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    Light-emitting device
    1.
    发明专利
    Light-emitting device 审中-公开
    发光装置

    公开(公告)号：JP2006196919A

    公开(公告)日：2006-07-27

    申请号：JP2006065668

    申请日：2006-03-10

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： NIRSCHL ERNST ,  SCHOENFELD OLAF

    IPC: H01L33/40 ,  H01L33/00

    CPC classification number: H01L33/40 ,  H01L33/0079

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting device, designed to form multi-layers containing at least one active layer on the front side of a substrate composed of a semiconductor material, thereafter, at least partially remove the substrate thus formed, and then join the multi-layers to a hetero-substrate. SOLUTION: A substrate is removed in a selective etching agent for a material of the substrate by wet chemical etching, and a first metal contact layer 7 is applied to the back side 6 of multi-layers 2, 3, 4, 5 facing the front side of the removed substrate, and a second metal contact layer 10 is applied to the front side 8 of a hetero-substrate 9. The back side 6 of the multi-layers 2, 3, 4, 5 thus covered is jointed to the front side 8, covered with layers 10 of the hetero-substrate 9 by an amorphous coupling under the action of heat. COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：提供一种发光装置，其被设计成形成在由半导体材料构成的衬底的前侧上包含至少一个有源层的多层，此后至少部分地移除衬底，因此 形成，然后将多层连接到异质衬底。 解决方案：通过湿化学蚀刻在用于衬底材料的选择性蚀刻剂中除去衬底，并且将第一金属接触层7施加到多层2,3,4,5的背面6 面对被除去的基板的前侧，并且第二金属接触层10被施加到异质基板9的前侧8.接合这样被覆盖的多层2,3,4,5的背面6 通过在热作用下的非晶耦合而覆盖异质衬底9的层10的正面8。 版权所有（C）2006，JPO＆NCIPI

    Light emitting device
    2.
    发明专利
    Light emitting device 审中-公开
    发光装置

    公开(公告)号：JP2007201516A

    公开(公告)日：2007-08-09

    申请号：JP2007126779

    申请日：2007-05-11

    Applicant: Osram Opto Semiconductors Gmbh ,  オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH

    Inventor： NIRSCHL ERNST ,  SCHOENFELD OLAF

    IPC: H01L33/40 ,  H01L33/00

    CPC classification number: H01L33/40 ,  H01L33/0079

    Abstract: PROBLEM TO BE SOLVED: To provide a light emitting device which is used for opto-electronics and electronics for vehicles. SOLUTION: The device comprises a sequence of layers including at least one active layer and deposited epitaxially, a first metal contact layer formed on the back of the sequence of layers, a second metal contact layer formed on the front face of the hetero substrate, and a brazing layer generating electrical and mechanical contact between the first and second metal contact layers, wherein the hetero substrate is a silicon hetero substrate. COPYRIGHT: (C)2007,JPO&INPIT

    Abstract translation: 要解决的问题：提供用于车辆的光电子和电子设备的发光装置。 解决方案：该器件包括一系列层，包括至少一个有源层并外延沉积，形成在该层序列的背面上的第一金属接触层，形成在杂原子的正面上的第二金属接触层 衬底和在第一和第二金属接触层之间产生电和机械接触的钎焊层，其中异质衬底是硅异质衬底。 版权所有（C）2007，JPO＆INPIT

    8.
    发明专利
    未知

    公开(公告)号：DE59610508D1

    公开(公告)日：2003-07-10

    申请号：DE59610508

    申请日：1996-07-16

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： BOGNER GEORG ,  BRUNNER HERBERT ,  HAAS HEINZ ,  LUFT JOHANN ,  NIRSCHL ERNST ,  SPAETH WERNER ,  STATH NORBERT ,  TEICH WOLFGANG

    IPC: H01L33/54 ,  H01S5/02 ,  H01S5/022 ,  H01S5/18 ,  H01S5/32 ,  H01S5/34

    Abstract: The invention relates to an infrared emitter component with a commercial light-emitting diode (LED) package (11) which has two electrode terminals (13, 14), one of which has a well-shaped reflector (12), and which has an optically transparent, electrically nonconductive encapsulating material (16). The invention provides that a semiconductor laser chip (1) is mounted in the well-shaped reflector (12) of the LED package. The semiconductor laser chip (1) has a quantum-well structure, especially with a strained-layer structure, for example MOVPE epitaxial layers with the layer sequence GaAlAs-InGaAs-GaAlAs. The optically transparent, electrically nonconductive material (16) of the LED package (11) may incorporate a diffuser material (17) which in terms of type and concentration is structured and introduced so as to produce, in conjunction with the semiconductor laser chip (1) encapsulated in the LED package (11), a radiation characteristic or an enlargement of the effective emission surface that is comparable to that of a commercial infrared LED.

    Electroluminescent component, especially LED includes side-by-side spaced radiation decoupling elements composed of active laminated stacks each having an emission zone and a contact element
    9.
    发明专利
    Electroluminescent component, especially LED includes side-by-side spaced radiation decoupling elements composed of active laminated stacks each having an emission zone and a contact element 未知

    公开(公告)号：DE10142541A1

    公开(公告)日：2003-03-27

    申请号：DE10142541

    申请日：2001-08-30

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SPAETH WERNER ,  NIRSCHL ERNST ,  LINDER NORBERT

    IPC: H01L27/15 ,  H01L33/08 ,  H01L33/00

    Abstract: A electroluminescent component (1) comprises a substrate (2) carrying several side-by-side spaced apart radiation decoupling elements (4). The radiation decoupling elements comprise active laminated stacks (7) with an emission zone (8) and a contact element on every radiation decoupling element (4). The width (b') of the contact elements is smaller than the width of the radiation decoupling elements (b) and each contact element is formed on the center of a radiation decoupling element. The width (b) of the radiation decoupling elements at a given height (h) is sufficiently small to allow a substantial amount of light (11) emitted laterally of the emission zone (8) to be decoupled directly through the lateral faces (12) of the radiation decoupling elements. The radiation decoupling elements (4) may have a strip-like structure having a width (b), a point-like structure having a diameter corresponding to (b) or may be cylindrical or polyhedral in shape. The radiation decoupling elements are electrically connected to each other and with a bond pad (15) on the front side of the component (1). The dimensions of the radiation decoupling elements (4) meet the condition: 0

    10.
    发明专利
    未知

    公开(公告)号：DE59705207D1

    公开(公告)日：2001-12-06

    申请号：DE59705207

    申请日：1997-08-04

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： SEDLMEIER REINHARD ,  NIRSCHL ERNST ,  STATH NORBERT

    IPC: H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01L33/30

    Abstract: A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover layer, a GaAs and/or AlGaAs containing active layer and a second AlGaAs cover layer. In which case, the first AlGaAs cover layer and the active layer are fabricated by a metal organic vapor phase epitaxy (MOVPE) method and the second AlGaAs cover layer is fabricated by a liquid phase epitaxy (LPE) method. Furthermore, an electrically conductive coupling-out layer having a thickness of at least about 10 mum is deposited on the second AlGaAs cover layer by the LPE method. The coupling-out layer is optically transparent in the infrared spectral region.

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