公开(公告)号：DE68928860T2

公开(公告)日：1999-05-12

申请号：DE68928860

申请日：1989-09-28

Applicant: CANON KK

Inventor： OHTA HIROHISA ,  OZAWA KUNITAKA ,  KAWAKAMI EIGO ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: An exposure method wherein a mask (8) and a semiconductor wafer (1) are disposed opposed to each other in a close proximity relation in respect to Z-axis direction and wherein a pattern of the mask is printed on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy, is disclosed. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment in respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are relatively moved closer to each other in the Z-axis direction and the alignment and exposure is performed. This ensures that the alignment and exposure is effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.

公开(公告)号：DE69032988D1

公开(公告)日：1999-04-15

申请号：DE69032988

申请日：1990-08-29

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  UDA KOJI ,  OZAWA KUNITAKA ,  UZAWA SHUNICHI ,  EBINUMA RYUICHI ,  KARIYA TAKAO

IPC: G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  H01L21/68 ,  H01L21/00

Abstract: An alignment system usable in an exposure apparatus for printing a pattern of a mask on a wafer, for aligning the mask and the wafer, is disclosed. The system includes a plurality of position detecting devices; a plurality of driving stages corresponding to the position detecting devices, respectively, each driving stage being adapted to move corresponding one of the position detecting devices two-dimensionally along a plane which is substantially opposed to the mask; a plurality of contacts corresponding to the position detecting devices, respectively, each contact being provided at an end portion of corresponding one of the position detecting devices, along the plane and facing to the pattern side; a detecting device for detecting mutual approach of the position detecting devices through at least one of contacts; and a control device for controlling movement of at least one of the driving stages in accordance with the detection by the detecting device.

公开(公告)号：DE68928860D1

公开(公告)日：1999-01-07

申请号：DE68928860

申请日：1989-09-28

Applicant: CANON KK

Inventor： OHTA HIROHISA ,  OZAWA KUNITAKA ,  KAWAKAMI EIGO ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

Abstract: An exposure method wherein a mask (8) and a semiconductor wafer (1) are disposed opposed to each other in a close proximity relation in respect to Z-axis direction and wherein a pattern of the mask is printed on each of different shot areas of the semiconductor wafer in a step-and-repeat manner, with a predetermined exposure energy, is disclosed. In this method, the spacing between the mask and the wafer for the paralleling of them is made larger than the spacing therebetween as assumed at the time of mask-to-wafer alignment in respect to X-Y plane or the spacing between the mask and the wafer as assumed at the time of exposure of the wafer to the mask. After the paralleling of the mask and the wafer, the mask and the wafer are relatively moved closer to each other in the Z-axis direction and the alignment and exposure is performed. This ensures that the alignment and exposure is effected at an optimum spacing while, on the other hand, contact of the mask and the wafer at the time of paralleling is precluded.

公开(公告)号：DE69128207T2

公开(公告)日：1998-04-16

申请号：DE69128207

申请日：1991-03-12

Applicant: CANON KK

Inventor： IWAMOTO KAZUNORI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI ,  EBINUMA RYUICHI

IPC: G03F7/20 ,  G21K1/02 ,  H01L21/027

Abstract: A method of manufacture of semiconductor devices wherein a radiation beam is projected from a synchrotron orbit radiation source into an ambience maintained substantially at a vacuum, wherein a first beam which is a portion of the radiation beam is directed to a wafer through a window effective to isolate the ambience to thereby print a circuit pattern on an X-ray sensitive layer on the wafer with the first beam, wherein an opening is formed at least in a portion of a support for supporting the window, wherein a second beam which is another portion of the radiation beam is extracted through the opening, and wherein, by using the second beam, any deviation of the first beam with respect to the wafer is detected and corrected.

