公开(公告)号：US09677934B2

公开(公告)日：2017-06-13

申请号：US14470875

申请日：2014-08-27

Applicant: Thermo Electron Manufacturing Limited

Inventor： Stephen Hartwell ,  Nigel Cooper Bailey

IPC: G01J3/36 ,  G01J3/02 ,  G01J3/443 ,  G01J3/28

CPC classification number: G01J3/0297 ,  G01J3/28 ,  G01J3/443

Abstract: A method for deriving a background-corrected portion of a measured optical emission spectrum comprising the steps of identifying two or more background correction points from the portion of the measured emission spectrum; deriving a background correction function fitted to the identified background correction points, and applying the background correction function to the portion of the measured emission spectrum so as to produce a background-corrected portion of the emission spectrum, wherein the background correction points are identified from the measured data points by consideration of the gradients between the measured data points.

公开(公告)号：US09664564B2

公开(公告)日：2017-05-30

申请号：US14381742

申请日：2013-02-26

Applicant: KYOTO UNIVERSITY

Inventor： Hiroyuki Yoshida

IPC: G01J3/30 ,  G01J3/443 ,  G01N23/225 ,  G01N21/66 ,  H01J37/06

CPC classification number: G01J3/30 ,  G01J3/443 ,  G01N21/66 ,  G01N23/2251 ,  G01N2223/08 ,  H01J37/06

Abstract: Intensity of near-ultraviolet light or visible light of 180 to 700 nm emitted from a solid sample, such as an organic semiconductor, irradiated with an electron beam is measured, while kinetic energy (accelerating energy) of the electron beam is changed in a range of 0 to 5 eV so as to obtain a spectrum. Peaks are detected from the spectrum, and the energy thereof is defined as unoccupied-states energy of the sample. The onset energy of the first peak represents electronic affinity energy (electron affinity) of the sample. Since the energy of the electron beam irradiated onto the sample is 5 eV or less, almost no damage is exerted on the sample even when the sample is an organic semiconductor.

公开(公告)号：US09648719B2

公开(公告)日：2017-05-09

申请号：US14825325

申请日：2015-08-13

Applicant: SHIMADZU CORPORATION

Inventor： Toshiya Habu

IPC: G01J3/02 ,  H01J37/244 ,  H01J37/32 ,  H05H1/00 ,  H05H1/36 ,  H05H1/46

CPC classification number: G01J3/10 ,  G01J3/027 ,  G01J3/443 ,  H01J37/244 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32183 ,  H05H1/0037 ,  H05H1/36 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4682

Abstract: A high-frequency input voltage and a high-frequency input current to a series resonant circuit are detected by a voltage detection unit and a current detection unit, respectively, and plasma input power is detected by a plasma input power detection unit based on the detected high-frequency input voltage and high-frequency input current. By directly detecting the plasma input power in this manner, the plasma input power may be accurately controlled regardless of the state of a plasma-generating gas or an analysis sample. Also, use of a switching circuit including a semiconductor device allows an inexpensive configuration compared with a configuration where a vacuum tube or the like is used.

公开(公告)号：US09606065B2

公开(公告)日：2017-03-28

申请号：US14104888

申请日：2013-12-12

Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sungho Jeong ,  Jeonghwan In ,  Chan Kyu Kim ,  Seokhee Lee

IPC: G01N21/71 ,  G01J3/443 ,  G01J3/28

CPC classification number: G01N21/718 ,  G01J3/28 ,  G01J3/443

Abstract: Disclosed herein is a quantitative analysis method for measuring a target element in a specimen using laser-induced plasma spectrum. More particularly, the present invention relates to a method for analyzing a composition ratio of a target element by calculating peak intensities when peaks overlap each other in a spectrum, and a method for selecting a peak of a wavelength at which the highest precision and reproducibility are secured through linearity of a correlation plot of the peak intensities and a value by dividing a standard deviation value of calibration curve data (peak intensity ratios) by a slope when an internal standard method is used for quantitative analysis of a target element.

