门放大器通过放大输入信号输出与输入信号相同相位的第二信号。 匹配频带确定单元分离公共栅极放大器和源极退化的共源放大器的输入端。 匹配频带确定单元包括第一阻抗（13）和第二阻抗（14）。
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公开(公告)号：KR100942698B1
公开(公告)日：2010-02-16
申请号：KR1020070126841
申请日：2007-12-07
Applicant: 한국전자통신연구원
IPC: H01L21/3205 , H01L21/28 , H01L21/768
Abstract: 본 발명은 다층의 금속 배선 제조 방법에 관한 것으로서, 다층의 감광막을 이용한 리소그라피 공정과, 감광막과 절연막의 식각선택비를 이용하여 절연막 위에 다층의 금속 배선을 형성함으로써, 비아 홀(Via-Hole)과 배선 금속 증착을 위한 리소그라피 공정을 별도로 진행하지 않고, 한 번의 리소그라피 공정으로 진행할 수 있으며, 한 번의 노광을 통해 패턴이 형성됨으로써 오 정렬의 가능성을 줄일 수 있으며, 보다 간단하고, 안정적으로 다층의 금속 배선을 제작할 수 있다.
반도체 기판, 다층의 금속 배선, 다층의 감광막, 오믹금속층, 절연막, 감광막 패턴, 식각 공정, 리프트 오프 공정, 식각마스크.-
公开(公告)号：KR1020090058730A
公开(公告)日：2009-06-10
申请号：KR1020070125466
申请日：2007-12-05
Applicant: 한국전자통신연구원
IPC: H01L29/78
CPC classification number: H01L29/778 , H01L29/20 , H01L29/42316 , H01L29/66462 , H01L21/28114
Abstract: A semiconductor device with a T-type gate electrode and a manufacturing method thereof are provided to improve a characteristic of high frequency and to stabilize the device by forming a protection layer in a side of a support part of the T-type gate electrode. A source electrode and a drain electrode are formed in an upper part of a substrate(201). A T-type gate electrode(211) is formed in the upper part of the substrate. The T-type gate electrode has a support part and a head part with a regular area. The support part is in contact with the substrate. The head part is integrated with the support part. A first protection layer(203) is formed in the side of the support part of the T-type gate electrode. A second protection layer(208) is formed in the side of the source and drain electrodes and the first protection layer.
Abstract translation: 提供具有T型栅电极的半导体器件及其制造方法，以通过在T型栅电极的支撑部分的侧面形成保护层来提高高频特性并稳定器件。 源电极和漏电极形成在衬底（201）的上部。 在基板的上部形成有T型栅电极（211）。 T型栅极具有支撑部和具有规则面积的头部。 支撑部与基板接触。 头部与支撑部分集成。 第一保护层（203）形成在T型栅电极的支撑部分的侧面。 第二保护层（208）形成在源极和漏极以及第一保护层的侧面。
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公开(公告)号：KR1020090054784A
公开(公告)日：2009-06-01
申请号：KR1020070121639
申请日：2007-11-27
Applicant: 한국전자통신연구원
IPC: H03B5/12
CPC classification number: H03B5/1231 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1253
Abstract: A capacitive-degeneration double cross coupled voltage controlled oscillator is provided to reduce a phase noise by reducing the input capacitance. A main cross coupled oscillator(321) includes an oscillator transistor pair cross coupled with a first output node and a second output node of a resonator and performs an oscillation operation. A positive feedback transistor pair is cross coupled in the firs and second output node of the resonator and the transistor pair of the main cross coupled oscillator. The main cross coupled oscillator includes a first transistor, a second transistor, and a second current source. The bases of the first and second transistors are connected to the first and second output node respectively. The collector is cross coupled with the base. The second current source is connected to the emitters of the first and second transistors. An auxiliary cross coupled oscillator(322) includes a positive feedback transistor pair and a degeneration capacitance and increase the negative resistance of the main cross coupled oscillator.
