公开(公告)号：EP2510538A4

公开(公告)日：2014-03-26

申请号：EP10836729

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL ,  NUNES RONALD W

IPC: H01L21/311 ,  G03F7/42

CPC classification number: H01L21/31133 ,  G03F7/423

公开(公告)号：EP1846947A4

公开(公告)日：2009-04-15

申请号：EP05852630

申请日：2005-12-02

Applicant: IBM

Inventor： VEREECKEN PHILIPPE M ,  BASKER VEERARAGHAVAN ,  CABRAL CYRIL JR ,  COOPER EMANUEL I ,  DELIGIANNI HARIKLIA ,  FRANK MARTIN M ,  JAMMY RAJARAO ,  PARUCHURI VAMSI KRISHNA ,  SAENGER KATHERINE L ,  SHAO XIAOYAN

IPC: H01L21/302 ,  H01L29/745

CPC classification number: H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

Abstract: A method for electroplating a gate metal (9) or other conducting or semiconducting material on a gate dielectric (2) is provided. The method involves selecting a substrate (3, 4), dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be generated at an interface between the dielectric layer and the electrolyte solution or melt.

公开(公告)号：WO2011072188A3

公开(公告)日：2011-09-15

申请号：PCT/US2010059800

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM ,  AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  TOTIR GEORGE GABRIEL

IPC: H01L21/3063

CPC classification number: H01L21/31133 ,  G03F7/423

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.

Abstract translation: 提出了用于去除掩模材料（例如光致抗蚀剂）的方法以及通过去除掩模材料形成的电子器件。 例如，用于去除掩蔽材料的方法包括使掩蔽材料与包含铈和至少一种另外的氧化剂的溶液接触。 铈可以包含在盐中。 盐可以是硝酸铈铵。 该至少一种另外的氧化剂可以是锰，钌和/或含锇化合物。

公开(公告)号：WO2012051380A3

公开(公告)日：2012-07-12

申请号：PCT/US2011056084

申请日：2011-10-13

Applicant: ADVANCED TECH MATERIALS ,  COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN ,  IBM

Inventor： COOPER EMANUEL I ,  TOTIR GEORGE GABRIEL ,  PAYNE MAKONNEN

IPC: C11D7/32 ,  C09K13/00 ,  G03F7/42 ,  H01L21/027 ,  H01L21/304

CPC classification number: C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

Abstract: Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

Abstract translation: 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。

公开(公告)号：WO2006088533A3

公开(公告)日：2007-09-27

申请号：PCT/US2005043464

申请日：2005-12-02

Applicant: IBM ,  ANDRICACOS PANAYOTIS C ,  CANAPERI DONALD F ,  COOPER EMANUEL I ,  COTTE JOHN M ,  DELIGIANNI HARIKLIA ,  ECONOMIKOS LAERTIS ,  EDELSTEIN DANIEL C ,  FRANZ SILVIA ,  PRANATHARTHIHARAN BALASUBRAMAN ,  KRISHNAN MAHADEVAIYER ,  MANSSON ANDREW P ,  WALTON ERICK G ,  WEST ALAN C

Inventor： ANDRICACOS PANAYOTIS C ,  CANAPERI DONALD F ,  COOPER EMANUEL I ,  COTTE JOHN M ,  DELIGIANNI HARIKLIA ,  ECONOMIKOS LAERTIS ,  EDELSTEIN DANIEL C ,  FRANZ SILVIA ,  PRANATHARTHIHARAN BALASUBRAMAN ,  KRISHNAN MAHADEVAIYER ,  MANSSON ANDREW P ,  WALTON ERICK G ,  WEST ALAN C

IPC: B23H3/00

CPC classification number: C25F3/02 ,  B23H5/08 ,  C09G1/04 ,  H01L21/32125

Abstract: Methods and compositions for electro-chemical-mechanical polishing (e-CMP) of silicon chip interconnect materials, such as copper, are provided. The methods include the use of compositions according to the invention in combination with pads having various configurations.

Abstract translation: 提供了诸如铜之类的硅芯片互连材料的电化学机械抛光（e-CMP）的方法和组合物。 所述方法包括使用根据本发明的组合物与具有各种构型的垫组合。

公开(公告)号：SG49985A1

公开(公告)日：1998-06-15

申请号：SG1996011044

申请日：1996-11-04

Applicant: IBM

Inventor： SARAF RAVI F ,  ROLDAN JUDITH MARIE ,  GAYNES MICHAEL ANTHONY ,  BOOTH RICHARD BENTON ,  OSTRANDER STEPHEN PAUL ,  COOPER EMANUEL I ,  SAMBUCETTI CARLOS J

IPC: B23K35/24 ,  B23K35/30 ,  H01B1/22 ,  H01L23/488 ,  H01L23/50 ,  H01R43/02 ,  H05K3/10

公开(公告)号：SG181642A1

公开(公告)日：2012-07-30

申请号：SG2012042941

申请日：2010-12-10

Applicant: ADVANCED TECH MATERIALS ,  IBM

Inventor： AFZALI-ARDAKANI ALI ,  BAUM THOMAS H ,  BOGGS KARL E ,  COOPER EMANUEL I ,  CYWAR DOUGLAS ,  KERN MATTHEW ,  KHOJASTEH MAHMOUD ,  NUNES RONALD W ,  TOTIR GEORGE GABRIEL

Abstract: Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium and at least one additional oxidant. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. The at least one additional oxidant may be a manganese, ruthenium, and/or osmium-containing compound.