Actuator
    2.
    发明专利
    Actuator 有权
    执行器

    公开(公告)号:JP2012015506A

    公开(公告)日:2012-01-19

    申请号:JP2011137984

    申请日:2011-06-22

    CPC classification number: H01L21/67742 G03F7/7075 H01L21/67126

    Abstract: PROBLEM TO BE SOLVED: To provide an actuator that can reduce the possibility that the contaminant proceeds to the outside.SOLUTION: An actuator is configured to include a first portion and a second portion and configured so that the first portion moves relative to the second portion. A labyrinth seal is provided between the first portion and the second portion. The labyrinth seal restricts the flow of gas toward a second side of the labyrinth seal from a first side of the labyrinth seal. One or more inlets and one or more outlets are provided within the labyrinth seal, and the one or more inlets are configured to deliver the gas to a position within the labyrinth seal, and one or more outlets are configured to remove at least one part of the gas from the position within the labyrinth seal.

    Abstract translation: 要解决的问题:提供可以降低污染物进入外部的可能性的致动器。 解决方案:致动器构造成包括第一部分和第二部分,并且被构造成使得第一部分相对于第二部分移动。 迷宫式密封件设置在第一部分和第二部分之间。 迷宫式密封件从迷宫式密封件的第一侧限制气体朝向迷宫式密封件的第二侧的流动。 一个或多个入口和一个或多个出口设置在迷宫式密封件内,并且一个或多个入口构造成将气体输送到迷宫式密封件内的位置,并且一个或多个出口构造成去除至少一部分 气体从迷宫内的位置密封。 版权所有(C)2012,JPO&INPIT

    Substrate treatment device and device manufacturing method
    3.
    发明专利
    Substrate treatment device and device manufacturing method 审中-公开
    基板处理装置和装置制造方法

    公开(公告)号:JP2009124142A

    公开(公告)日:2009-06-04

    申请号:JP2008286357

    申请日:2008-11-07

    CPC classification number: H01L21/67201 G03F7/70841

    Abstract: PROBLEM TO BE SOLVED: To provide a device which can limit a temperature effect when a high working speed is used for a load lock. SOLUTION: This substrate treatment device has a vacuum chamber and the load lock for gas removal. The load lock has a support table in order to support a substrate. A cover plate is provided in the load lock and the cover plate has a lower surface facing an upper surface of the support table. An opening is formed in the lower surface of the cover plate and enables gas removal from an upper part of the substrate in the substantially perpendicular direction to the lower surface. In one embodiment, a gas removal structure with the opening in the upper surface of the support table is provided and gas pressure between the upper surface of the support table and the substrate is reduced through the opening in an early stage to predetermined pressure lower than simultaneous load lock pressure in the remainder of the load lock. When the load lock pressure in the remainder of the load lock is reduced to pressure lower than the predetermined pressure, the gas pressure between the upper surface of the support table and the substrate is reduced together with the load lock pressure in the remainder of the load lock. COPYRIGHT: (C)2009,JPO&INPIT

    Abstract translation: 要解决的问题:提供一种当使用高工作速度进行加载锁定时可以限制温度效应的装置。

    解决方案:该基板处理装置具有真空室和用于除气的负载锁。 负载锁具有支撑台以支撑基板。 盖板设置在装载锁中,盖板具有面向支撑台的上表面的下表面。 在盖板的下表面上形成一个开口,使得能够从与基板垂直的方向从基板的上部排出气体。 在一个实施例中,提供了在支撑台的上表面中具有开口的气体去除结构,并且支撑台的上表面与基板之间的气体压力通过早期的开口减小到低于同时的预定压力 加载锁定的剩余部分中的加载锁定压力。 当负载锁定的剩余部分中的负载锁定压力降低到低于预定压力的压力时,支撑台的上表面和基板之间的气体压力与负载的其余部分中的负载锁定压力一起减小 锁。 版权所有(C)2009,JPO&INPIT

