公开(公告)号：DE10001871A1

公开(公告)日：2001-08-02

申请号：DE10001871

申请日：2000-01-18

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  WERNER WOLFGANG

IPC: H01L21/22 ,  H01L21/331 ,  H01L29/08 ,  H01L29/167 ,  H01L29/32 ,  H01L29/78 ,  H01L21/336 ,  H01L29/739

Abstract: Process for the production of a controllable semiconductor logic element, comprises supplying a semiconductor body (1:2) with a first conduction zone (10, 12; 14, 16; 18) of a first n-type conductor, a second conduction zone (22; 24; 26) of a second p-type conductor, and a nonconducting area (30; 32; 34) arranged between the first and second conduit zone (10-18; 22-26) and bringing the load of the first and second conducting layers (60; 62; 64) into the non-conducting area (30; 32; 34). The product is also new.

公开(公告)号：DE19913375B4

公开(公告)日：2009-03-26

申请号：DE19913375

申请日：1999-03-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  WERNER WOLFGANG

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/10 ,  H01L29/78

Abstract: MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structureA MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction.Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.

公开(公告)号：DE50014606D1

公开(公告)日：2007-10-11

申请号：DE50014606

申请日：2000-02-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG

IPC: H01L21/761 ,  H01L29/739 ,  H01L21/8238 ,  H01L27/04 ,  H01L27/08 ,  H01L27/092 ,  H01L29/78

Abstract: The IGBT (insulated gate bipolar transistor) has a weakly doped drift zone of a first conductivity formed in a weakly doped semiconductor substrate of the same conductivity. A highly doped first well zone of the first conductivity and a highly doped second well zone of a second conductivity are arranged between the drift zone and the semiconductor substrate.

公开(公告)号：AT352873T

公开(公告)日：2007-02-15

申请号：AT00934909

申请日：2000-04-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  WERNER WOLFGANG

IPC: H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/739 ,  H01L29/78 ,  H01L21/331

公开(公告)号：DE10005772B4

公开(公告)日：2006-11-30

申请号：DE10005772

申请日：2000-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  TIHANYI JENOE

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08

公开(公告)号：DE102004041192A1

公开(公告)日：2006-03-02

申请号：DE102004041192

申请日：2004-08-25

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  WERNER WOLFGANG

IPC: H01L21/761

Abstract: Production of an insulation in a semiconductor material region (20) comprises forming a semiconductor material region with a base doping of first conductivity and having a surface region (20a) and a lower side (20b), forming a material region (30) for the insulation on a defined position on the surface region of the semiconductor region, heating the structure obtained and forming a doping region of second conductivity directly below the material region of the material for the insulation.

公开(公告)号：DE10239310B4

公开(公告)日：2005-11-03

申请号：DE10239310

申请日：2002-08-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FISCHER HERMANN ,  WERNER WOLFGANG ,  MAYER THORSTEN ,  KANERT WERNER ,  FUGGER JOSEF

IPC: H01L29/417 ,  H01L29/78 ,  H01L21/28 ,  H01L21/336

公开(公告)号：DE10005774B4

公开(公告)日：2005-09-29

申请号：DE10005774

申请日：2000-02-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WERNER WOLFGANG ,  SOMMER PETER ,  KANERT WERNER

IPC: H01L29/78 ,  H01L29/872

Abstract: DMOS cell consists of DMOS transistor (11) and Schottky diode (12) which lie parallel to the source-drain path of the transistor. The source zone (6) of the transistor is in contact with a source-contact layer (7, 14) via a contact hole (8) in a gate insulating layer (9). The Schottky diode is formed in the contact hole between the source-contact layer and the drain zone (1, 2) of the transistor. Preferred Features: The source-contact layer is provided with a Schottky metallization (13) made from tungsten silicide, tantalum silicide, platinum silicide or molybdenum silicide, and has a plug (14) made from conducting polycrystalline silicon.

公开(公告)号：DE102004002908A1

公开(公告)日：2005-09-01

申请号：DE102004002908

申请日：2004-01-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHMIDT GERHARD ,  ZELSACHER RUDOLF ,  BAER MICHAEL ,  WERNER WOLFGANG ,  WINKLER BERNHARD

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/58 ,  H01L29/84

Abstract: A semiconductor component ( 1 ) includes a substrate, an active area ( 2 ), formed in/on the substrate, and a passivation layer ( 5 ) which is provided at least above part of the active area ( 2 ). The passivation layer ( 5 ) at least partially comprises amorphous, hydrogen-doped carbon. The provision of a passivation layer of this type allows the semiconductor component ( 1 ) to be effectively protected against environmental influences.

公开(公告)号：DE10357796A1

公开(公告)日：2005-07-07

申请号：DE10357796

申请日：2003-12-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  WERNER WOLFGANG

IPC: H01L29/167 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861 ,  H01L29/872 ,  H01L29/70

Abstract: The n-type semiconductor body has a surface. In the body, a first region includes p-type charge carriers. A second region within the first includes p-type charge carriers. To the surface of the semiconductor body, an electroconductive layer is applied. A novel feature is the number of charge carriers in the second region, which is dependent on the operational state. (conductivity types, p and n, may be reversed.) : An independent claim is included for the corresponding method of manufacture.