公开(公告)号：DE69128655D1

公开(公告)日：1998-02-19

申请号：DE69128655

申请日：1991-02-28

Applicant: CANON KK

Inventor： EBINUMA RYUICHI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  SUDA SHIGEYUKI ,  UZAWA SHUNICHI ,  HASEGAWA TAKAYUKI

IPC: G03F7/20 ,  G03F9/00 ,  G03B27/53

Abstract: An exposure apparatus for transferring a pattern of an original (1) onto a workpiece (2) by using first light, includes a blocking member (4) for defining a rectangular exposure region on the workpiece. The blocking member (4) has a function for blocking the first light, wherein, through the exposure region defined by the blocking member (4), exposure for the pattern transfer can be effected. A detecting device (6) detects a positional deviation between the original (1) and the workpiece (2), by using second light different from the first light, wherein the blocking member (4) has a portion for transmitting the second light such that the detecting device (6) can detect the positional deviation with the second light passed through that portion of the blocking member.

公开(公告)号：DE68928288D1

公开(公告)日：1997-10-09

申请号：DE68928288

申请日：1989-05-09

Applicant: CANON KK

Inventor： KAWAKAMI EIGO ,  YOSHII MINORU ,  UZAWA SHUNICHI

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

公开(公告)号：DE69126738D1

公开(公告)日：1997-08-14

申请号：DE69126738

申请日：1991-04-04

Applicant: CANON KK

Inventor： FUJIOKA HIDEHIKO ,  MIYACHI TAKESHI ,  CHIBA YUJI ,  MIZUSAWA NOBUTOSHI ,  KARIYA TAKAO ,  UZAWA SHUNICHI ,  FUKUDA YASUAKI

IPC: G03F1/22 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30 ,  G03F1/14

公开(公告)号：DE69030848D1

公开(公告)日：1997-07-10

申请号：DE69030848

申请日：1990-07-31

Applicant: CANON KK

Inventor： AMEMIYA MITSUAKI ,  SAKAMOTO EIJI ,  UDA KOJI ,  OZAWA KUNITAKA ,  IWAMOTO KAZUNORI ,  UZAWA SHUNICHI ,  MARUMO MITSUJI

IPC: H01L21/30 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027 ,  H01L21/687

公开(公告)号：DE69029300D1

公开(公告)日：1997-01-16

申请号：DE69029300

申请日：1990-08-30

Applicant: CANON KK

Inventor： WATANABE YUTAKA ,  UNO SHINICHIRO ,  EBINUMA RYUICHI ,  MIZUSAWA NOBUTOSHI ,  UZAWA SHUNICHI

IPC: G21K5/02 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: An exposure apparatus for exposing a substrate with X-rays, is disclosed. The apparatus includes a radiation source (1) for providing X-rays; and a convex mirror (2) for reflecting the X-rays from the radiation source toward the substrate to expose a zone (3) of the substrate with the X-rays; wherein the convex mirror and the substrate are so interrelated that a peak position of intensity distribution of the X-rays upon the zone is deviated from the center of the zone.

公开(公告)号：DE68927430D1

公开(公告)日：1996-12-12

申请号：DE68927430

申请日：1989-08-31

Applicant: CANON KK

Inventor： KUROSAWA HIROSHI ,  AMEMIYA MITSUAKI ,  TERASHIMA SHIGERU ,  UDA KOJI ,  SHIMODA ISAMU ,  UZAWA SHUNICHI

IPC: G03F7/20

Abstract: An exposure apparatus usable with synchrotron radiation source (201) wherein the synchrotron radiation (202,204) is generated by electron injection (210) into a ring (201). The exposure apparatus is to transfer a semiconductor element pattern of a mask (208) onto a semiconductor wafer (209) by the synchrotron radiation. The apparatus includes a shutter (207) for controlling the exposure of the wafer (209). The shutter (207) controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined (206,211,216) in response to the electron injection (210), and thereafter, the illuminance distribution is corrected (216,215,213,207) in a predetermined manner. By this, the illuminance distribution data for controlling (213,215) the shutter (207) always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer (209) are exposed with high precision.