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    Scanning electron microscope and method of controlling same
    111.
    发明授权
    Scanning electron microscope and method of controlling same 有权
    扫描电子显微镜及其控制方法

    公开(公告)号：US07161149B2

    公开(公告)日：2007-01-09

    申请号：US10603433

    申请日：2003-06-25

    Applicant: Hiroyoshi Kazumori

    Inventor： Hiroyoshi Kazumori

    IPC: G01N23/00

    CPC classification number: H01J37/28 ,  G01N23/2251 ,  H01J37/145 ,  H01J2237/024 ,  H01J2237/026 ,  H01J2237/20207 ,  H01J2237/2809

    Abstract: A scanning electron microscope has an electron gun producing the electron beam, an objective lens for sharply focusing the beam onto the specimen, a tilting mechanism for tilting the specimen relative to the beam, and a power supply for applying the negative voltage to the specimen. This microscope further includes a cylindrical shield electrode mounted to surround the electron beam path between the objective lens and specimen. A front-end electrode is insulatively mounted to the front-end portion of the shield electrode that is on the specimen side. An electric potential substantially identical to the electric potential at the polepieces of the objective lens is applied to the shield electrode. An electric potential substantially identical to the potential at the specimen is applied to the front-end electrode.

    Abstract translation: 扫描电子显微镜具有产生电子束的电子枪，用于将光束聚焦到样本上的物镜，用于使样本相对于光束倾斜的倾斜机构，以及向样本施加负电压的电源。 该显微镜还包括安装成围绕物镜和样品之间的电子束路径的圆柱形屏蔽电极。 前端电极被绝缘地安装在屏蔽电极的在试样侧的前端部分。 将与物镜的极点处的电位基本相同的电位施加到屏蔽电极。 将与试样电位基本相同的电位施加到前端电极。

    Charged particle beam apparatus, charged particle beam control method, substrate inspection method and method of manufacturing semiconductor device
    114.
    发明申请
    Charged particle beam apparatus, charged particle beam control method, substrate inspection method and method of manufacturing semiconductor device 有权
    带电粒子束装置，带电粒子束控制方法，衬底检查方法和制造半导体器件的方法

    公开(公告)号：US20050199827A1

    公开(公告)日：2005-09-15

    申请号：US11038161

    申请日：2005-01-21

    Applicant: Osamu Nagano

    Inventor： Osamu Nagano

    IPC: G21K1/087 ,  A61N5/00 ,  G01N23/00 ,  G03F7/20 ,  G21K1/093 ,  G21K5/04 ,  H01J37/147 ,  H01J37/153 ,  H01L21/027 ,  H01L21/66

    CPC classification number: H01J37/147 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/024 ,  H01J2237/1536 ,  H01J2237/28 ,  H01J2237/3175

    Abstract: A charged particle beam apparatus includes: a charged particle beam generator which generates a charged particle beam; a projection optical system which generates a lens field to focus the charged particle beam on an external substrate; and deflectors arranged so as to surround an optical axis of the charged particle beam; the deflectors generating a deflection field which is superposed on the lens field to deflect the charged particle beam and to control a position to irradiate the substrate, and being configured so that intensity of the deflection field in a direction of the optical axis is changed in accordance with an angle with which the charged particle beam should fall onto the substrate.

    Abstract translation: 带电粒子束装置包括：产生带电粒子束的带电粒子束发生器; 投影光学系统，其产生将带电粒子束聚焦在外部基板上的透镜场; 以及偏转器，其布置成围绕带电粒子束的光轴; 所述偏转器产生偏转场，所述偏转场叠加在所述透镜场上以偏转所述带电粒子束并控制照射所述衬底的位置，并且被配置为使得沿所述光轴的方向的所述偏转场的强度根据 与带电粒子束应该落在基底上的角度。

    Charged beam apparatus
    115.
    发明授权
    Charged beam apparatus 失效
    带电束装置

    公开(公告)号：US5591970A

    公开(公告)日：1997-01-07

    申请号：US527583

    申请日：1995-09-13

    Applicant: Haruki Komano ,  Akira Matsuura ,  Hiroko Nakamura ,  Kazuyoshi Sugihara

    Inventor： Haruki Komano ,  Akira Matsuura ,  Hiroko Nakamura ,  Kazuyoshi Sugihara

    IPC: G01Q30/08 ,  G03F1/30 ,  G03F1/72 ,  G03F1/74 ,  H01J37/305 ,  H01L21/203 ,  H01L21/302 ,  H01L21/31 ,  H01L21/316 ,  H01J37/30

    CPC classification number: H01J37/3056 ,  H01J2237/006 ,  H01J2237/024 ,  H01J2237/31744

    Abstract: A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.

    Abstract translation: 本发明的充电光束装置包括：样品台，放置样品的样品台;用于在样品表面照射带电束的色谱柱;气体供给机构，具有用于将气体注入照射位置的气体供给口 带电束，以及用于使气体供给开口平行于样品表面移动以便定位气体供应开口的驱动机构，并且使气体供给开口垂直于样品的表面移动，以设定距离 气体供应开口到处理位置。 这样可以在加工位置高精度地稳定地保持气体压力。 因此，可以高精度地进行期望的沉积或蚀刻，这进一步提高了掩模的质量。

    Electron image projector
    116.
    发明授权
    Electron image projector 失效
    电子图像投影机

    公开(公告)号：US4939373A

    公开(公告)日：1990-07-03

    申请号：US883007

    申请日：1986-07-07

    Applicant: Thomas V. Elliston ,  Julian P. Scott ,  Rodney Ward

    Inventor： Thomas V. Elliston ,  Julian P. Scott ,  Rodney Ward

    IPC: H01J37/06 ,  H01J1/46 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J1/46 ,  H01J37/3007 ,  H01J37/3175 ,  H01J2237/024 ,  H01J2237/04735 ,  H01J2237/31779

    Abstract: An electron image projector for projecting mask patterns with unity magnification onto a semiconductor slice comprises a cathode from which emitted electrons are accelerated by a uniform electric field and focussed by a uniform magnetic field onto a target. To reduce the dependency of electron trajectories on the local shape and disposition of the target, the uniform electric field is applied by an accelerating voltage between the cathode and a grid electrode acting as the anode between the cathode and target. The grid is positioned at a first magnetic focus, and the target is positioned at a second magnetic focus of the uniform magnetic field. A small voltage much less than the accelerating voltage may be applied between the grid and the target to obtain correct focussing. Structure is also provided to move the grid parallel to the target during exposure in order to prevent the grid pattern from being reproduced on the target. A backscattered electron detector positioned adjacent the field-free region between the grid and the target may be used to control alignment of the projected image with the target.

    Abstract translation: 用于将单位倍率的掩模图案投影到半导体片上的电子图像投影仪包括阴极，发射的电子通过均匀的电场加速并且被均匀的磁场聚焦到目标上。 为了减小电子轨迹对目标的局部形状和配置的依赖性，通过阴极和作为阴极和靶之间的阳极的栅电极之间的加速电压施加均匀的电场。 栅格位于第一磁焦点处，并且目标位于均匀磁场的第二磁焦点处。 可以在栅格和目标之间施加小于加速电压的小电压以获得正确的聚焦。 还提供结构以在曝光期间平行于目标移动网格，以防止网格图案在目标上再现。 位于栅格和靶之间的无场区域附近的背散射电子检测器可用于控制投影图像与目标的对准。

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