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公开(公告)号：KR101150026B1
公开(公告)日：2012-05-30
申请号：KR1020090028426
申请日：2009-04-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/02
Abstract: 복수의 피처리체를 간격을 두고 적층 상태로 수납하여 감압 하에서 열처리를 실시하기 위한 반도체 처리용의 반응관은 전기 절연성이면서 내열성 재료로 일체적으로 형성된다. 반응관은, 하단부에 피처리체를 반응관에 대하여 로드 및 언로드하기 위한 로드 포트를 갖는 원통형의 측벽과, 측벽 상단부를 막고 또한 측벽의 축 방향과 직교하여 내면이 평면 형상으로 형성된 원형의 천장벽을 구비한다. 천장벽은 외면측의 주연 영역에 측벽을 따라 형성된 환 형상 홈을 갖는다.
피처리체, 감압, 반응관, 천장벽, 로드-
公开(公告)号：KR101116914B1
公开(公告)日：2012-03-09
申请号：KR1020080033541
申请日：2008-04-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/66 , H01L21/324
CPC classification number: G05D23/1935 , H01L21/67109 , H01L21/67248
Abstract: 열처리장치는반응용기와, 반응용기내에설치되어처리분위기를가열하는가열수단과, 처리분위기의온도를검출하는온도검출부와, 가열수단을 PID 제어에의해제어하는제어부를구비하고있다. 제어부는, 처리분위기를목표값까지승온할때의온도특성항목의예측변화량과 PID 상수의변경율을대응시켜작성된룰 테이블과, 온도검출부의온도검출값에기초하여온도프로파일을취득하여이 온도프로파일에기초하여온도특성항목의실측값과목표값의차분을구하는스텝과, 이차분이허용범위로부터벗어나고또한규정값보다도클 때에룰 테이블을참조하여, 차분에따른온도특성항목의예측변화량에대응하는변경율에의해 PID 상수를변경하여재설정하는스텝을차분이허용범위내로될 때까지반복해실시하는실행수단을갖고있다. 제어부는, 온도특성항목의실측변화량과 1회전의사이클에서예측한당해온도특성항목의예측변화량사이에차가있을때에는, 상기실측변화량에기초하여룰 테이블에서의 PID 상수와당해온도특성항목의예측변화량의대응관계를갱신하는갱신수단도갖고있다.
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公开(公告)号：KR1020090032007A
公开(公告)日：2009-03-31
申请号：KR1020080094070
申请日：2008-09-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67309 , C21D9/0068 , C23C16/56 , H01L21/67109
Abstract: A heat treatment method and heat treatment apparatus are provided to optimize the arrangement of the processed substrate in the treating furnace and to secure the uniformity of the processing of the substrates. The processed substrate(w) of the plural sheets is mounted in the substrate supporting unit(10). The substrate supporting unit is transferred within the thermal process furnace(3). In the thermal process, the processed substrates are processed. The interval(pa) between the surfaces of processed substrate are set up and to secure the treating uniformity. In processed substrates, the interval(pb) between the rear sides is narrow than interval between the surfaces.
Abstract translation: 提供一种热处理方法和热处理装置，以优化处理炉中处理过的衬底的布置，并确保衬底加工的均匀性。 多个片材的被处理基板（w）安装在基板支撑单元（10）中。 衬底支撑单元在热处理炉（3）内转移。 在热处理中，处理的基板被加工。 处理后的基板的表面之间的间隔（pa）被设定并确保处理均匀性。 在经处理的基板中，后侧之间的间隔（pb）比表面之间的间隔窄。
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公开(公告)号：KR100958766B1
公开(公告)日：2010-05-18
申请号：KR1020067014057
申请日：2005-08-24
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/31
CPC classification number: H01L21/324 , H01L21/67109
Abstract: 본 발명은 피처리체를 수용하는 처리 용기와, 상기 처리 용기의 주위를 둘러싸도록 마련되고, 상기 처리 용기를 가열하는 동시에 급속 냉각 기능을 갖는 주요 히터와, 상기 처리 용기의 상부에 있어서 굴곡 형성된 배기구부와, 상기 배기구부를 가열하기 위해 마련된 보조 히터와, 상기 주요 히터의 급속 냉각시에 상기 보조 히터를 상기 배기구부로부터 퇴피시키기 위한 이동 기구와, 상기 배기구부 주변의 분위기를 강제 배기하기 위한 강제 배기 기구를 구비한 것을 특징으로 하는 종형 열처리 장치이다.