Abstract translation: 提供电容变性双交叉耦合压控振荡器，通过减小输入电容来降低相位噪声。 主交叉耦合振荡器（321）包括与谐振器的第一输出节点和第二输出节点交叉耦合的振荡器晶体管对，并执行振荡操作。 正反馈晶体管对在谐振器的第一和第二输出节点和主交叉耦合振荡器的晶体管对中交叉耦合。 主交叉耦合振荡器包括第一晶体管，第二晶体管和第二电流源。 第一和第二晶体管的基极分别连接到第一和第二输出节点。 收集器与基座交叉耦合。 第二电流源连接到第一和第二晶体管的发射极。 辅助交叉耦合振荡器（322）包括正反馈晶体管对和退化电容，并增加主交叉耦合振荡器的负电阻。
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Patent Agency Ranking
公开(公告)号：KR1020080052301A
公开(公告)日：2008-06-11
申请号：KR1020070086662
申请日：2007-08-28
Applicant: 한국전자통신연구원
Abstract: A sub harmonic mixer is provided to improve an isolation characteristic of a radio frequency signal and a two times local oscillator at a radio frequency input terminal by inserting a circuit having a phase difference of 180 degrees into a local oscillator terminal and a radio frequency terminal. A sub harmonic mixer includes a mixer core unit(110), a power unit(VCC), a radio frequency port(RF port), a local oscillation port(LO port), a first phase delay circuit(120), and a second phase delay circuit(122). The mixer core unit has first and second transistors which perform a switching operation by a local oscillation signal and a radio frequency signal. The power unit applies a bias for maximizing non-linearity of the transistors included in the mixer core unit. The radio frequency port applies a radio frequency to the mixer core unit. The local oscillation port applies a local signal to the mixer core unit. The first phase delay circuit and the second phase delay circuit have a phase difference of 180 degrees of the radio frequency applied to the first and second transistors.
Abstract translation: 提供了一种副谐波混频器，通过将具有180度相位差的电路插入本地振荡器端子和射频终端来提高射频信号的隔离特性和射频输入端的两倍的本地振荡器。 子谐波混频器包括混频器核心单元（110），功率单元（VCC），射频端口（RF端口），本地振荡端口（LO端口），第一相位延迟电路（120）和第二 相位延迟电路（122）。 混频器核心单元具有通过本地振荡信号和射频信号执行开关操作的第一和第二晶体管。 功率单元施加用于最大化混频器核心单元中包括的晶体管的非线性的偏置。 射频端口向混频器核心单元施加射频。 本地振荡端口将本地信号施加到混频器核心单元。 第一相位延迟电路和第二相位延迟电路具有施加到第一和第二晶体管的射频的180度的相位差。
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公开(公告)号：KR1020080052238A
公开(公告)日：2008-06-11
申请号：KR1020070057596
申请日：2007-06-13
Applicant: 한국전자통신연구원
IPC: H03B5/12
CPC classification number: H03B5/1231 , H03B5/1212 , H03B27/00 , H03B2200/0008 , H03B2200/0078 , H03B2200/009
Abstract: A colpitts quadrature voltage controlled oscillator is provided to implement a miniaturization and improve a phase noise characteristic by acquiring a correct quadrature-phase signal without using a coupling transistor, and a coupling transformer. A colpitts quadrature voltage controlled oscillator includes first and second LC resonators(201a,201b), first and second differential oscillating units(202,203), a feedback capacitor(Cf), and a degeneration capacitor(Ce). The first and second LC resonators are coupled to a voltage power and generate a resonant frequency. The first and second differential oscillating units have first and second oscillation transistors output an oscillation signal by oscillating the generated resonant frequency. The feedback capacitor and the degeneration capacitor are coupled between the first and second oscillation transistors. First and second output nodes of the first LC resonator are coupled to a base of the first and second oscillation transistors, respectively. Third and fourth output nodes of the second LC resonator are coupled to a collector of the first and second oscillators. Quadrature phase signals having a phase difference of 90 degrees from the base and the collector of the first and second oscillation transistors are generated.
Abstract translation: 提供了一种正交压控振荡器，以实现小型化，并且通过在不使用耦合晶体管的情况下获取正确的正交相位信号和耦合变压器来提高相位噪声特性。 串联正交压控振荡器包括第一和第二LC谐振器（201a，201b），第一和第二差分振荡单元（202,203），反馈电容器（Cf）和退化电容器（Ce）。 第一和第二LC谐振器耦合到电压功率并产生谐振频率。 第一和第二差分振荡单元具有通过振荡产生的谐振频率而输出振荡信号的第一和第二振荡晶体管。 反馈电容器和退化电容器耦合在第一和第二振荡晶体管之间。 第一LC谐振器的第一和第二输出节点分别耦合到第一和第二振荡晶体管的基极。 第二LC谐振器的第三和第四输出节点耦合到第一和第二振荡器的集电极。 产生具有与第一和第二振荡晶体管的基极和集电极90度相位差的正交相位信号。
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公开(公告)号：KR1020080052232A
公开(公告)日：2008-06-11
申请号：KR1020070057085
申请日：2007-06-12
Applicant: 한국전자통신연구원
IPC: H01L33/48 , H01L27/14 , H01L31/0224
Abstract: An optical interconnection electronic device is provided to eliminate the necessity of a serializing unit, a paralleling unit, a modulating unit and the like by using a multiple channel fiber. A first silicon chip(301) is formed on a silicon substrate(300). A light emitting unit(302) receives an electrical signal from the first silicon chip and outputs a multiple light signal, formed on the silicon substrate to be connected to the first silicon chip. A light detecting unit(304) detects the multiple light signal and converts the detected multiple light signal into a multiple electrical signal, formed on the silicon substrate to be connected to the light emitting unit. A second silicon chip(305) receives the multiple electrical signal outputted from the light emitting unit, formed on the silicon substrate to be connected to the light detecting unit. The light emitting unit is connected to the light detecting unit by a multiple channel fiber(307). The light emitting unit can include a silicon-germanium intermediate layer and a III-V group compound semiconductor layer formed on the silicon-germanium intermediate layer.
