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103 records (took 0.03 seconds)

    72.
    发明专利
    未知

    公开(公告)号：DE102008022942A1

    公开(公告)日：2009-11-12

    申请号：DE102008022942

    申请日：2008-05-09

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： RODE PATRICK ,  HOEPPEL LUTZ ,  ENGL KARL ,  ALBRECHT TONY

    IPC: H01L33/00 ,  H01L33/38

    Abstract: A radiation-emitting semiconductor chip (1) is provided, which comprises a carrier (5), a semiconductor body (2) with a semiconductor layer sequence, a first contact (35) and a second contact (36). The semiconductor layer sequence comprises an active region (20) provided for generating radiation, which is arranged between a first semiconductor layer (21) and a second semiconductor layer (22). The carrier (5) comprises a major surface (51) facing the semiconductor body (2). The first semiconductor layer (21) is arranged on the side of the active region (20) facing the major surface (51) of the carrier (5) and is electrically contactable by means of the first contact (35). The second semiconductor layer (22) is electrically contactable by means of the second contact (36). A protection diode (4) is formed in a current path extending between the first contact (35) and the second contact (36) through the carrier (5).

    73.
    发明专利
    未知

    公开(公告)号：DE10321246B4

    公开(公告)日：2009-10-22

    申请号：DE10321246

    申请日：2003-05-12

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SCHMID WOLFGANG ,  BRICK PETER ,  ALBRECHT TONY ,  LINDER NORBERT

    IPC: H01S5/34 ,  H01S5/026 ,  H01S5/04 ,  H01S5/10 ,  H01S5/14 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/40

    Abstract: Semiconductor laser has body (1) with periodical system of recesses (2), or periodical system of semiconductor regions. Radiation, generated by semiconductor laser cannot propagate within periodical system and laser resonator (3) is influenced in lateral direction by periodical system.Optically pumped semiconductor appliance comprises vertical emitter (13), containing quantum dot structure (7) and is pumped by one or more lasers. Preferably resonator has angled or curved axis. Independent claims are included for optically pumped semiconductor appliance.

    74.
    发明专利
    未知

    公开(公告)号：DE502005006760D1

    公开(公告)日：2009-04-16

    申请号：DE502005006760

    申请日：2005-09-20

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： ALBRECHT TONY ,  LUTGEN STEPHAN ,  REILL WOLFGANG ,  SCHWARZ THOMAS ,  STEEGMUELLER ULRICH

    IPC: H01S5/026 ,  H01S5/02 ,  H01S5/04 ,  H01S5/183

    Abstract: A surface emitting semiconductor laser device comprising at least one surface emitting semiconductor laser (21) having a vertical emitter (1) and at least one pump radiation source (2), which are monolithically integrated alongside one another onto a common substrate (13), is described. The semiconductor laser device additionally has a heat-conducting element (18), which is in thermal contact with the semiconductor laser (21) and has a mounting area provided for mounting on a carrier (27). Methods for producing such a surface emitting semiconductor laser device are furthermore described.

    75.
    发明专利
    未知

    公开(公告)号：DE102006024220A1

    公开(公告)日：2007-10-18

    申请号：DE102006024220

    申请日：2006-05-23

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： LUTGEN STEPHAN ,  ALBRECHT TONY ,  BRICK PETER

    IPC: H01S5/04 ,  H01S5/024 ,  H01S5/14 ,  H01S5/183 ,  H01S5/20

    Abstract: An optoelectronic semiconductor component has a semiconductor body (1) comprising a surface emitting vertical emitter region (2) comprising a vertical emitter layer (3), at least one pump source (4) provided for optically pumping the vertical emitter layer (3), and a radiation passage area (26) through which electromagnetic radiation (31) generated in the vertical emitter layer leaves the semiconductor body (1), wherein the pump source (4) and the vertical emitter layer (3) are at a distance from one another in a vertical direction.

    79.
    发明专利
    未知

    公开(公告)号：DE10313609B4

    公开(公告)日：2005-07-14

    申请号：DE10313609

    申请日：2003-03-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： PHILIPPENS MARC ,  PLAINE GLENN-YVES ,  ALBRECHT TONY ,  BRICK PETER

    IPC: H01S5/06 ,  H01S5/10 ,  H01S5/18 ,  H01S5/183 ,  H01S5/187

    Abstract: A semiconductor laser, contains at least one absorbing layer ( 8 ) in its laser resonator, said absorbing layer reducing the transmission T Res of the laser radiation ( 10 ) in the laser resonator for the purpose of decreasing the sensitivity of the semiconductor laser to disturbances created by radiation ( 9 ) fed back into the laser resonator. This reduces fluctuations in the output power due to fed-back radiation ( 9 ).

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