처리 용기, 배기구부, 주요 히터, 보조 히터, 종형 열처리 장치-
公开(公告)号：KR1020090105870A
公开(公告)日：2009-10-07
申请号：KR1020090028426
申请日：2009-04-02
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324 , H01L21/02
CPC classification number: H01L21/67098 , H01L21/67017 , H01L21/67303
Abstract: PURPOSE: A reaction pipe and a heat processing apparatus for a semiconductor process are provided to perform a thermal treatment with a high uniformity. CONSTITUTION: A reaction pipe and a heat processing apparatus for a semiconductor process are composed of a reaction tube(3), a heater(22), a substrate holder, a gas supply system, and a gas exhaust system. The reaction tube performs a thermal treatment by receiving while receiving a plurality of targets at a certain interval, and a heater surrounds the reaction tube. A substrate holder maintains the target in the reaction tube, and the gas supply system supplies a process gas into the reaction tube.
Abstract translation: 目的：提供一种用于半导体工艺的反应管和热处理装置，以高均匀性进行热处理。 构成：用于半导体工艺的反应管和热处理装置由反应管（3），加热器（22），基板保持器，气体供应系统和排气系统组成。 反应管在一定间隔接收多个靶时进行热处理，加热器围绕反应管。 衬底保持器将反射管中的靶保持在反应管中，并且气体供给系统将工艺气体供应到反应管中。
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Patent Agency Ranking
公开(公告)号：KR1020080092861A
公开(公告)日：2008-10-16
申请号：KR1020080033541
申请日：2008-04-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/66 , H01L21/324
CPC classification number: G05D23/1935 , H01L21/67109 , H01L21/67248
Abstract: A heat treatment apparatus and auto-tuning method for a control constant, and a storage medium are provided to tune a PID constant by resetting the PID constant with reference to a temperature profile. A reaction chamber(2) contains a process atmosphere and a target. Heaters(41,42,43,44) are installed in the reaction chamber to heat the process atmosphere. Temperature detectors(TC1,TC2,TC3,TC4) detect the process atmosphere which is heated by the heaters. A controller(7) controls the heaters through a PID control. The controller includes a rule table, an execution unit, and an updating unit. The rule table is prepared by matching an estimated variation amount and a variation rate of a PID constant. The execution unit acquires a temperature profile based on temperature detection values from the temperature detector and repeats a process for obtaining a difference between a measured value and a target value based on the temperature profile and a process for resetting the PID constant a variation rate corresponding to the estimated variation amount, until the difference satisfies a permissible range.
Abstract translation: 提供一种用于控制常数的热处理装置和自动调谐方法以及存储介质，以通过参考温度曲线复位PID常数来调节PID常数。 反应室（2）包含处理气氛和目标物。 加热器（41,42,43,44）安装在反应室中以加热工艺气氛。 温度检测器（TC1，TC2，TC3，TC4）检测加热器加热的工艺气氛。 控制器（7）通过PID控制来控制加热器。 控制器包括规则表，执行单元和更新单元。 通过匹配PID常数的估计变化量和变化率来准备规则表。 执行单元基于来自温度检测器的温度检测值获取温度曲线，并且基于温度曲线重复获得测量值和目标值之间的差异的处理以及用于将PID常数复位的处理与对应于 估计的变化量，直到差异满足允许范围。
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公开(公告)号：KR1020070070085A
公开(公告)日：2007-07-03
申请号：KR1020060134461
申请日：2006-12-27
Applicant: 도쿄엘렉트론가부시키가이샤
Inventor： 이노우에히사시
IPC: H01L21/205
CPC classification number: C23C16/345 , C23C16/52
Abstract: A film formation apparatus, an operation method thereof and a memory medium for executing the method are provided to prevent the generation of particles due to attachment of a reaction container when a nitride silicon layer is formed on a substrate. A process gas is supplied into a reaction container(2) receiving plural substrates, and simultaneously, the reaction container is heated using a heater(51), thereby forming a silicon nitride layer on the substrate. A substrate holding support for holding the substrates with silicon nitride layer is withdrawn from the reaction container through an entrance of the reaction container. A substrate holding support for holding new substrates is introduced into the reaction container, and the entrance is closed and sealed.
