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    84.
    发明专利
    未知

    公开(公告)号：DE19940581C2

    公开(公告)日：2001-07-26

    申请号：DE19940581

    申请日：1999-08-26

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  KAPELS HERGEN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

    IPC: B81B3/00 ,  B81B7/02 ,  H01L27/06 ,  H01L21/822 ,  H01L21/8232 ,  B81C1/00

    Abstract: The manufacturing method has at least one electronic component (7) formed in the surface of a semiconductor body (1), before forming a recess in the surface of the latter, by selective removal of semiconductor material and formation of a layer (10) in this recess, which is structured to provide the micromechanical sensor component. The electronic component can be covered by a protective layer (9) before formation of the recess, with the layer provided in the recess formed from poly-silicon.

    86.
    发明专利
    未知

    公开(公告)号：DE19940581A1

    公开(公告)日：2001-04-19

    申请号：DE19940581

    申请日：1999-08-26

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  KAPELS HERGEN ,  MECKES ANDREAS ,  OPPERMANN KLAUS-GUENTER

    IPC: B81B3/00 ,  B81B7/02 ,  H01L27/06 ,  H01L21/822 ,  H01L21/8232 ,  B81C1/00

    Abstract: The manufacturing method has at least one electronic component (7) formed in the surface of a semiconductor body (1), before forming a recess in the surface of the latter, by selective removal of semiconductor material and formation of a layer (10) in this recess, which is structured to provide the micromechanical sensor component. The electronic component can be covered by a protective layer (9) before formation of the recess, with the layer provided in the recess formed from poly-silicon.

    87.
    发明专利
    未知

    公开(公告)号：DE19947081A1

    公开(公告)日：2001-04-05

    申请号：DE19947081

    申请日：1999-09-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  ELBRECHT LUEDER ,  MARKSTEINER STEPHAN ,  SAENGER ANNETTE ,  TIMME HANS-JOERG

    IPC: A61B8/00 ,  G10K11/20 ,  H03H3/02

    Abstract: The acoustic mirror is essentially comprised of at least one first insulating layer (Il'), a first metal layer (M1') arranged thereon, a second insulating layer arranged thereon (I2') and a second metal layer (M2') arranged thereon. An auxiliary layer (H') is produced on the first insulating layer (I1') whereby a recess (V') extending as far as the first insulating layer (I1') is created therein. The first metal layer (M1') is substantially deposited and removed by chemical/mechanical polishing until the parts of the first metal layer (M1') arranged outside the recess (V') are no longer present. The second metal layer (M2') is also produced in a recess (V') with the aid of chemical/mechanical polishing. More than two insulating layers (I1', I2') and two metal layers (M1', M2') can be provided. The first metal layer (M1') and the second metal layer (M2') can be produced in the same recess (V').

    89.
    发明专利
    未知

    公开(公告)号：DE50212077D1

    公开(公告)日：2008-05-21

    申请号：DE50212077

    申请日：2002-08-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： AIGNER ROBERT ,  MARKSTEINER STEPHAN ,  NESSLER WINFRIED

    IPC: H03H3/02 ,  H03H9/58 ,  H03H3/04 ,  H03H9/00 ,  H03H9/60

    Abstract: A piezoelectric component comprises at least two stacked crystal filters on a substrate. Each stacked crystal filter comprises a bottom electrode, a first piezoelectric layer arranged above the bottom electrode, a central electrode arranged above the first piezoelectric layer, a second piezoelectric layer arranged above the central electrode, and a top electrode arranged above the second piezoelectric layer. The bottom electrodes are directly connected to one another and the central electrodes are directly connected to one another.

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