Abstract:
A carrier device for a semiconductor chip (3) comprising a bondable and/or solderable metallic carrier (1) having a mounting region (21) for the semiconductor chip (3) and a soldering region (20) is specified, wherein the carrier (1) is at least partly covered with a covering material (2), and wherein a solder barrier (4) is arranged between the soldering region (20) and the mounting region (21) at an interface (10) between the carrier (1) and the covering material (2). Creep of a solder from the solder region (20) to the mounting region (21) along the interface can be reduced or totally prevented due to the solder barrier. An electronic component and an optoelectronic component are furthermore specified.
Abstract:
A lens arrangement (6) for an LED display device (2) comprises a lens (8). The lens (8) has a first lens surface, and an optical axis. The optical axis penetrates the first lens surface of the lens (8). The lens arrangement (6) further comprises a transparent transitional body (10), which is firmly coupled to the lens (8) on the first lens surface, which is more temperature-resistant than the lens (8), and which has an optical axis that is parallel to the optical axis of the lens (8).
Abstract:
The invention relates to a method for producing an opto-electronic component, comprising the following steps: - Providing a substrate (1) having a first main surface (2) and a second main surface (3) opposite the first main surface (1), - fastening to the first main surface (2) of the substrate (1) a semiconductor body (4) that is suitable for emitting electromagnetic radiation from a front side (5), and - applying a cladding that is permeable to the radiation of the optoelectronic semiconductor body (4), at least over the front side (5) of the semiconductor body (4), the cladding being designed as an optical element (19) using a closed cavity (18) having the contour of the optical element (19). The invention further relates to an optoelectronic component.
Abstract:
The component has a connection carrier (1) with conductive strips (2) and a chip connection region (3). An opto-electronic semiconductor chip (4) is superimposed on the connection region. An opaque material (6) covers the conductive strips and areas of the chip connection region. A radiation passage surface of the semiconductor chip is uncovered by the opaque material. A frame (8) surrounds the chip connection region by four sides. The opaque material comprises light absorbent particles (7a), which are attached into a matrix material. An independent claim is also included for a method for manufacturing an opto-electronic semiconductor component.
Abstract:
In einer Ausführungsform des optoelektronischen Halbleiterbauteils (1) umfasst dieses einen Leiterrahmen (2) mit mindestens zwei Anschlussbereichen. In den Anschlussbereichen ist wenigstens ein optoelektronischer Halbleiterchip (4) elektrisch und mechanisch mit dem Leiterrahmen (2) verbunden. Das Halbleiterbauteil (1) beinhaltet ferner einen Vergusskörper (5), der den Halbleiterchip (4) und einen Teil des Leiterrahmens (2) überdeckt. Der Leiterrahmen (2) sowie der Vergusskörper (5) schließen an mindestens einer Längsseite (12) und/oder Kurzseite (14) bündig ab und weisen Vereinzelungsspuren auf. An einer dem Halbleiterchip (4) abgewandten Unterseite (25) des Leiterrahmens (2) verläuft entlang mindestens einer der Längsseiten (12) und/oder der Kurzseiten (14) eine Fase (7). Darüber hinaus wird ein Verfahren zur Herstellung eines solchen Halbleiterbauteils (1) angegeben.
Abstract:
Es wird ein optoelektronisches Halbleiterbauteil angegeben mit - einer Vielzahl von matrixartig angeordneten, strahlungsemittierenden Halbleiterchips (2), wobei die Halbleiterchips (2) auf einem gemeinsamen Träger (1) aufgebracht sind, - zumindest einem Konverterelement (3), das zumindest einen Halbleiterchip (2) zur Konversion von vom Halbleiterchip (2) emittierte elektromagnetische Strahlung nachgeordnet ist, - zumindest einen jeden Halbleiterchip (2) nachfolgendes Streuelement (4) zum diffusen Streuen von vom Halbleiterchip (2) emittierte elektromagnetische Strahlung, wobei das Streuelement (4) mit dem Konverterelement (3) in direktem Kontakt steht.
Abstract:
An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 μm.