公开(公告)号：US12131881B2

公开(公告)日：2024-10-29

申请号：US17718976

申请日：2022-04-12

Applicant: JEOL Ltd.

Inventor： Takeshi Kaneko ,  Norihiro Okoshi ,  Yu Jimbo ,  Sang Tae Park

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/22 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/022 ,  H01J2237/2802

Abstract: A contamination prevention irradiation device includes a generation unit and a mirror unit. The generation unit generates a laser beam. The mirror unit has a mirror surface for reflecting a laser beam. The laser beam reflected on the mirror surface is applied to a specimen disposed inside an objective lens. The laser beam is composed of a pulse train. Once a laser beam is applied to the specimen before observation of the specimen, deposition of contaminants on the specimen can be prevented for a predetermined subsequent period.

公开(公告)号：US20240355578A1

公开(公告)日：2024-10-24

申请号：US18761319

申请日：2024-07-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Te-Sheng WANG ,  Szu-Po WANG ,  Kai-Yuan CHI

IPC: H01J37/22 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/28

Abstract: Disclosed are non-transitory computer-readable media, systems, and computer-implemented methods that describe obtaining hot spot (HS) location information with respect to a printed pattern; obtaining LFP search criteria for searching the printed pattern to determine a local focus point (LFP) for an imaging device; selecting a HS area in the printed pattern that contains a HS; and determining the LFP proximate to the HS area based on the LFP search criteria, the LFP not containing the HS.

公开(公告)号：US12125667B2

公开(公告)日：2024-10-22

申请号：US17638275

申请日：2019-09-20

Applicant: Hitachi High-Tech Corporation

Inventor： Yasuhiro Shirasaki ,  Makoto Sakakibara ,  Momoyo Enyama ,  Hajime Kawano ,  Akira Ikegami

IPC: H01J37/22 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24514 ,  H01J2237/2803

Abstract: A charged particle beam device includes a plurality of detectors configured to detect one or more signal charged particle beams caused by irradiation on a sample with one or more primary charged particle beams, and a control system. The control system is configured to measure an intensity distribution of the one or more signal charged particle beams detected by the plurality of detectors, and correct the intensity distribution by using a correction function. The control system is configured to generate an image based on the corrected intensity distribution.

公开(公告)号：US20240347315A1

公开(公告)日：2024-10-17

申请号：US18582608

申请日：2024-02-20

Applicant: FUJI ELECTRIC CO., LTD.

Inventor： Yusuke SHIMIZU

IPC: H01J37/28 ,  H01J37/22 ,  H01J37/26

CPC classification number: H01J37/28 ,  H01J37/222 ,  H01J37/265 ,  H01J2237/2814

Abstract: Provided is an analysis method for generating, by acquiring for a plurality of set ranges a distribution representative value representing a representative value of a first characteristic and a second characteristic of a plurality of measurement groups included in the same set range, and by approximating a relationship between the distribution representative value and a concentration of a first impurity with a first approximate line including a curved line part, a relationship information indicating a relationship between a value of the set range and the distribution representative value, generating a virtual distribution in which samples of the first characteristic and the second characteristic are distributed in a range that is wider than a measurement distribution by simulating, based on the measurement distribution and the relationship information, the first characteristic and the second characteristic of a plurality of virtual semiconductor devices, and calculating a defect rate in the virtual distribution.

公开(公告)号：US20240339292A1

公开(公告)日：2024-10-10

申请号：US18748758

申请日：2024-06-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Yan REN ,  Marijke SCOTUZZI ,  Albertus Victor Gerardus MANGNUS ,  Erwin Paul SMAKMAN

IPC: H01J37/244 ,  H01J37/10 ,  H01J37/28

CPC classification number: H01J37/244 ,  H01J37/10 ,  H01J37/28

Abstract: There is provided a charged particle device for a charged particle inspection apparatus for projecting an array of sub-beams towards a sample, the charged particle device comprising: a charged particle optical element and a detector. The charged particle optical element has an up-beam surface having a plurality of openings to generate an array of sub-beams from a charged particle beam. In the charged particle optical element are defined: sub-beam apertures and monitoring apertures. The sub-beam aperture extend through the charged particle element for paths of the array of sub-beams towards a sample. The monitoring aperture extends through the charged particle element. The detector is in the monitoring aperture. At least part of the detector is down-beam of the up-beam surface. The detector measures a parameter of a portion of the charged particle beam incident on the detector.

