Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer (2) on a planar surface (4) of a substrate (6). The substrate comprises a first substrate portion and a second substrate portion (12). The method further comprises removing the first substrate portion to form a freestanding membrane (14) from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.
Abstract:
A membrane assembly (80) for EUV lithography, the membrane assembly comprising: a planar membrane (40); a border (81) configured to hold the membrane; and a frame assembly (50) connected to the border and configured to attach to a patterning device (MA) for EUV lithography; wherein the frame assembly is connected to the border in a direction perpendicular to the plane of the membrane such that in use the frame assembly is between the border and the patterning device.
Abstract:
The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.
Abstract:
Methods of manufacturing a pellicle for a lithographic apparatus are disclosed. In one arrangement the method comprises depositing at least one graphene layer (2) on a planar surface (4) of a substrate (6). The substrate comprises a first substrate portion and a second substrate portion (12). The method further comprises removing the first substrate portion to form a freestanding membrane (14) from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.
Abstract:
Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.
Abstract:
A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine
Abstract:
A method for manufacturing a membrane assembly for EUV lithography, the method comprising: providing a stack comprising a planar substrate and at least one membrane layer, wherein the planar substrate comprises an inner region and a border region around the inner region; positioning the stack on a support such that the inner region of the planar substrate is exposed; and selectively removing the inner region of the planar substrate using a non-liquid etchant, such that the membrane assembly comprises: a membrane formed from the at least one membrane layer; and a border holding the membrane, the border formed from the border region of the planar substrate.