Abstract:
PROBLEM TO BE SOLVED: To prevent or reduce contamination in immersion lithographic apparatus. SOLUTION: The immersion lithographic apparatus is cleaned by a cleaning liquid essentially consisting of ultra-pure water, and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide having a concentration of up to 5%, or (c) ozone having a concentration of up to 50 ppm, or (d) oxygen having a concentration of up to 10 ppm, or (e) an arbitrary combination selected from (a)-(d). COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent or reduce contamination in immersion lithographic apparatus. SOLUTION: The lithographic apparatus has an in-situ ozonizer used for generating ozone gas by the UV radiation of gas containing oxygen. Ozone generated in this manner is dissolved in ultra-pure water and becomes a cleaning liquid by allowing the ozone to come into contact with the ultra-pure water through a permeable membrane. The cleaning liquid passes through an immersion hood to remove contamination on the surface of an immersion space. The used cleaning liquid is fed to an outlet system from the immersion hood with air and ozone gas confined in the immersion hood. COPYRIGHT: (C)2009,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To prevent or reduce contamination of an immersion lithographic apparatus.SOLUTION: The immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra-pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d).
Abstract:
Lithographic Apparatus and Contamination Removal or Prevention Method An immersion lithographic apparatus is cleaned by use of a cleaning liquid consisting essentially of ultra- pure water and (a) a mixture of hydrogen peroxide and ozone, or (b) hydrogen peroxide at a concentration of up to 5%, or (c) ozone at a concentration of up to 50 ppm, or (d) oxygen at concentration of up to 10 ppm, or (e) any combination selected from (a)-(d). [Fig 3]
Abstract:
Membranes for EUV lithography are disclosed. In one arrangement, a membrane comprises a stack having layers in the following order: a first capping layer comprising an oxide of a first metal; a base layer comprising a compound comprising a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer comprising an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.