公开(公告)号：US20240331971A1

公开(公告)日：2024-10-03

申请号：US18741204

申请日：2024-06-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Jurgen VAN SOEST ,  Vincent Sylvester KUIPER ,  Yinglong LI

IPC: H01J37/20 ,  H01J37/244 ,  H01J37/28

CPC classification number: H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2001

Abstract: A charged particle assessment apparatus comprising: a charged particle beam device; an actuated sample stage; a hot component and a thermal compensator. The actuated sample stage is configured to hold a sample. The hot component is configured to operate such that, during operation, heat is radiated toward a sample held on the sample holder. The hot component is smaller than the sample. The thermal compensator is configured to heat the sample so as to reduce thermal gradients therein.

公开(公告)号：US20240331969A1

公开(公告)日：2024-10-03

申请号：US18193545

申请日：2023-03-30

Applicant: FEI Company

Inventor： Chad Rue

IPC: H01J37/20 ,  C23C14/14 ,  C23C14/34 ,  H01J37/28 ,  H01J37/305

CPC classification number: H01J37/20 ,  C23C14/14 ,  C23C14/3407 ,  H01J37/28 ,  H01J37/305 ,  H01J2237/081 ,  H01J2237/20214 ,  H01J2237/31749

Abstract: To reduce charging artifacts in electron microscopy, a notched ring of sputterable material can be situated about a sample surface. An ion beam can be directed through a notch at to sputter the sputterable material onto the sample surface. Sputtering can be performed after low-angle focused ion beam (FIB) milling at the same sample tilts. The sample can be rotated about an axis and sputtering performed at multiple rotation angles. Upon sputtering of the conductive coating, the sample can be reoriented and imaged. These steps can be repeated to produce a 2D image stack for 3D image reconstruction.

公开(公告)号：US20240321543A1

公开(公告)日：2024-09-26

申请号：US18572830

申请日：2021-07-01

Applicant: Hitachi High-Tech Corporation

Inventor： Hideyuki KOTSUJI ,  Toshiyuki YOKOSUKA ,  Hajime KAWANO

IPC: H01J37/02 ,  H01J37/20 ,  H01J37/24 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/20 ,  H01J37/24 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/24564

Abstract: The present disclosure provides a charged particle beam device capable of removal or control of an electric charge by plasma without affecting control of the charged particle beam. The charged particle beam device according to the present disclosure is provided with a charged particle beam optical system for emitting a charged particle beam onto a sample, a sample chamber provided with a stage on which the sample is placed, a plasma generating device for generating plasma to be emitted onto the stage so as to remove an electrification charge from the sample, and a coupling member coupling the plasma generating device to the sample chamber, the coupling member including an insulating spacer insulating the sample chamber and the plasma generating device.

公开(公告)号：US20240312760A1

公开(公告)日：2024-09-19

申请号：US18606665

申请日：2024-03-15

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Bjoern Gamm

IPC: H01J37/28 ,  H01J37/24

CPC classification number: H01J37/28 ,  H01J37/24

Abstract: In a method for operating a particle beam microscope, an image of an object region is generated by virtue of a particle beam being directed to a multiplicity of incidence locations within the object region. Particles are detected and a data record is generated. The data record represents the image by a field of pixels, with a position of the pixel in the field representing the incidence location and a pixel value of the pixel representing an intensity of the detected particles at the incidence location. In order to generate an image with an increased number of pixels, at least two images of the object region are generated in succession with a fewer number of pixels and the data records representing the at least two images are supplied to an image processing program which generates the data record representing the image with the greater number of pixels therefrom.

公开(公告)号：US20240312758A1

公开(公告)日：2024-09-19

申请号：US18571186

申请日：2022-05-30

Applicant: ASML Netherlands B.V. ,  HERMES MICROVISION CO. LTD. (BEIJING)

Inventor： Zheng FAN ,  Bruno LA FONTAINE ,  He Sheng LU ,  Gao Xing YIN ,  Shun ZHANG ,  Zhenfeng ZHAO

IPC: H01J37/24 ,  H01J37/065 ,  H01J37/28

CPC classification number: H01J37/243 ,  H01J37/065 ,  H01J37/28 ,  H01J2237/04735 ,  H01J2237/24535

Abstract: Apparatuses, systems, and methods for adjusting beam current using a feedback loop are provided. In some embodiments, a system may include a first anode aperture configured to measure a current of an emitted beam during inspection of a sample, wherein the first anode aperture is positioned in an environment that is configured to support a vacuum pressure of less than 3×10−10 torr and a controller including circuitry configured to cause the system to perform: generating a feedback signal when a difference between the measured current and a setpoint current exceeds a threshold value and adjusting a voltage of an extractor voltage supply based on the feedback signal during inspection of the sample such that a difference between an adjusted current of the emitted beam and the setpoint current is below the threshold value.