Abstract translation: 提供了一种成膜装置，其操作方法和用于执行该方法的存储介质，以防止当在基板上形成氮化物硅层时由于反应容器的附着而产生颗粒。 将处理气体供给到容纳多个基板的反应容器（2）中，同时使用加热器（51）对反应容器进行加热，从而在基板上形成氮化硅层。 通过反应容器的入口从反应容器中取出用氮化硅层保持基板的基板保持支架。 将用于保持新基板的基板保持支撑件引入反应容器中，并且将入口封闭并密封。
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公开(公告)号：KR1020160113013A
公开(公告)日：2016-09-28
申请号：KR1020160031992
申请日：2016-03-17
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/677 , H01L21/60
CPC classification number: F27B5/04 , F16B2/02 , F27B17/0016 , F27B17/0025 , F27D3/0084 , F27D2003/0012 , F27D2003/0046 , H01L21/67109 , H01L21/67379 , H01L21/67389 , H01L21/6773 , H01L21/67742 , H01L21/67772 , H01L21/67775
Abstract: 본발명은 FOUP 등의기판수납용기로부터기판을취출하여기판반송영역에반입할때에필요한기판수납용기를고정하는클램프메커니컬에있어서, 파티클의비산을저감시킬수 있는클램프장치및 이것을이용한기판반입출장치, 및기판처리장치를제공하는것을목적으로한다. 클램프장치(100)는, 기판수납용기(C)의정면에마련된덮개(68)를개폐할때, 상기기판수납용기에상방으로부터접촉하여상기기판수납용기를미리정해진위치에고정가능한클램프부재(81)와, 상기클램프부재를구동시키는구동기구(86, 87)와, 상기구동기구를덮는케이싱(85)과, 상기케이싱과연통하는흡입구(91)를가지고, 상기케이싱의근린에마련된배기실(90)과, 상기배기실내에마련된팬(94)을갖는다.
Abstract translation: 本发明涉及一种夹持装置，使用该装置的基板输入/输出装置和基板处理装置，以便在从基板喷射基板时减少夹紧机械装置中的颗粒的散射以固定基板容纳容器 容纳容器如前开口统一荚（FOUP）并发送到基底承载区域。 本发明的夹紧装置（100）包括：夹紧构件（81），其构造成从上侧接触基板容纳容器（C），并将盖（68）固定到预定位置 ）设置在基板容纳容器（C）的前表面上; 构造成驱动所述夹紧构件的驱动机构（86,87）; 构造成覆盖所述驱动机构的壳体（85）; 排气室（90），设置在所述壳体附近并且包括构造成与所述壳体连通的吸入口（91） 以及设置在排气室内的风扇（94）。
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公开(公告)号：KR101133390B1
公开(公告)日：2012-04-24
申请号：KR1020080094070
申请日：2008-09-25
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/324
CPC classification number: H01L21/67309 , C21D9/0068 , C23C16/56 , H01L21/67109
Abstract: A substrate holder has two holder constituting bodies, each having a plurality of columns arranged on an imaginary circle, and substrate holding sections that hold circumferential portions of respective substrates. The holder constituting bodies hold the substrates so that either their front surfaces or their back surfaces face upward with a substrate having an upward facing front and a substrate having an upward facing rear being alternately arranged in a vertical direction. At least one of the holder constituting bodies moves in the vertical direction to change the positions of the holder constituting bodies relative to each other. A distance between a first pair of vertically adjacent substrates with their respective front surfaces facing each other is set to ensure treatment uniformity, and to be larger than a distance between a second pair of vertically adjacent substrates with their respective back surfaces facing each other.
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公开(公告)号：KR1020080027199A
公开(公告)日：2008-03-26
申请号：KR1020070096489
申请日：2007-09-21
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C8/10 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/67109
Abstract: An oxidation apparatus and method for processing a semiconductor are provided to optimize a flow rate of gas by using an optimum process condition. A process container(24) has a process region formed to receive a plurality of target substrates in a constant interval. A heater(90) is formed to heat the processing region. An exhaust system is formed to exhaust gas from the inside of the process region. An oxidation gas supply circuit is formed to supply oxidation gas to the process region. A deoxidation gas supply system is formed to supply deoxidation gas to the process region. The oxidation gas supply system includes an oxidation gas nozzle extended to a vertical length corresponding to the processing region. The oxidation gas nozzle includes a plurality of gas injection holes. The deoxidation gas supply system includes a plurality of deoxidation gas nozzles. Each of the deoxidation gas nozzles includes a gas injection hole.
Abstract translation: 提供用于处理半导体的氧化装置和方法，以通过使用最佳工艺条件来优化气体的流量。 处理容器（24）具有形成为以恒定间隔接收多个目标基板的处理区域。 形成加热器（90）以加热处理区域。 形成排气系统以从处理区域的内部排出气体。 形成氧化气体供给回路，向工序区域供给氧化气体。 形成脱氧气体供给系统，以向工艺区域提供脱氧气体。 氧化气体供给系统包括延伸到对应于处理区域的垂直长度的氧化气体喷嘴。 氧化气体喷嘴包括多个气体注入孔。 脱氧气体供给系统包括多个脱氧气体喷嘴。 每个脱氧气体喷嘴包括气体注入孔。
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