公开(公告)号：US20190312176A1

公开(公告)日：2019-10-10

申请号：US16443832

申请日：2019-06-17

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US10050081B2

公开(公告)日：2018-08-14

申请号：US15135584

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/20

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US10326047B2

公开(公告)日：2019-06-18

申请号：US15255161

申请日：2016-09-02

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

IPC: H01L33/06 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

公开(公告)号：US20180374892A1

公开(公告)日：2018-12-27

申请号：US16101681

申请日：2018-08-13

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L27/15 ,  H01L33/20

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L33/20 ,  H01L2933/0016

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US20180130926A1

公开(公告)日：2018-05-10

申请号：US15727545

申请日：2017-10-06

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Sheng-Tsung Hsu ,  Yu-Chen Kuo ,  Chih-Ming Shen ,  Tung-Lin Chuang ,  Tsung-Syun Huang ,  Jing-En Huang

IPC: H01L33/38 ,  H01L33/14 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/387 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.

公开(公告)号：US20160153909A1

公开(公告)日：2016-06-02

申请号：US15016301

申请日：2016-02-05

Applicant: Genesis Photonics Inc.

Inventor： Cheng-Pin Chen ,  Yun-Li Li ,  Shou-Wen Hsu ,  Chih-Hung Tseng ,  Pei-Yi Huang ,  Ching-Cheng Sun ,  Tsung-Syun Huang ,  Yung-Tsung Lin ,  Ping-Tsung Tsai

IPC: G01N21/63 ,  G01N21/88

CPC classification number: G01N21/63 ,  G01N21/6489 ,  G01N21/8806 ,  G01N21/95 ,  G01N21/9501 ,  G01N2021/646 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract translation: 检查装置能够检查至少一个发光装置。 检查装置包括作业机和检查光源。 检查光源设置在工作机上并位于发光装置的上方。 检查光源的主波长小于发光装置的主波长，从而激发发光装置并获得发光装置的光学特性。