公开(公告)号：US20170074800A1

公开(公告)日：2017-03-16

申请号：US15312428

申请日：2015-05-20

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  UNIVERSITE PIERRE ET MARIE CURIE (PARIS 6)

Inventor： Malek BENMANSOUR ,  Rafik BENRABBAH ,  Jean-Paul GARANDET ,  Daniel MORVAN

IPC: G01N21/71 ,  G01N33/20

CPC classification number: G01N21/718 ,  G01J3/443 ,  G01N21/8507 ,  G01N33/20

Abstract: A device for analyzing at least one oxidizable molten metal using a LIBS technique, including: a LIBS analyzer; a mechanical rotary mechanism stirring a liquid bath of the at least one oxidizable molten metal, and including a central section, to be positioned above the liquid bath of the at least one oxidizable molten metal, including an internal cavity forming an analysis chamber, the central section including a first end connected to the LIBS analyzer, and a plurality of mechanical stirring paddles to be partially submerged in the liquid bath of the at least one oxidizable molten metal and that are connected to a second end of the central section opposite the first end of the central section, the LIBS analyzer configured to allow the surface of the at least one oxidizable molten metal located in the portion plumb with the internal cavity of the central portion to be analyzed.

Abstract translation: 一种用于使用LIBS技术分析至少一种可氧化熔融金属的装置，包括：LIBS分析仪; 搅拌所述至少一种可氧化熔融金属的液体浴并且包括中心部分的机械旋转机构，其被定位在所述至少一种可氧化熔融金属的液槽上方，包括形成分析室的内部空腔，所述中心部分 该部分包括连接到LIBS分析器的第一端和多个机械搅拌桨，以部分浸没在所述至少一种可氧化熔融金属的液槽中，并且连接到与第一端相对的中心部分的第二端 中心部分的LIBS分析器被配置为允许位于具有中心部分的内腔的部分铅中的至少一个可氧化熔融金属的表面被分析。

公开(公告)号：US20170067779A1

公开(公告)日：2017-03-09

申请号：US15233595

申请日：2016-08-10

Applicant: Samsung Electronics Co., Ltd. ,  Industry-Academic Cooperation Foundation, Yonsei University

Inventor： In-joong Kim ,  llgu Yun

IPC: G01J3/02 ,  G02B5/20 ,  G01J3/443 ,  G02B7/02

CPC classification number: G01J3/0208 ,  G01J3/0218 ,  G01J3/0229 ,  G01J3/024 ,  G01J3/443 ,  G02B5/205 ,  G02B7/021 ,  H01J37/32972 ,  H01J37/3299 ,  H01L21/67253

Abstract: Provided are a tube-type lens usable for accurately detecting a plasma state in a plasma process, an optical emission spectroscopy (OES) apparatus including the tube-type lens, a plasma monitoring system including the OES apparatus, and a method of manufacturing a semiconductor device by using the plasma monitoring system. The tube-type lens includes: a cylindrical tube; a first lens disposed at an entrance of the cylindrical tube, on which light is incident, the first lens including a central portion which prevents transmission of the light and a second lens disposed at an exit of the cylindrical tube, from which the light exits.

Abstract translation: 提供了一种可用于精确检测等离子体处理中的等离子体状态的管式透镜，包括管式透镜的光发射光谱（OES）装置，包括OES装置的等离子体监视系统以及半导体制造方法 装置采用等离子体监测系统。 管式透镜包括：圆柱形管; 第一透镜，设置在圆柱形管的入口处，光入射，第一透镜包括防止光的透射的中心部分和设置在圆柱形管的出口处的第二透镜，光从该光出射。

公开(公告)号：US09494463B2

公开(公告)日：2016-11-15

申请号：US14293405

申请日：2014-06-02

Applicant: Thermo Scientific Portable Analytical Instruments Inc.

Inventor： Mark A. Hamilton

IPC: G01J3/04 ,  G01J3/02 ,  G01J3/443 ,  G01J3/06

CPC classification number: G01J3/0229 ,  G01J3/0237 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/0272 ,  G01J3/0289 ,  G01J3/0291 ,  G01J3/04 ,  G01J3/06 ,  G01J3/443

Abstract: An optical emission spectroscopic (OES) instrument includes a spectrometer, a processor and an adjustable mask controlled by the processor. The adjustable mask defines a portion of an analytical gap imaged by the spectrometer. The instrument automatically adjusts the size and position of an opening in the mask, so the spectrometer images an optimal portion of plasma formed in the analytical gap, thereby improving signal and noise characteristics of the instrument, without requiring tedious and time-consuming manual adjustment of the mask during manufacture or use.