    Substrate processing apparatus and device manufacturing method
    4.
    发明专利
    Substrate processing apparatus and device manufacturing method 审中-公开
    基板加工设备和设备制造方法

    公开(公告)号:JP2012009883A

    公开(公告)日:2012-01-12

    申请号:JP2011177939

    申请日:2011-08-16

    CPC classification number: H01L21/67201 G03F7/70841

    Abstract: PROBLEM TO BE SOLVED: To provide an apparatus that can limit temperature effect when a high operation speed is used for a load lock.SOLUTION: A substrate processing apparatus has a vacuum chamber and the load lock for gas removal. The load lock has a support table for supporting a substrate. A cover plate is provided in the load lock and has a lower surface facing an upper surface of the support table. An opening is provided to the lower surface of the cover plate so as to remove gas from above the substrate in a direction substantially perpendicular to the lower surface. As an embodiment, gas removal constitution which has an opening in the upper surface of the support table is provided to initially reduce gas pressure between the upper surface of the support table and the substrate to predetermined pressure lower than simultaneous load lock pressure in the rest of the load lock through the opening. When the load lock pressure in the rest of the load lock is made lower than predetermined, the gas pressure between the upper surface of the support table and the substrate is reduced together with the load lock pressure in the rest of the load lock.

    Abstract translation: 要解决的问题:提供一种当将高操作速度用于负载锁定时可以限制温度效应的装置。 解决方案:基板处理装置具有真空室和用于除气的装载锁。 负载锁具有用于支撑基板的支撑台。 盖板设置在装载锁中,并且具有面向支撑台的上表面的下表面。 在盖板的下表面设置有开口,从而在基板的大致垂直于下表面的方向从基板的上方除去气体。 作为一个实施例,提供了在支撑台的上表面具有开口的气体去除构造,以便最初将支撑台的上表面和基板之间的气体压力降低到低于其余部分中的同时的负载锁定压力的预定压力 负载通过开口锁定。 当负载锁的其余部分的负载锁定压力低于预定值时,支撑台的上表面和基板之间的气体压力与负载锁的其余部分中的负载锁定压力一起减小。 版权所有(C)2012,JPO&INPIT

    Substrate support and lithographic process
    5.
    发明专利
    Substrate support and lithographic process 有权
    基板支持和图形处理

    公开(公告)号:JP2008172214A

    公开(公告)日:2008-07-24

    申请号:JP2007316876

    申请日:2007-12-07

    CPC classification number: G03F7/70875 G03F7/70341 G03F7/707

    Abstract: PROBLEM TO BE SOLVED: To disclose a substrate support constituted to support a substrate for immersion lithographic processing. SOLUTION: The substrate support has a central part and a peripheral part, the peripheral part includes an extraction duct for extracting a liquid from an upper surface of the substrate support, and extraction duct is connected to an exit duct for duct the liquid away from the substrate support. The substrate support further includes a thermal decoupler for decreasing heat transmission between the central part and the peripheral part. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题:公开一种用于支持浸没式光刻处理用基板的基板支撑体。 解决方案:基板支撑件具有中心部分和周边部分,周边部分包括用于从基板支撑件的上表面提取液体的提取管道,并且提取管道连接到出口管道,用于将液体 远离基板支撑。 衬底支撑件还包括用于减小中心部分和周边部分之间的热传递的热分离器。 版权所有(C)2008,JPO&INPIT

    SUBSTRATE SUPPORT AND LITHOGRAPHIC PROCESS

    公开(公告)号:SG143241A1

    公开(公告)日:2008-06-27

    申请号:SG2007184781

    申请日:2007-12-10

    Abstract: Substrate support and lithographic process A substrate support constructed to support a substrate for immersion lithographic processing is disclosed. The substrate support has a central part and a peripheral part, the peripheral part comprising an extraction duct configured to extract a liquid from a top surface of the substrate support, the extraction duct connected to an exit duct configured to duct the liquid away from the substrate support. The substrate support further includes a thermal decoupler, arranged in the peripheral part, configured to arranged to decrease heat transport between the central part and the peripheral part.

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