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公开(公告)号：KR1020080069036A
公开(公告)日：2008-07-25
申请号：KR1020070006621
申请日：2007-01-22
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L45/06 , G11C13/0004 , H01L45/1233 , H01L45/143 , H01L45/144
Abstract: A phase change memory cell with a heat blocking layer and a method for manufacturing the same are provided to significantly suppress transfer of heat in a selected phase change material pattern to a non-selected phase change material pattern. A phase change memory cell includes an interlayer dielectric(53), phase change material patterns(59a,59b), and heat blocking material patterns(57a,57b). The interlayer dielectric is formed on the semiconductor substrate. The phase change material patterns are formed in the interlayer dielectric. The heat blocking material patterns are formed between sidewalls of the phase change material patterns and the interlayer dielectric. The heat blocking material patterns have a lattice structure different from that of the phase change material patterns and the interlayer dielectric.
Abstract translation: 提供了具有热阻层的相变存储单元及其制造方法，以显着地抑制所选择的相变材料图案中的热量转移到未选择的相变材料图案。 相变存储单元包括层间电介质（53），相变材料图案（59a，59b）和热封材料图案（57a，57b）。 层间电介质形成在半导体衬底上。 在层间电介质中形成相变材料图案。 隔热材料图案形成在相变材料图案的侧壁和层间电介质之间。 阻热材料图案具有与相变材料图案和层间电介质不同的晶格结构。
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公开(公告)号：KR100763925B1
公开(公告)日：2007-10-05
申请号：KR1020060096288
申请日：2006-09-29
Applicant: 삼성전자주식회사
CPC classification number: B01L3/5027 , B01L7/52 , B01L2200/0647 , B01L2200/10 , B01L2300/1861 , B82Y5/00 , B82Y30/00 , C12M47/06 , C12N1/066 , C12N13/00 , C12N15/1006
Abstract: A method and apparatus for isolating a nucleic acid from cells or viruses by using carbon nanotubes and silica beads are provided to minimize the size of apparatus by performing cell destruction, nucleic acid extraction and nucleic acid amplification in one chamber, and reduce the time for separating nucleic acids. A method for isolating a nucleic acid from cells or viruses comprises the steps of: adding carbon nanotubes and silica beads having size of 50 nm to 1000 mum into solution containing cells or viruses; irradiating laser to the solution containing carbon nanotubes and silica beads to destroy the cells or viruses and bind nucleic acids discharged from the destroyed cells or viruses to the silica beads; and adding elution solution into the nucleic acid-bound silica beads to separate the nucleic acids. The method further comprises a step of amplifying the separated nucleic acids.
Abstract translation: 提供了通过使用碳纳米管和二氧化硅珠分离核酸与细胞或病毒的方法和装置，以通过在一个室中进行细胞破坏，核酸提取和核酸扩增并减少分离时间来最小化装置的尺寸 核酸。 从细胞或病毒中分离核酸的方法包括以下步骤：将尺寸为50nm至1000μm的碳纳米管和二氧化硅珠添加到含有细胞或病毒的溶液中; 将激光照射到含有碳纳米管和二氧化硅珠的溶液中以破坏细胞或病毒并将从破坏的细胞或病毒排出的核酸结合到二氧化硅珠上; 并将洗脱溶液加入到核酸结合的二氧化硅珠中以分离核酸。 该方法还包括扩增分离的核酸的步骤。
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公开(公告)号：KR1020100053205A
公开(公告)日：2010-05-20
申请号：KR1020080112221
申请日：2008-11-12
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247 , H01L23/62
CPC classification number: G11C13/0004 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/101 , H01L27/249 , H01L45/04 , H01L45/12 , H01L45/1226 , H01L45/146 , H01L45/1666 , H01L23/5252
Abstract: PURPOSE: A non-volatile memory device is provided to increase the stability of a data storage layer by forming a reaction preventive layer between the data story layer and electrodes. CONSTITUTION: At least one vertical electrode(20) is arranged to cross at least one horizontal electrode(10). At least one data storage layer(30) is interposed in the area where the vertical electrode and the horizontal electrode cross each other. The data storage layer stores changes in resistance. At least one reaction preventive layer(40) is interposed in the area where the vertical electrode and the horizontal electrode cross each other. The reaction preventive layer includes a first reaction preventive layer(40a) and a second reaction preventive layer(40b). The first reaction preventive layer is interposed between the horizontal electrode and the data storage layer. The second reaction preventive layer is interposed between the vertical electrode and the data storage layer.
