公开(公告)号：JP2004343057A

公开(公告)日：2004-12-02

申请号：JP2004061646

申请日：2004-03-05

Applicant: Asml Netherlands Bv ,  Koninkl Philips Electronics Nv ,  エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ ,  コニンクリユケ フィリップス エレクトロニクス エヌ.ブイ.

Inventor： HENDRIKS ROBERT FRANS MARIA ,  LENDERINK EGBERT ,  MONSHOUWER RENE ,  VAN DER LEE ALEXANDER MARC ,  T HOOFT GERT WIM

IPC: G03F9/00 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F7/70483 ,  G03F7/70216 ,  G03F9/7065

Abstract: PROBLEM TO BE SOLVED: To provide an enhanced alignment system, particularly a system wherein a smaller alignment mark is available.
SOLUTION: A lithographic projection apparatus comprises: a radiation system for providing a projection beam of radiation; a support structure for supporting patterning means, the patterning means serving to pattern the projection beam according to a desired pattern; a substrate table for holding a substrate; and a projection system for projecting the patterned beam onto a target portion of the substrate, and an off-axis alignment system comprising a radiation source for illuminating on a substrate held on said substrate table at least one mark which is usable for alignment, the radiation source comprising first means for producing a ray of laser or laser-like light with a high brightness and a first wavelength spectrum which is relatively narrow and second means for guiding the ray and generating substantially within dimensions of the ray light with a second wavelength spectrum that is substantially broader than the first wavelength spectrum.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：CA3021916A1

公开(公告)日：2017-11-02

申请号：CA3021916

申请日：2017-04-12

Applicant: ASML NETHERLANDS BV

Inventor： NASALEVICH MAXIM ALEKSANDROVICH ,  ABEGG ERIK ACHILLES ,  BANERJEE NIRUPAM ,  BLAUW MICHIEL ALEXANDER ,  BROUNS DERK SERVATIUS GERTRUDA ,  JANSSEN PAUL ,  KRUIZINGA MATTHIAS ,  LENDERINK EGBERT ,  MAXIM NICOLAE ,  NIKIPELOV ANDREY ,  NOTENBOOM ARNOUD WILLEM ,  PILIEGO CLAUDIA ,  PETER MARIA ,  RISPENS GIJSBERT ,  SCHUH NADJA ,  VAN DE KERKHOF MARCUS ADRIANUS ,  VAN DER ZANDE WILLEM JOAN ,  VAN ZWOL PIETER-JAN ,  VERBURG ANTONIUS WILLEM ,  VERMEULEN JOHANNES PETRUS MARTINUS BERNARDUS ,  VLES DAVID ,  VOORTHUIJZEN WILLEM-PIETER ,  ZDRAVKOV ALEKSANDAR NIKOLOV

IPC: G03F1/24 ,  G03F1/62 ,  G03F7/20

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

公开(公告)号：SG127713A1

公开(公告)日：2006-12-29

申请号：SG200401075

申请日：2004-03-05

Applicant: ASML NETHERLANDS BV ,  KONKLIJKE PHILIPS ELECTRONICS

Inventor： HENDRIKS ROBERT FRANS MARIA ,  LENDERINK EGBERT ,  MONSHOUWER RENE ,  LEE VAN DER ALEXANDER MARC ,  T HOOFT GERT WIM

IPC: G03F9/00 ,  G03F7/00 ,  G03F7/20 ,  H01L21/027

Abstract: A lithographic apparatus equipped with an improved alignment system, is presented herein. In one embodiment, the apparatus includes a radiation system for providing a projection beam of radiation, a support structure for supporting a patterning device that configures the projection beam according to a desired pattern, a substrate holder for holding a substrate, projection system for projecting the patterned beam onto a target portion of the substrate, and an alignment system. The alignment system includes a radiation source for illuminating at least one mark which is usable for alignment on a substrate and an imaging system for imaging light which has interacted with the at least one mark to generate alignment information.