公开(公告)号：JP2005236281A

公开(公告)日：2005-09-02

申请号：JP2005020980

申请日：2005-01-28

Applicant: Asml Netherlands Bv ,  Rohm & Haas Electronic Materials Llc ,  エイエスエムエル・ネザーランド・ベスローテン・フェンノートシャップ ,  ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー.

Inventor： LINSKENS FRANK ,  PELLENS RUDY

IPC: H01L21/28 ,  H01L21/285 ,  H01L21/338 ,  H01L29/417 ,  H01L29/78 ,  H01L29/812

CPC classification number: H01L21/28587

Abstract: PROBLEM TO BE SOLVED: To provide the forming method of a low cost T-gate structure in the manufacture of the T-gate structure used in the manufacture of an electronic device.
SOLUTION: The T-gate structure is formed on a substrate by using two lithographic processes that use the same frequency radiation. A negative photoresist is typically used as a photoresist in a second lithographic process. The merit is that a single exposure tool can be used in place of a plurality of tools, thereby enabling the reduction of the cost.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供在制造电子设备中使用的T形门结构的制造中的低成本T型栅极结构的形成方法。 解决方案：通过使用使用相同频率辐射的两个光刻工艺，在衬底上形成T栅极结构。 在第二光刻工艺中通常使用负光致抗蚀剂作为光致抗蚀剂。 优点是可以使用单个曝光工具来代替多个工具，从而能够降低成本。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2012230408A

公开(公告)日：2012-11-22

申请号：JP2012148551

申请日：2012-07-02

Applicant: Rohm & Haas Electronic Materials Llc ,  ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. ,  Asml Netherlands Bv ,  エイエスエムエル・ネザーランド・ベスローテン・フェンノートシャップ

Inventor： LINSKENS FRANK ,  PELLENS RUDY

IPC: G03F7/40 ,  H01L21/28 ,  G03F7/26 ,  H01L21/027 ,  H01L21/285 ,  H01L21/338 ,  H01L29/41 ,  H01L29/417 ,  H01L29/78 ,  H01L29/812

CPC classification number: H01L21/28587

Abstract: PROBLEM TO BE SOLVED: To provide an improved method for forming a T-gate structure.SOLUTION: The method includes steps of: (a) providing a substrate; (b) disposing a planarizing layer on the substrate; (c) disposing a layer of a UV-sensitive first photoresist; (d) patterning the first photoresist by exposing to UV radiation through a mask and developing the photoresist to define a first opening for a base of a T-gate; (e) transferring the pattern to the planarizing layer; (f) rendering the pattern insensitive to UV radiation; (g) disposing a layer of a UV-sensitive second photoresist; (h) patterning the second photoresist by exposing to UV radiation through a mask and developing the photoresist to define a second opening for a cap of the T-gate over the first opening; and (i) depositing a conductive material within the first opening and the second opening to form a T-gate.

Abstract translation: 要解决的问题：提供一种用于形成T型栅结构的改进方法。 解决方案：该方法包括以下步骤：（a）提供衬底; （b）在基板上设置平坦化层; （c）设置一层UV敏感的第一光致抗蚀剂; （d）通过暴露于UV辐射通过掩模来图案化第一光致抗蚀剂并显影光致抗蚀剂以限定T形栅的基底的第一开口; （e）将图案转移到平坦化层; （f）使图案对紫外线辐射不敏感; （g）设置一层UV敏感的第二光致抗蚀剂; （h）通过通过掩模暴露于UV辐射来图案化所述第二光致抗蚀剂并使所述光致抗蚀剂显影以在所述第一开口上限定所述T形栅极的帽的第二开口; 和（i）在第一开口和第二开口内沉积导电材料以形成T形栅极。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：NL2012052A

公开(公告)日：2014-08-04

申请号：NL2012052

申请日：2014-01-07

Applicant: ASML NETHERLANDS BV

Inventor： SMEETS DRIES ,  BLEEKER ARNO ,  LEE CHRIS ,  JAGER PIETER ,  MULDER HEINE ,  PELLENS RUDY

IPC: G03F7/20 ,  H05G2/00

公开(公告)号：NL2003531A

公开(公告)日：2010-04-26

申请号：NL2003531

申请日：2009-09-23

Applicant: ASML NETHERLANDS BV

Inventor： VANGHELUWE RIK ,  PELLENS RUDY ,  DAVERVELD RALF ,  SINKWITZ STEPHAN

IPC: G03F7/20 ,  H01L21/027

公开(公告)号：NL2003914A

公开(公告)日：2010-06-09

申请号：NL2003914

申请日：2009-12-07

Applicant: ASML NETHERLANDS BV

Inventor： KNAAPEN THIJS ,  PELLENS RUDY ,  HOEVEN JAN ,  ANSTOTZ DAVID ,  BRANDS GERT-JAN ,  BADAM VIJAY ,  ZANDEN MARCUS ,  GROOT CASPER ,  BRULS RICHARD ,  DOMMELEN YOURI ,  JACOBS JOHANNES ,  KAMPHUIS MARTIJN ,  LIEBREGTS PAULUS ,  MAAS RUDOLF ,  STAVENGA MARCO ,  VERSPAGET COEN

IPC: G03F7/20

Abstract: A lithographic apparatus having a table including a target and/or a sensor and a liquid displacing device to displace liquid from the target and/or sensor using a localized gas flow is disclosed. The liquid displacement device may be positioned at various positions, e.g. mounted to a liquid handling device at an exposure station, adjacent or in a transfer path between the exposure station and a measurement station, at a load/unload station or adjacent a sensor.