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    Light emitting diode and manufacture method thereof
    12.
    发明授权
    Light emitting diode and manufacture method thereof 有权

    公开(公告)号：US10326047B2

    公开(公告)日：2019-06-18

    申请号：US15255161

    申请日：2016-09-02

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

    IPC: H01L33/06 ,  H01L33/38 ,  H01L33/14 ,  H01L33/20

    Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

    LIGHT-EMITTING DIODE CHIP
    13.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开

    公开(公告)号：US20180248078A1

    公开(公告)日：2018-08-30

    申请号：US15965999

    申请日：2018-04-30

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/38 ,  H01L33/14

    CPC classification number: H01L33/38 ,  H01L33/145

    Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

    Micro light emitting diode and manufacturing method thereof
    14.
    发明授权
    Micro light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US10580934B2

    公开(公告)日：2020-03-03

    申请号：US16195812

    申请日：2018-11-19

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L33/08 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L33/06

    Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

    Method of mass transferring electronic device
    16.
    发明授权
    Method of mass transferring electronic device 有权

    公开(公告)号：US10177113B2

    公开(公告)日：2019-01-08

    申请号：US15680225

    申请日：2017-08-18

    Applicant: Genesis Photonics Inc.

    Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

    IPC: H01L21/683 ,  H01L21/78 ,  H01L27/15 ,  H01L33/06 ,  H01L33/60 ,  H01L23/00 ,  H01L25/075 ,  H01L33/62

    Abstract: A method of mass transferring electronic devices includes following steps. A wafer is provided. The wafer includes a substrate and a plurality of electronic devices. The electronic devices are arranged in a matrix on a surface of the substrate. The wafer is attached to a temporary fixing film. The wafer is cut so that the wafer is divided into a plurality of blocks. Each of the blocks includes at least a part of the electronic devices and a sub-substrate. The temporary fixing film is stretched so that the blocks on the temporary fixing film are separated from each other as the temporary fixing film is stretched. At least a part of the blocks is selected as a predetermined bonding portion, and each of the blocks in the predetermined bonding portion is transferred to a carrying substrate in sequence, so that the electronic devices in the predetermined bonding portion arc bonded to the carrying substrate. The sub-substrates of the blocks are removed. Another method of mass transferring electronic devices is also provided.

    Light emitting diode with Bragg reflector
    17.
    发明授权
    Light emitting diode with Bragg reflector 有权

    公开(公告)号：US10038121B2

    公开(公告)日：2018-07-31

    申请号：US15045279

    申请日：2016-02-17

    Applicant: Genesis Photonics Inc.

    Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

    IPC: H01L33/46 ,  H01L33/38

    Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

    LIGHT-EMITTING DIODE CHIP
    19.
    发明申请
    LIGHT-EMITTING DIODE CHIP 审中-公开
    发光二极管芯片

    公开(公告)号：US20160315238A1

    公开(公告)日：2016-10-27

    申请号：US15135574

    申请日：2016-04-22

    Applicant: Genesis Photonics Inc.

    Inventor： Yu-Chen Kuo ,  Teng-Hsien Lai ,  Kai-Shun Kang ,  Yan-Ting Lan ,  Jing-En Huang ,  Cheng-Pin Chen ,  Wei-Chen Chien ,  Chih-Chin Cheng ,  Chih-Hung Tseng

    IPC: H01L33/62 ,  H01L33/36 ,  H01L33/44

    CPC classification number: H01L33/38 ,  H01L33/145

    Abstract: Provided is a light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer therebetween. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is on the second-type doped semiconductor layer. The current-blocking layer is between the current-spreading layer and the second-type doped semiconductor layer. The second electrode is on the current-spreading layer and electrically connected to the second-type doped semiconductor layer. The current-blocking layer has a first surface facing the semiconductor device layer, a second surface back on to the semiconductor device layer, and a first inclined surface. The first inclined surface is connected between the first surface and the second surface and tilted with respect to the first surface and the second surface.

    Abstract translation: 提供了包括半导体器件层，第一电极，电流阻挡层，电流扩展层和第二电极的发光二极管芯片。 半导体器件层包括第一类掺杂半导体层，第二类掺杂半导体层和它们之间的发光层。 第一电极电连接到第一掺杂半导体层。 电流阻挡层位于第二类掺杂半导体层上。 电流阻挡层在电流扩散层和第二类掺杂半导体层之间。 第二电极在电流扩展层上并电连接到第二类掺杂半导体层。 电流阻挡层具有面向半导体器件层的第一表面，反向到半导体器件层的第二表面和第一倾斜表面。 第一倾斜表面连接在第一表面和第二表面之间并相对于第一表面和第二表面倾斜。

    LIGHT-EMITTING DIODE AND MANUFACTURE METHOD THEREOF
    20.
    发明申请
    LIGHT-EMITTING DIODE AND MANUFACTURE METHOD THEREOF 审中-公开

    公开(公告)号：US20190312176A1

    公开(公告)日：2019-10-10

    申请号：US16443832

    申请日：2019-06-17

    Applicant: Genesis Photonics Inc.

    Inventor： Tsung-Syun Huang ,  Jing-En Huang ,  Yu-Chen Kuo ,  Yan-Ting Lan ,  Kai-Shun Kang ,  Fei-Lung Lu ,  Teng-Hsien Lai ,  Yi-Ru Huang

    IPC: H01L33/06 ,  H01L33/38

    Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.

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