公开(公告)号：US20160229691A1

公开(公告)日：2016-08-11

申请号：US15023057

申请日：2014-12-04

Applicant: CSMC TECHNOLOGIES FABI CO., LTD.

Inventor： Errong JING

IPC: B81C1/00

CPC classification number: B81C1/00142 ,  B81C2201/0108 ,  B81C2201/0109 ,  B81C2201/013

Abstract: A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.

Abstract translation: 制造薄膜支撑梁的方法包括：提供具有相对的第一和第二表面的基底; 在衬底的第一表面上涂覆牺牲层，并对牺牲层进行构图; 在所述牺牲层上沉积介电膜以形成电介质膜层，并在所述电介质膜层上沉积金属膜以形成金属膜层; 图案化金属膜层，并将金属膜层的图案区域划分成支撑梁部分的金属膜图案和非支撑梁部分的金属膜图案，其中支撑件的金属膜图案的宽度 光束部分大于最终支撑光束图案的宽度，并且非支撑光束部分的金属膜图案的宽度等于此时的最终非支撑光束图案的宽度的宽度; 在金属膜层和电介质膜层上进行光蚀刻和蚀刻，以获得最终的支撑束图案，最终的非支撑束图案和最终的电介质膜层，其中最终的电介质膜层用作最终支撑体的支撑膜 光束图案和最终的非支撑光束图案; 并去除牺牲层。

公开(公告)号：US09351081B2

公开(公告)日：2016-05-24

申请号：US13779210

申请日：2013-02-27

Applicant: Texas Instruments Incorporated

Inventor： Peter B Johnson ,  Ira Oaktree Wygant

IPC: H02N1/00 ,  H04R19/00 ,  B06B1/02

CPC classification number: B06B1/0292 ,  B06B2201/76 ,  B81B7/007 ,  B81B2203/0127 ,  B81B2207/096 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/036 ,  H02N1/006 ,  H04R19/005 ,  H05K2201/09845 ,  H05K2201/09863

Abstract: A Capacitive Micromachined Ultrasonic Transducer (CMUT) device includes at least one CMUT cell including a first substrate of a single crystal material having a top side including a patterned dielectric layer thereon including a thick and a thin dielectric region, and a through-substrate via (TSV) extending a full thickness of the first substrate. The TSV is formed of the single crystal material, is electrically isolated by isolation regions in the single crystal material, and is positioned under a top side contact area of the first substrate. A membrane layer is bonded to the thick dielectric region and over the thin dielectric region to provide a movable membrane over a micro-electro-mechanical system (MEMS) cavity. A metal layer is over the top side substrate contact area and over the movable membrane including coupling of the top side substrate contact area to the movable membrane.

Abstract translation: 电容式微加工超声波传感器（CMUT）装置包括至少一个CMUT单元，其包括单晶材料的第一基板，其具有包括厚和薄的电介质区域的在其上的图案化电介质层的顶侧，以及贯穿基板通孔 TSV）延伸第一基板的整个厚度。 TSV由单晶材料形成，通过单晶材料中的隔离区电隔离，并且位于第一基板的顶侧接触区域的下方。 膜层结合到厚电介质区域和薄介电区域上，以在微机电系统（MEMS）腔体上提供可移动膜。 金属层在顶侧基板接触区域上方并且在可移动膜上方，包括顶侧基板接触区域与可动膜的耦合。

公开(公告)号：US20160122183A1

公开(公告)日：2016-05-05

申请号：US14529410

申请日：2014-10-31

Applicant: General Electric Company

Inventor： CHRISTOPHER KAPUSTA ,  MARCO FRANCESCO AIMI

IPC: B81C1/00 ,  C23C28/02

CPC classification number: C23C28/023 ,  B23K1/0016 ,  B23K35/0222 ,  B23K35/262 ,  B23K35/3013 ,  B23K2101/40 ,  B81C1/00269 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/019 ,  B81C2203/037 ,  C23C14/025 ,  C23C14/165 ,  C23C14/3414 ,  C23C14/58 ,  C23C28/021 ,  C23F1/00 ,  C23F4/00 ,  C25D3/50 ,  C25D7/123

Abstract: A non-magnetic lid for sealing a hermetic package. The lid includes a molybdenum substrate having a sputtered adhesion layer and a copper seed layer. The lid also includes a plated palladium solder base layer, and has gold/tin solder preforms attached to a sealing surface of the lid.

