公开(公告)号：KR100730168B1

公开(公告)日：2007-06-19

申请号：KR1020050111982

申请日：2005-11-22

Applicant: 삼성에스디아이 주식회사

Inventor： 박형빈 ,  손승현 ,  장상훈 ,  김기영 ,  김성수 ,  이호년

IPC: H01J11/34

CPC classification number: H01J61/305 ,  B82Y10/00 ,  H01J1/308 ,  H01J1/312 ,  H01J17/066 ,  H01J17/492

Abstract: 본 발명은 그 구조가 간단하고 간단한 제조공정으로 용이하게 제조될 수 있는 디스플레이 장치 및 이의 제조 방법을 제공하는 것을 목적으로 하며, 이 목적을 달성하기 위하여 본 발명은, 소정의 간격을 두고 이격되며 서로 마주보는 제1기판 및 제2기판과, 상기 제1기판 및 상기 제2기판과 함께 발광셀을 한정하는 격벽과, 상기 발광셀 내에 배치되는 애노드전극과, 상기 제1기판 및 상기 제2기판 중 어느 하나의 안쪽 면에 배치되는 도전성 실리콘층과, 적어도 일부가 상기 도전성 실리콘층에 배치되는 산화된 다공성 실리콘층과, 상기 발광셀 내에 배치되는 형광체층과, 상기 발광셀 내에 있는 가스를 포함하는 디스플레이 장치 및 이의 제조 방법을 제공한다.

公开(公告)号：KR100141588B1

公开(公告)日：1998-06-01

申请号：KR1019900005863

申请日：1990-04-26

Applicant: 코닌클리케 필립스 엔.브이.

Inventor： 아르투르마이에오이게네회베레츠 ,  니콜라스람베르트 ,  게라르두스게고리우스페트루스반로르콤

IPC: H01J1/30

CPC classification number: H01J1/308 ,  H01J3/027 ,  H01J29/485

Abstract: 내용없음

公开(公告)号：US11664182B2

公开(公告)日：2023-05-30

申请号：US17401823

申请日：2021-08-13

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ENERGY SYSTEMS & SOLUTIONS CORPORATION

Inventor： Shigeya Kimura ,  Hisashi Yoshida ,  Hisao Miyazaki ,  Hiroshi Tomita ,  Souichi Ueno ,  Takeshi Hoshi

IPC: H01J1/308 ,  H01J45/00

CPC classification number: H01J1/308 ,  H01J45/00

Abstract: According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0

公开(公告)号：US09953796B2

公开(公告)日：2018-04-24

申请号：US15098108

申请日：2016-04-13

Applicant: HRL Laboratories, LLC

Inventor： Biqin Huang ,  Christopher S. Roper ,  Tahir Hussain

IPC: H01J1/62 ,  H01J1/308 ,  H01J1/304 ,  H01J9/02 ,  H01J21/10

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J9/025 ,  H01J21/10

Abstract: A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.

公开(公告)号：US20180040449A1

公开(公告)日：2018-02-08

申请号：US15783394

申请日：2017-10-13

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood,, JR.

IPC: H01J19/24 ,  H01J9/02 ,  H01J9/18

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

公开(公告)号：US20170365507A1

公开(公告)日：2017-12-21

申请号：US15630597

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Damian Sojka ,  Andre Schmenn ,  Carsten Ahrens

IPC: H01L21/762 ,  H01L23/60 ,  H01L21/764 ,  H02H9/04 ,  H01L27/02 ,  H01L23/00

CPC classification number: H01L21/76289 ,  B81C1/00119 ,  B81C1/00214 ,  B81C1/00404 ,  B81C1/00484 ,  B81C1/00531 ,  B81C1/00539 ,  B81C1/00571 ,  B81C2201/0111 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0135 ,  B81C2201/016 ,  B81C2201/0198 ,  B81C2201/053 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/3048 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/283 ,  H01L21/31058 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/31144 ,  H01L21/764 ,  H01L23/60 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L27/0288 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/13091 ,  H01L2924/181 ,  H02H9/046 ,  H03K17/545 ,  H01L2924/00 ,  H01L2924/00012

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

公开(公告)号：US20170117112A1

公开(公告)日：2017-04-27

申请号：US15398537

申请日：2017-01-04

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J9/02 ,  H01J1/308

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

公开(公告)号：US09548180B2

公开(公告)日：2017-01-17

申请号：US14947773

申请日：2015-11-20

Applicant: Elwha LLC

Inventor： Max N. Mankin ,  Tony S. Pan

IPC: H01J1/308 ,  H01J9/02 ,  H01J1/304 ,  H01L31/0352 ,  H01L21/3065

CPC classification number: H01J9/025 ,  H01J1/3044 ,  H01J1/308 ,  H01J2201/30411 ,  H01J2201/30469 ,  H01J2201/30492 ,  H01J2209/0223 ,  H01J2237/06341 ,  H01L21/3065 ,  H01L31/0352

Abstract: Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.

Abstract translation: 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。

公开(公告)号：US09536696B1

公开(公告)日：2017-01-03

申请号：US15013699

申请日：2016-02-02

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01L29/06 ,  H01J1/304 ,  H01J1/308

CPC classification number: H01J19/24 ,  H01J1/304 ,  H01J1/3046 ,  H01J1/308 ,  H01J9/025 ,  H01J9/18 ,  H01J2209/0223

Abstract: A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.

Abstract translation: 水平多层结边缘场发射器包括由隔离层隔开的多个垂直堆叠的多层结构。 每个多层结构被配置为在结构内的两层之间的接合处产生二维电子气。 发射器还包括与多个垂直层叠的多层结构中的每一个的二维电子气相交的暴露表面，以形成多个有效的一维水平线电子发射源。

公开(公告)号：US09390878B2

公开(公告)日：2016-07-12

申请号：US14599986

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  De-Jie Li ,  Chun-Hai Zhang ,  Duan-Liang Zhou ,  Bing-Chu Du ,  Shou-Shan Fan

IPC: H01L29/06 ,  H01J1/308 ,  H01J1/312

CPC classification number: H01J1/308 ,  H01J1/312 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484 ,  Y10S977/939

Abstract: An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.

Abstract translation: 电子发射源包括以该顺序堆叠的第一电极，半导体层，绝缘层和第二电极，其中电子收集层夹在半导体层和绝缘层之间，电子收集层与 半导体层和绝缘层，并且电子收集层是用于收集电子的导电层。