Abstract translation: 目的：提供一种非易失性存储器件，通过在数据故事层和电极之间形成反应预防层来提高数据存储层的稳定性。 构成：至少一个垂直电极（20）布置成与至少一个水平电极（10）交叉。 在垂直电极和水平电极彼此交叉的区域中插入至少一个数据存储层（30）。 数据存储层存储电阻变化。 在垂直电极和水平电极交叉的区域中插入至少一个反应防止层（40）。 反应防止层包括第一防反应层（40a）和第二防反应层（40b）。 第一反应防止层介于水平电极和数据存储层之间。 第二反应防止层介于垂直电极和数据存储层之间。
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公开(公告)号：KR101493874B1
公开(公告)日：2015-02-16
申请号：KR1020080112221
申请日：2008-11-12
Applicant: 삼성전자주식회사
IPC: H01L27/115 , H01L21/8247 , H01L23/62
CPC classification number: G11C13/0004 , G11C13/0007 , G11C2213/32 , G11C2213/34 , G11C2213/71 , H01L27/101 , H01L27/249 , H01L45/04 , H01L45/12 , H01L45/1226 , H01L45/146 , H01L45/1666
Abstract: 본 발명에 따른 비휘발성 메모리 소자는, 수평 방향으로는 길이로 연장되고 수직 방향으로는 복수의 층들로 적층되어 있고 서로 평행하게 배치된 복수의 수평 전극들; 상기 수평 전극들과 교차되도록 배치되고 수직 방향으로는 길이로 연장되고 서로 평행하게 배치된 복수의 수직 전극들; 상기 수평 전극들 및 수직 전극들 사이에 형성되고 저항 변화를 저장할 수 있는 복수의 데이터 저장층들; 및 상기 수평 전극들 및 상기 수직 전극들의 교차 영역에 개재된 복수의 반응 방지층들을 포함한다.
비휘발성 메모리, 저항 변화, 반응 방지층, 실리사이드 반응-
公开(公告)号：KR1020090083094A
公开(公告)日：2009-08-03
申请号：KR1020080009062
申请日：2008-01-29
Applicant: 삼성전자주식회사
IPC: H01L27/115 , B82Y10/00
CPC classification number: H01L45/06 , B82Y10/00 , G11C13/0004 , H01L45/1233
Abstract: A resistive memory including nanoparticle and formation method of the same are provided to control location and density of the conductive pathway changing the resistance of the dielectric layer by controlling the size, location and density of conductive nano particles. The resistivity memory comprises the switching element and storage cell. The storage cell is the lower electrode(110). The dielectric layer(120) including a plurality of conductivity nano particles(122) is formed on the lower electrode, and stores the information according to the change of the resistive state. The upper electrode(130) is formed on the dielectric layer. A plurality of conductivity nano particles is formed in an interface between the upper electrode and the dielectric layer and between the lower electrode and dielectric layer. The dielectric layer comprises the transition metal oxide. A plurality of conductivity nano particles has the size of 10Š ~ 200Š.
Abstract translation: 提供包括纳米颗粒的电阻式存储器及其形成方法，以通过控制导电纳米颗粒的尺寸，位置和密度来控制导电通路的位置和密度来改变电介质层的电阻。 电阻率存储器包括开关元件和存储单元。 存储单元是下电极（110）。 在下电极上形成包含多个导电性纳米粒子（122）的电介质层（120），根据电阻状态的变化来存储信息。 上电极（130）形成在电介质层上。 在上电极和电介质层之间以及下电极和电介质层之间的界面中形成多个导电纳米颗粒。 电介质层包含过渡金属氧化物。 多种导电纳米颗粒的尺寸为10〜200μ。
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Patent Agency Ranking6.发明公开한 층에서 다른 결정 격자 구조를 갖는 상변화층 및 그형성 방법과 Ｔｉ 확산 방지 수단을 구비하는 상변화메모리 소자 및 그 제조 방법 无效在单层中具有不同晶体尺寸的相变层及其形成方法和包含用于防止TI扩散的方法的相变存储器件及其制造方法
公开(公告)号：KR1020080055508A
公开(公告)日：2008-06-19
申请号：KR1020060128940
申请日：2006-12-15
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L45/143 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1675 , H01L45/141
Abstract: A phase change layer having a different crystal lattice structure in a single layer is provided to prevent or reduce diffusion of titanium from a titanium-including adhesion layer formed on a phase change layer to the phase change layer by including a diffusion preventing layer in the phase change layer itself or between the phase change layer and its upper structure. A phase change material layer is made of a single layer divided into an upper layer(34b) and a lower layer(34a). The upper layer and the lower layer have different crystal lattices. The lower layer can be a chalcogenide material layer doped with impurities. The upper layer can be made of an undoped chalcogenide material layer.
