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    CATHODOLUMINESCENCE FOCAL SCANS TO CHARACTERIZE 3D NAND CH PROFILE
    101.
    发明公开
    CATHODOLUMINESCENCE FOCAL SCANS TO CHARACTERIZE 3D NAND CH PROFILE 审中-公开

    公开(公告)号：US20230221112A1

    公开(公告)日：2023-07-13

    申请号：US17574055

    申请日：2022-01-12

    Applicant: Applied Materials Israel Ltd.

    Inventor： David Goldovsky ,  Ido Almog ,  Ronny Barnea

    IPC: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

    CPC classification number: G01B15/04 ,  H01J37/28 ,  H01J37/244 ,  H01J37/285

    Abstract: Disclosed herein is a system for profiling holes in non-opaque samples. The system includes: (i) an e-beam source configured to project an e-beam into an inspection hole in a sample, such that a wall of the inspection hole is struck and a localized electron cloud is produced; (ii) a light sensing infrastructure configured to sense cathodoluminescent light, generated by the electron cloud; and (iii) a computational module configured to analyze the measured signal to obtain the probed depth at which the wall was struck. A lateral offset, and/or orientation, of the e-beam is controllable, so as to allow generating localized electron clouds at each of a plurality of depths inside the inspection hole, and thereby obtain information at least about a two-dimensional geometry of the inspection hole.

    X-ray detection apparatus and method
    102.
    发明授权
    X-ray detection apparatus and method 有权

    公开(公告)号：US11699567B2

    公开(公告)日：2023-07-11

    申请号：US17534865

    申请日：2021-11-24

    Applicant: JEOL Ltd.

    Inventor： Takanori Murano

    IPC: H01J37/28 ,  H01J37/244

    CPC classification number: H01J37/28 ,  H01J37/244 ,  H01J2237/2446 ,  H01J2237/2801

    Abstract: A mask member is provided at an entrance opening of a mirror unit. Of a first diffraction grating and a second diffraction grating, when the second diffraction grating is used, the mask member masks preceding mirrors. With this process, aberration caused by reflective X-ray is suppressed. When the first diffraction grating is used, the mask member does not function. Alternatively, the mask member and another mask member may be selectively used.

    METHOD FOR OPERATING A MULTI-BEAM PARTICLE BEAM MICROSCOPE
    103.
    发明公开
    METHOD FOR OPERATING A MULTI-BEAM PARTICLE BEAM MICROSCOPE 审中-公开

    公开(公告)号：US20230215686A1

    公开(公告)日：2023-07-06

    申请号：US18181395

    申请日：2023-03-09

    Applicant: Carl Zeiss MultiSEM GmbH

    Inventor： Dirk Zeidler ,  Gregor Dellemann ,  Gunther Scheunert

    IPC: H01J37/244 ,  H01J37/28

    CPC classification number: H01J37/244 ,  H01J37/28 ,  H01J2237/2443 ,  H01J2237/2445 ,  H01J2237/2446 ,  H01J2237/24495 ,  H01J2237/24578

    Abstract: A method for operating a multi-beam particle beam microscope includes: scanning a multiplicity of particle beams over an object; directing electron beams emanating from impingement locations of the particle beams at the object onto an electron converter; detecting first signals generated by impinging electrons in the electron converter via a plurality of detection elements of a first detection system during a first time period; detecting second signals generated by impinging electrons in the electron converter via a plurality of detection elements of a second detection system during a second time period; and assigning to the impingement locations the signals which were detected via the detection elements of the first detection system during the first time period, for example on the basis of the detection signals which were detected via the detection elements of the second detection system during the second time period.

    ALIGNMENT DETERMINATION METHOD AND COMPUTER PROGRAM
    104.
    发明公开
    ALIGNMENT DETERMINATION METHOD AND COMPUTER PROGRAM 审中-公开

    公开(公告)号：US20230207259A1

    公开(公告)日：2023-06-29

    申请号：US18088499

    申请日：2022-12-23

    Applicant: ASML Netherlands B.V.

    Inventor： Erwin SLOT ,  Niels VERGEER ,  Vincent Sylvester KUIPER

    IPC: H01J37/304 ,  H01J37/28

    CPC classification number: H01J37/3045 ,  H01J37/28 ,  H01J2237/1501

    Abstract: The present invention concerns a method of determining alignment of electron optical components in a charged particle apparatus. The charged particle apparatus comprising: an aperture array and a detector configured to detect charged particles corresponding to beamlets that pass through the corresponding apertures in the aperture array. The method comprises: scanning each beamlet in a plane of the aperture array over a portion of the aperture array in which a corresponding aperture of the aperture array is defined so that charged particles of each beamlet may pass through the corresponding aperture; detecting during the scan any charged particles corresponding to each beamlet that passes through the corresponding aperture; generating a detection pixel for each beamlet based on the detection of charged particles corresponding to each beamlet at intervals of the scan; and collecting information comprised in the detection pixel such as the intensity of charged particles.

    Charged Particle Beam Apparatus
    105.
    发明公开
    Charged Particle Beam Apparatus 审中-公开

    公开(公告)号：US20230170182A1

    公开(公告)日：2023-06-01

    申请号：US17921737

    申请日：2020-04-28

    Applicant: Hitachi High-Tech Corporation

    Inventor： Kazufumi YACHI ,  Muneyuki FUKUDA ,  Ichiro TACHIBANA ,  Hiroya OHTA

    IPC: H01J37/28 ,  H01J37/244 ,  H01J37/145

    CPC classification number: H01J37/28 ,  H01J37/145 ,  H01J37/244 ,  H01J2237/057 ,  H01J2237/2806

    Abstract: Proposed is a charged particle beam apparatus for the purpose of detecting a charged particle emitted from a sample in a specific direction by discriminating between the charged particle and a charged particle emitted in another direction. As one aspect of achieving the above purpose, proposed is a charged particle beam apparatus including an objective lens configured to focus a beam emitted from a charged particle source, a detector (8) configured to detect at least one of a first charged particle (23) emitted from a sample by irradiating the sample with the beam and a second charged particle emitted from a charged particle collided member by causing the first charged particle to collide with the charged particle collision member disposed on a trajectory of the first charged particle, and an electrostatic lens (12) including a plurality of electrodes disposed between the objective lens and the detector, in which the electrostatic lens is a Butler type.

    Offcut angle determination using electron channeling patterns
    109.
    发明授权
    Offcut angle determination using electron channeling patterns 有权

    公开(公告)号：US11650171B2

    公开(公告)日：2023-05-16

    申请号：US17357409

    申请日：2021-06-24

    Applicant: FEI Company

    Inventor： Han Han ,  Libor Strakos ,  Thomas Hantschel ,  Tomas Vystavel ,  Clement Porret

    IPC: H01J37/244 ,  G01N23/203 ,  H01J37/28

    CPC classification number: G01N23/203 ,  H01J37/244 ,  H01J37/28 ,  G01N2223/6116

    Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

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