Abstract translation: 用于密封密封包装的非磁性盖。 盖包括具有溅射粘附层和铜籽晶层的钼基板。 盖子还包括镀钯钯基底层，并且具有附着到盖的密封表面上的金/锡焊料预成型件。

公开(公告)号：US09315609B2

公开(公告)日：2016-04-19

申请号：US14104304

申请日：2013-12-12

Applicant: Micron Technology, Inc.

Inventor： Dan B. Millward ,  Timothy A. Quick

IPC: C08F299/02 ,  C08F299/04 ,  H01L21/311 ,  B81C1/00 ,  B82Y30/00 ,  H01L21/033 ,  G03F7/00

CPC classification number: H01L21/76828 ,  B81C1/00031 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2201/0198 ,  B82Y30/00 ,  C08F299/02 ,  C08F299/0492 ,  G03F7/0002 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76877

Abstract: Methods for fabricating sub-lithographic, nanoscale microstructures utilizing self-assembling block copolymers, and films and devices formed from these methods are provided.

Abstract translation: 提供了使用自组装嵌段共聚物制备亚光刻，纳米尺度微结构的方法，以及由这些方法形成的膜和器件。

公开(公告)号：US20160096728A1

公开(公告)日：2016-04-07

申请号：US14966562

申请日：2015-12-11

Applicant: Yu-Fu Kang ,  Chiung-Cheng Lo

Inventor： Yu-Fu Kang ,  Chiung-Cheng Lo

IPC: B81C1/00

CPC classification number: B81C1/00285 ,  B81B7/0038 ,  B81B7/02 ,  B81B2207/015 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0792

Abstract: A MEMS chip includes a cap layer and a composite device layer. The cap layer includes a substrate. The substrate has a first region and a second region, wherein the first region includes plural first trenches and the second region has plural second trenches. The first region has a first etch pattern density and the second region has a second etch pattern density, wherein the first etch pattern density is higher than the second etch pattern density to form chambers of different pressures.

公开(公告)号：US20160091713A1

公开(公告)日：2016-03-31

申请号：US14502255

申请日：2014-09-30

Applicant: PIXTRONIX, INC.

Inventor： Teruo Sasagawa

IPC: G02B26/02 ,  G09G5/10 ,  B81C1/00

CPC classification number: G02B26/02 ,  B81B2201/047 ,  B81C1/00039 ,  B81C1/00142 ,  B81C1/0015 ,  B81C1/00952 ,  B81C2201/013 ,  B81C2201/016 ,  G02B26/0841 ,  G02B26/0858 ,  G09G3/3433 ,  G09G5/10 ,  G09G2300/04

Abstract: This disclosure provides systems, methods and apparatus including devices that include a layer of passivation material covering at least a portion of an exterior surface of a thin film component within a microelectomechanical device. The thin film component may include an electrically conductive layer that connects via an anchor to a conductive surface on a substrate. The disclosure further provides processes for providing a layer of passivation material on an exterior surface of a thin film component and for electrically connecting that thin film component to a conductive surface on a substrate.

Abstract translation: 本公开提供了包括装置的系统，方法和装置，其包括覆盖微机电装置内的薄膜部件的外表面的至少一部分的钝化材料层。 薄膜部件可以包括通过锚固件连接到基板上的导电表面的导电层。 本公开还提供了在薄膜部件的外表面上提供钝化材料层并将该薄膜部件电连接到基板上的导电表面的方法。

公开(公告)号：US09264833B2

公开(公告)日：2016-02-16

申请号：US13973812

申请日：2013-08-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Yao-Te Huang ,  Chin-Yi Cho ,  Li-Min Hung ,  Chun-Wen Cheng

IPC: H04R19/04 ,  H04R31/00 ,  H04R19/00

CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate; a silicon oxide layer formed on one side of the first silicon substrate; a second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates; and a diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates, wherein the first plate and the diaphragm are configured to form a capacitive microphone.