Abstract translation: 提供在单层中具有不同晶格结构的相变层，以通过在相中包括防扩散层来防止或减少钛从形成在相变层上的含钛粘附层向相变层的扩散 改变层本身或相变层与其上部结构之间。 相变材料层由分为上层（34b）和下层（34a）的单层制成。 上层和下层具有不同的晶格。 下层可以是掺杂有杂质的硫族化物材料层。 上层可以由未掺杂的硫族化物材料层制成。
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公开(公告)号：KR1020060039668A
公开(公告)日：2006-05-09
申请号：KR1020040088859
申请日：2004-11-03
Applicant: 삼성전자주식회사
IPC: H01L21/31
CPC classification number: H01L21/02197 , C01G23/003 , C01P2002/72 , C01P2002/77 , C01P2004/03 , C01P2006/40 , C23C18/1216 , C23C18/1245 , H01L21/02282 , H01L21/31691
Abstract: A method of forming a ferroelectric thin film for suppressing the formation of a-domain and providing a sufficient layer coverage may be provided. The method includes immersing a substrate having the miscut surface into a reaction solution including a precursor compound for perovskite-type ferroelectric and water, and implementing a hydrothermal reaction in the reaction solution at a temperature lower than the phase transition temperature of the perovskite-type ferroelectric, thereby forming a perovskite-type ferroelectric thin film on the miscut surface of the substrate.
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公开(公告)号：KR1020080016120A
公开(公告)日：2008-02-21
申请号：KR1020060077808
申请日：2006-08-17
Applicant: 삼성전자주식회사
IPC: H01L27/115
CPC classification number: H01L45/06 , H01L45/1233 , H01L45/143 , H01L45/144
Abstract: A phase-change memory device and a manufacturing method thereof are provided to improve a retention characteristic by using a phase-change material comprising Sb of 22.2 or more. A phase-change material is formed between a bottom electrode(110) and a top electrode(130). The phase-change material comprises Sb of 22,2 at.% or more in a phase diagram of a ternary system containing Ge, Sb and Te. The phase-change material comprises Ge of 16.6 to 22.2 at.%, Sb of 22.2 to 41.6 at.% and Te of 41.6 to 55.5 at.%. The phase-change material contains at least one selected from the group consisting of B, C, N and O.
Abstract translation: 提供了一种相变存储器件及其制造方法，通过使用包含22.2以上的Sb的相变材料来提高保持特性。 在底部电极（110）和顶部电极（130）之间形成相变材料。 相变材料在含有Ge，Sb和Te的三元体系的相图中包含22.2原子％以上的Sb。 相变材料包含Ge为16.6〜22.2原子％，Sb为22.2〜41.6原子％，Te为41.6〜55.5原子％。 相变材料含有选自B，C，N和O中的至少一种。
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公开(公告)号：KR1020070111609A
公开(公告)日：2007-11-22
申请号：KR1020060044623
申请日：2006-05-18
Applicant: 삼성전자주식회사 , 삼성에스디아이 주식회사
IPC: H01L31/04 , H01L31/0224
CPC classification number: H01G9/2031 , H01G9/2013 , H01L31/022466 , Y02E10/542
Abstract: A semiconductor electrode including phosphate is provided to restrain reverse reaction and easily transfer electrodes by forming a metal oxide layer having introduced phosphate on a conductive transparent electrode. A transparent electrode on which a conductive material is coated is formed on a substrate. A metal oxide layer including phosphate is formed on the transparent electrode. The phosphate can be a type of PO2 or PO3. The metal oxide layer can include a metal oxide, a binder solution composed of a solvent and a binder, and a paste composition including a compound containing a phosphate group.
Abstract translation: 提供包括磷酸盐的半导体电极以通过在导电透明电极上形成具有引入磷酸盐的金属氧化物层来抑制反向反应并容易地传输电极。 在其上涂覆有导电材料的透明电极形成在基板上。 在透明电极上形成包含磷酸盐的金属氧化物层。 磷酸盐可以是一种PO2或PO3。 金属氧化物层可以包括金属氧化物，由溶剂和粘合剂组成的粘合剂溶液，以及包含含有磷酸酯基的化合物的糊剂组合物。
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