Abstract:
An ultra-miniaturized electron optical microcolumn is provided. The electron optical microcolumn includes an electron-emitting source emitting electrons using a field emission principle, an extraction electrode causing the emission of electrons from the electron-emitting source, a focusing electrode to which voltage is flexibly applied in response to a working distance to a target for regulating a focusing force of electron beams emitted from the electron-emitting source, an acceleration electrode accelerating electrons emitted by the extraction electrode, a limit electrode regulating an amount and a size of electron beams using electrons accelerated by the acceleration electrode, and a deflector deflecting electron beams towards the target.
Abstract:
The power supply device (14) for an ion-bombardment-induced secondary-emission electron source in a low-pressure chamber includes a control input, two high-voltage outputs, an element for generating a plurality of positive pulses on a high-voltage output, and an element for generating a negative pulse on the other high-voltage output after at least some of the positive pulses.
Abstract:
A system and method for producing a continuous or pulsed source of high energy electrons at or near atmospheric pressure is disclosed. High energy electrons are used to ionize analyte molecules in ambient air through collisions with reactant ions. The device includes an electron emitter, electron optics, and a thin membrane in an evacuated tube. The electron emitter may include a photocathode surface mounted on an optically transparent window and an external source of UV photons. The transparent window may include a UV transparent window mounted on an evacuated tube and/or the evacuated tube may be a transparent tube on which a photocathode surface film is deposited. The electron optics may include successive electrodes biased at increasing voltages. The membrane may include a material transparent or semi-transparent to energetic electrons. Upon impacting the membrane, continuous or pulsed electron packets are partially transmitted through to a high pressure ionization region.
Abstract:
A mesh electrode adhesion structure includes: a substrate, and an opening defined in the substrate; a mesh electrode on the substrate, and a first combination groove defined in the mesh electrode; and an adhesion layer between the substrate and the mesh electrode. The mesh electrode includes: a mesh region corresponding to the opening defined in the substrate, and an adhesion region in which the first combination groove exposes the adhesion layer.
Abstract:
A field emission display (FED) and a fabrication method thereof are disclosed. A lower plate of the FED includes: a cathode electrode formed on the substrate; a diffusion blocking layer formed on the cathode electrode; a seed metal layer formed on the diffusion blocking layer; carbon nano-tubes (CNTs) grown as single crystals from the grains of the seed metal layer; a gate insulating layer formed on the substrate on which the cathode electrode, the diffusion blocking layer, and the seed metal layer are formed, in order to cover the CNTs; and a gate electrode formed on the gate insulating layer.
Abstract:
A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port (10), and a high-frequency resonant tuner (16). Here, the apparatus adopts an ultra-small high-frequency accelerator cavity which contains a cavity cell formed only with a smooth and curved surface at an inner face thereof without having a sharp angle part for preventing discharging, obtaining higher strength of high-frequency electric field, and improving high-frequency resonance stability. Further, the photocathode is arranged at an end part of a half cell (5) of the high-frequency acceleration cavity for maximizing electric field strength at the photocathode face, perpendicular incidence of laser is ensured by arranging a laser entering port at a position facing to the photocathode behind an electron beam extraction port of the high-frequency acceleration cavity for maximizing quality of short-bunch photoelectrons, and a high-frequency power input coupler port is arranged at a side part of the cell of the high-frequency acceleration cavity for enhancing high-frequency electric field strength. According to the above, it is possible to provide a small photocathode high-frequency electron-gun cavity apparatus capable of generating a high-strength and high-quality electron beam.
Abstract:
In an electron microscope having a magnetic field immersion type cold-FE electron gun, the electron gun and the electron microscope are provided with high observation efficiency and the focal distance of the electron gun does not change during use. The degree of vacuum in the electron gun is improved with a getter pump for stabilization. Further, observation efficiency is improved by cleaning the electron source periodically and returning to recorded optical conditions on the occasion.
Abstract:
A method for manufacturing a field electron emission source includes: providing an insulating substrate; patterning a cathode layer on at least one portion of the insulating substrate; forming a number of emitters on the cathode layer; coating a photoresist layer on the insulating substrate, the cathode layer and the emitters; exposing predetermined portions of the photoresist layer to radiation, wherein the exposed portions are corresponding to the emitters; forming a mesh structure on the photoresist layer; and removing the exposed portions of photoresist layer. The method can be easily performed and the achieved the field electron emission source has a high electron emission efficiency.
Abstract:
An electron-emitting device according to the present invention, comprises: an insulating member having a top face, a side face and a recess portion formed between the top face and the side face; a cathode electrode which is disposed on the side face and has an electron emitting portion located in a boundary portion between the side face and the recess portion; and a gate electrode which is disposed on the top face and of which an edge faces the electron emitting portion, wherein the boundary portion in which the electron emitting portion is located has concavity and convexity in a direction parallel to the top face.