Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer (2) on a planar surface (4) of a substrate (6). The substrate comprises a first substrate portion and a second substrate portion (12). The method further comprises removing the first substrate portion to form a freestanding membrane (14) from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
Abstract:
A pellicle for a lithographic apparatus, wherein the pellicle comprises nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus comprising at least one compensating layer selected and configured to counteract changes in the transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.
Abstract:
The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer (2) on a planar surface (4) of a substrate (6). The substrate comprises a first substrate portion and a second substrate portion (12). The method further comprises removing the first substrate portion to form a freestanding membrane (14) from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
A pellicle comprising a core comprising a material other than silicon carbide, a silicon carbide adhesion layer, and a ruthenium capping layer, the ruthenium capping layer being in contact with the silicon carbide adhesion layer. Also described is a method of preparing a pellicle comprising the steps of: (i) providing a pellicle core; (ii) providing a silicon carbide adhesion layer on the pellicle core; and (iii) providing a ruthenium capping layer in contact with the silicon carbide adhesion layer. Also provided is the use of silicon carbide as an adhesion layer in an EUV pellicle as well as an assembly.
Abstract:
A wafer comprising a mask on one face and at least one layer on the opposite face, wherein the mask comprises at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle comprising the steps of: providing a wafer comprising a mask on one face and at least one layer on the opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle comprising the steps of: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may comprise a metal nitride layer.