Abstract translation: 本公开提供了集成麦克风结构的一个实施例。 集成麦克风结构包括图案化为第一板的第一硅衬底; 形成在所述第一硅衬底的一侧上的氧化硅层; 第二硅衬底，通过所述氧化硅层与所述第一衬底接合，使得所述氧化硅层夹在所述第一和第二硅衬底之间; 以及隔膜，其固定在所述氧化硅层上并且设置在所述第一和第二硅衬底之间，其中所述第一板和所述隔膜被构造成形成电容式麦克风。

公开(公告)号：US20150344292A1

公开(公告)日：2015-12-03

申请号：US14307259

申请日：2014-06-17

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Jung Won Lee ,  Jong Woon Kim ,  Seung Hun Han ,  Min Kyu Choi

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C2201/013 ,  G01P15/09 ,  G01P2015/084

Abstract: Disclosed herein is a MEMS component including: a membrane; a mass body connected to the membrane; and a support connected to the membrane and supporting the mass body in a floated state to be displaced, wherein the membrane has an upper electrode and an upper piezoelectric material disposed on one side thereof and has a lower electrode and a lower piezoelectric material disposed on the other side thereof, based on an insulating adhesive layer.

Abstract translation: 本文公开了一种MEMS部件，包括：膜; 连接到膜的质量体; 以及支撑体，其连接到所述膜并且以悬浮状态支撑所述质量体以被移位，其中所述膜具有设置在其一侧上的上电极和上压电材料，并且具有设置在所述膜上的下电极和下压电材料 其另一侧，基于绝缘粘合剂层。

公开(公告)号：US20150291415A1

公开(公告)日：2015-10-15

申请号：US14137538

申请日：2013-12-20

Applicant: Sarah K. HANEY ,  Weng Hong TEH ,  Feras EID ,  Sasha N. OSTER

Inventor： Sarah K. HANEY ,  Weng Hong TEH ,  Feras EID ,  Sasha N. OSTER

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0041 ,  B81B7/0032 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00293 ,  B81C1/00539 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0136 ,  B81C2203/0792

Abstract: Embodiments of the invention describe hermetic encapsulation for MEMS devices, and processes to create the hermetic encapsulation structure. Embodiments comprise a MEMS substrate stack that further includes a magnet, a first laminate organic dielectric film, a first hermetic coating disposed over the magnet, a second laminate organic dielectric film disposed on the hermetic coating, a MEMS device layer disposed over the magnet, and a plurality of metal interconnects surrounding the MEMS device layer. A hermetic plate is subsequently bonded to the MEMS substrate stack and disposed over the formed MEMS device layer to at least partially form a hermetically encapsulated cavity surrounding the MEMS device layer. In various embodiments, the hermetically encapsulated cavity is further formed from the first hermetic coating, and at least one of the set of metal interconnects, or a second hermetic coating deposited onto the set of metal interconnects.

Abstract translation: 本发明的实施例描述了用于MEMS器件的气密封装和用于创建气密封装结构的工艺。 实施例包括进一步包括磁体的MEMS基板堆叠，第一层压有机介电膜，设置在磁体上的第一密封涂层，设置在密封涂层上的第二层压有机绝缘膜，设置在磁体上的MEMS器件层，以及 围绕MEMS器件层的多个金属互连。 密封板随后结合到MEMS衬底叠层并且设置在所形成的MEMS器件层上，以至少部分地形成围绕MEMS器件层的气密封装的腔体。 在各种实施例中，气密封装的空腔进一步由第一密封涂层形成，并且该组金属互连中的至少一个或沉积在该组金属互连件上的第二密封涂层。

公开(公告)号：US20150289046A1

公开(公告)日：2015-10-08

申请号：US14275337

申请日：2014-05-12

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen

IPC: H04R1/08

CPC classification number: H04R31/003 ,  B81B3/0021 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/04 ,  B81C1/00158 ,  B81C2201/013 ,  H04R1/08 ,  H04R19/005 ,  H04R31/006 ,  H04R2201/003

Abstract: A MEMS device includes a backplate electrode and a membrane disposed spaced apart from the backplate electrode. The membrane includes a displaceable portion and a fixed portion. The backplate electrode and the membrane are arranged such that an overlapping area of the fixed portion of the membrane with the backplate electrode is less than maximum overlapping.

Abstract translation: MEMS器件包括背板电极和与背板电极间隔开设置的膜。 膜包括可移位部分和固定部分。 背板电极和膜被布置成使得膜的固定部分与背板电极的重叠区域小于最大重叠。