Abstract translation: 提供光互连电子器件，以通过使用多通道光纤来消除串行化单元，并联单元，调制单元等的必要性。 在硅衬底（300）上形成第一硅芯片（301）。 发光单元（302）从第一硅芯片接收电信号，并输出形成在硅衬底上以连接到第一硅芯片的多光信号。 光检测单元（304）检测多个光信号，并将检测到的多个光信号转换成形成在硅基板上以连接到发光单元的多个电信号。 第二硅芯片（305）接收从与发光单元连接的硅基板上形成的发光单元输出的多个电信号。 发光单元通过多通道光纤（307）连接到光检测单元。 发光单元可以包括硅 - 锗中间层和形成在硅 - 锗中间层上的III-V族化合物半导体层。
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公开(公告)号：KR100727814B1
公开(公告)日：2007-06-13
申请号：KR1020060098890
申请日：2006-10-11
Applicant: 한국전자통신연구원
Abstract: An automatic gain controller and a wireless receiver having the same are provided to be advantageous in consuming power because a block like RSSI(Received Signal Strength Indicator) is not necessary in order to detect power of an RF signals. An automatic gain controller comprises an analog gain controller(300) and a digital gain controller(200). The analog gain controller generates gain control voltage for performing an analog feedback control of an amplification value with a minute range for an external amplifying unit. The digital gain controller receives the gain control voltage and determines an amplification value with a rough range for the external amplifying unit. The digital gain controller includes an acyclic up/down counter(206) and power comparers(202,203). The acyclic up/down counter(206) generates a digital code. The power comparers(202,203) compares the gain control voltage with reference voltage, and determines a polarity of the acyclic up/down counter.
Abstract translation: 自动增益控制器和具有该自动增益控制器的无线接收器被提供为在消耗功率方面是有利的，因为像RSSI（接收信号强度指示符）这样的块不是必需的，以便检测RF信号的功率。 自动增益控制器包括模拟增益控制器（300）和数字增益控制器（200）。 模拟增益控制器产生增益控制电压，用于对外部放大单元执行具有微小范围的放大值的模拟反馈控制。 数字增益控制器接收增益控制电压并为外部放大单元确定具有粗略范围的放大值。 数字增益控制器包括非循环加/减计数器（206）和功率比较器（202,203）。 非循环递增/递减计数器（206）生成数字码。 功率比较器（202,203）将增益控制电压与参考电压进行比较，并确定非周期增/减计数器的极性。
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公开(公告)号：KR100716540B1
公开(公告)日：2007-05-09
申请号：KR1020060056690
申请日：2006-06-23
Applicant: 한국전자통신연구원
Abstract: 본 발명은 양의 이득과 음의 이득을 가진 2개의 신호 경로를 선택하기 위한 제어신호에서 부적합한 시간지연이 있을 경우에 발생할 수 있는 비선형 자동이득제어 동작을 방지할 수 있는 디지털 자동이득제어 장치를 개시한다. 본 발명의 디지털 자동이득제어 장치는 입력신호 세기를 검출하기 위한 신호강도표시 블록와, 신호강도표시 블록의 출력을 경로전환의 기준이 되는 임의의 기준레벨과 비교하여 경로전환을 위한 제어신호를 생성하는 비교기, 그리고 비교기의 출력을 이용하여 양의 이득과 음의 이득의 신호 경로들 중 어느 하나를 선택하기 위한 스위치 동작에 필요한 리타이밍된 제어신호를 생성하는 리타이밍부를 포함한다.
자동이득제어, RF AGC 장치, RF 증폭기, 제어신호, 비교기, 스위치Abstract translation: 本发明公开了两个信号，如果有在控制信号中不恰当的延迟，用于选择一种能够防止与增益的量和的负增益在控制装置中可能出现的非线性的自动增益控制操作的一个数字自动增益路径 的。 本发明的相比，信号强度指示符beulrokwa的输出，用于检测输入信号的强度，信号强度指示器块用任意的参考电平的数字自动增益控制装置，即用于路线用于产生控制信号，用于路由切换开关的基础 比较器和重新定时单元，用于生成开关操作所需的重定时控制信号，以使用比较器的输出来选择正增益或负增益信号路径。
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