Abstract translation: 光发射光谱（OES）仪器包括光谱仪，处理器和由处理器控制的可调掩模。 可调节掩模定义了由光谱仪成像的分析间隙的一部分。 仪器自动调整面罩开口的尺寸和位置，因此光谱仪将分析间隙中形成的等离子体的最佳部分图像化，从而提高仪器的信号和噪声特性，而不需要繁琐乏味的手动调节 面具在制造或使用过程中。

公开(公告)号：US09482577B2

公开(公告)日：2016-11-01

申请号：US14494315

申请日：2014-09-23

Applicant: University of Virginia Patent Foundation

Inventor： Brooks Hart Pate ,  Justin L. Neill

IPC: G01J3/30 ,  G01J3/443 ,  G01J3/28 ,  G01J3/433 ,  G01J3/453 ,  G01N21/35 ,  G01N21/3586

CPC classification number: G01J3/443 ,  G01J3/2889 ,  G01J3/4338 ,  G01J3/453 ,  G01N21/35 ,  G01N21/3586 ,  G01N2021/3595

Abstract: An emission can be obtained from a sample in response to excitation using a specified range of excitation frequencies. Such excitation can include generating a specified chirped waveform and a specified downconversion local oscillator (LO) frequency using a digital-to-analog converter (DAC), upconverting the chirped waveform via mixing the chirped waveform with a specified upconversion LO frequency, frequency multiplying the upconverted chirped waveform to provide a chirped excitation signal for exciting the sample, receiving an emission from sample, the emission elicited at least in part by the chirped excitation signal, and downconverting the received emission via mixing the received emission with a signal based on the specified downconversion LO signal to provide a downconverted emission signal within the bandwidth of an analog-to-digital converter (ADC). The specified chirped waveform can include a first chirped waveform during a first duration, and a second chirped waveform during a second duration.

Abstract translation: 可以使用特定范围的激发频率响应于激发而从样品获得发射。 这种激励可以包括使用数模转换器（DAC）产生指定的啁啾波形和指定的下变频本地振荡器（LO）频率，通过将啁啾波形与指定的上变频LO频率混频来上变频啁啾波形， 上变频啁啾波形以提供用于激发采样的啁啾激励信号，接收来自采样的发射，至少部分地由啁啾激励信号引起的发射，以及通过基于指定的信号将接收到的发射与信号进行混合来下变频接收的发射 下变频LO信号，以在模数转换器（ADC）的带宽内提供下变频发射信号。 指定的啁啾波形可以包括第一持续时间期间的第一啁啾波形和第二持续时间内的第二啁啾波形。

公开(公告)号：US20160290864A1

公开(公告)日：2016-10-06

申请号：US15003891

申请日：2016-01-22

Applicant: Rigaku Raman Technologies, Inc.

Inventor： Eric Roy ,  Jason Booth ,  Claude Robotham ,  Federico Izzia

IPC: G01J3/02

CPC classification number: G01J3/0297 ,  G01J3/28 ,  G01J3/2803 ,  G01J3/44 ,  G01J3/4406 ,  G01J3/443

Abstract: This invention relates to a system and method to improve the signal to noise ratio (SNR) of optical spectrometers that are limited by nonrandom or fixed pattern noise. A signal from a sample is collected using a short test exposure, a total observation time to maximize SNR is calculated, and the total observation time is achieved by averaging multiple exposures whose time is selected based on the time dependent noise structure of the detector. Moreover, with a priori knowledge of the time dependent noise structure of the spectrometer, this method is easily automatable and can maximize SNR for a spectrum of an unknown compound without any user input.

Abstract translation: 本发明涉及一种改善受非随机或固定模式噪声限制的光谱仪的信噪比（SNR）的系统和方法。 使用短测试曝光来收集来自样本的信号，计算最大化SNR的总观察时间，并且通过基于检测器的时间相关噪声结构选择时间的多次曝光来平均多次曝光来实现总观察时间。 此外，利用对光谱仪的时间依赖噪声结构的先验知识，该方法易于自动化，并且可以使未知化合物的光谱的SNR最大化而无需任何用户输入。

公开(公告)号：US09443704B2

公开(公告)日：2016-09-13

申请号：US15074204

申请日：2016-03-18

Applicant: Hitachi High-Technologies Corporation

Inventor： Ryoji Asakura ,  Kenji Tamaki ,  Akira Kagoshima ,  Daisuke Shiraishi

IPC: C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32926 ,  G01J3/28 ,  G01J3/443 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32972 ,  H01J37/3299 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67253

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.