公开(公告)号：US09601301B2

公开(公告)日：2017-03-21

申请号：US14283159

申请日：2014-05-20

Applicant: Applied Materials, Inc.

Inventor： Sergey G. Belostotskiy ,  Chinh Dinh ,  Andrew Nguyen ,  Michael G. Chafin

IPC: H01J37/32 ,  H01J37/00 ,  H01L21/683

CPC classification number: H01J37/00 ,  H01J37/32715 ,  H01J37/32935 ,  H01L21/6833

Abstract: A direct (DC) voltage is applied to an electrode at a voltage value to clamp a workpiece to an electrostatic chuck in a processing chamber. The electrode is embedded into the electrostatic chuck. An electrostatic chuck current through the electrode at the DC voltage is measured. A DC self bias induced on the workpiece by a plasma is determined based on the electrostatic chuck current and the applied voltage.

公开(公告)号：US09564285B2

公开(公告)日：2017-02-07

申请号：US13942502

申请日：2013-07-15

Applicant: Lam Research Corporation

Inventor： Andreas Fischer ,  John Holland

IPC: H01J37/32 ,  H01J37/00

CPC classification number: H01J37/00 ,  H01J37/32091 ,  H01J37/32366 ,  H01J37/32385 ,  H01J37/32568 ,  H01J37/32642 ,  H01L2221/00

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract translation: 一种等离子体处理系统，至少具有用于对基板进行等离子体处理并利用至少第一处理状态和第二处理状态的等离子体处理室。 在第一处理过程期间，等离子体存在于衬底的中心区域之上，以在第一处理状态期间至少执行中心区域的等离子体处理。 在第二处理状态期间，等离子体不存在于基板的中心区域上方，但在斜边缘区域附近存在，以至少在第二处理状态期间执行斜面边缘区域的等离子体处理。 在第二处理状态期间，上电极处于RF浮置状态，并且衬底设置在下电极表面上。

公开(公告)号：US09418818B2

公开(公告)日：2016-08-16

申请号：US14422552

申请日：2013-06-28

Applicant: Hitachi High-Technologies Corporation

Inventor： Yusuke Ominami ,  Sukehiro Ito

IPC: H01J37/00 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28 ,  H01J37/26

CPC classification number: H01J37/16 ,  H01J37/00 ,  H01J37/18 ,  H01J37/20 ,  H01J37/244 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/2002 ,  H01J2237/24455 ,  H01J2237/2605

Abstract: A sample observation method includes irradiating a sample with a primary charged particle beam, detecting a secondary charged particle signal obtained by the irradiating, and observing the sample. The method is characterized by causing the primary charged particle beam generated in a charged particle optical lens barrel, which is maintained in a vacuum state, to be transmitted or passed through a separating film disposed to isolate a space in which the sample is placed from the charged particle optical lens barrel; and detecting a transmitted charged particle beam obtained by irradiating the sample, placed in an atmospheric pressure or a predetermined gas atmosphere of a slightly negative pressure state compared with the atmospheric pressure, with the primary charged particle beam.

Abstract translation: 样品观察方法包括用初级带电粒子束照射样品，检测通过照射获得的二次带电粒子信号，并观察样品。 该方法的特征在于使保持在真空状态的带电粒子光学镜筒中产生的初级带电粒子束透过或通过分离膜，以将样品放置的空间从 带电粒子光学镜头镜筒; 并且与初级带电粒子束一起检测放置在与大气压相比的微小负压状态的大气压或预定气体气氛中的样品所获得的透射带电粒子束。

公开(公告)号：US09418049B2

公开(公告)日：2016-08-16

申请号：US13742881

申请日：2013-01-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd ,  National Taiwan University

Inventor： Kuen-Yu Tsai ,  Chun-Hung Liu

IPC: G03F7/20 ,  G06F17/18 ,  H01J37/00 ,  G03F1/70

CPC classification number: G06F17/18 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/705 ,  H01J37/00 ,  H01J37/3174 ,  H01J2237/31761 ,  H01J2237/31762

Abstract: A method for establishing a parametric model of a semiconductor process is provided. A first intermediate result is generated according to layout data and a non-parametric model of the semiconductor process. A first response is obtained according to the first intermediate result. A specific mathematical function is selected from a plurality of mathematical functions, and the parametric model is obtained according to the specific mathematical function. A second intermediate result is generated according to the layout data and the parametric model. A second response is obtained according to the second intermediate result. It is determined whether the parametric model is an optimal model according to the first and second responses.

Abstract translation: 提供了一种用于建立半导体工艺的参数模型的方法。 根据布局数据和半导体工艺的非参数模型生成第一中间结果。 根据第一中间结果获得第一响应。 从多个数学函数中选择具体的数学函数，并且根据具体的数学函数获得参数模型。 根据布局数据和参数模型生成第二个中间结果。 根据第二中间结果获得第二响应。 根据第一和第二响应确定参数模型是否是最优模型。

公开(公告)号：US20160079057A1

公开(公告)日：2016-03-17

申请号：US14485142

申请日：2014-09-12

Applicant: LAM RESEARCH CORPORATION

Inventor： Sesha Varadarajan ,  Shankar Swaminathan ,  Saangrut Sangplung ,  Frank Pasquale ,  Ted Minshall ,  Adrien LaVoie ,  Mohamed Sabri ,  Cody Barnett

IPC: H01L21/02 ,  C23C16/52 ,  C23C16/505 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  C23C16/45544 ,  C23C16/45597 ,  C23C16/4585 ,  C23C16/505 ,  C23C16/52 ,  H01J37/00 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02186 ,  H01L21/02274

Abstract: A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film.

Abstract translation: 用于在衬底上沉积膜的衬底处理系统包括限定反应体积并包括用于支撑衬底的衬底支撑件的处理室。 气体输送系统被配置为将处理气体引入到处理室的反应体积中。 等离子体发生器被配置为在反应体积中选择性地产生RF等离子体。 夹持系统被配置为在膜的沉积期间将衬底夹持到衬底支撑件。 背面清洗系统被配置为在膜的沉积期间将反应气体供应到衬底的后侧边缘以净化后侧边缘。

公开(公告)号：US08772710B2

公开(公告)日：2014-07-08

申请号：US14010130

申请日：2013-08-26

Applicant: Purdue Research Foundation

Inventor： Zheng Ouyang ,  Jason Harper ,  Nicholas Charipar ,  Robert Graham Cooks

IPC: H01J49/00 ,  H01J49/10

CPC classification number: H01J37/32009 ,  H01J27/022 ,  H01J37/00 ,  H01J37/32348 ,  H01J49/02 ,  H01J49/105 ,  H01J49/142 ,  H01J2237/0044 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/30 ,  H05H2001/2412 ,  H05H2001/2443 ,  H05H2240/10 ,  H05H2240/20 ,  Y10T436/145555 ,  Y10T436/147777 ,  Y10T436/173076 ,  Y10T436/203332 ,  Y10T436/24

Abstract: The present invention generally relates to a low temperature plasma probe for desorbing and ionizing at least one analyte in a sample material and methods of use thereof. In one embodiment, the invention generally relates to a low temperature plasma probe including: a housing having a discharge gas inlet port, a probe tip, two electrodes, and a dielectric barrier, in which the two electrodes are separated by the dielectric barrier, in which application of voltage from a power supply generates a low temperature plasma, and in which the low temperature plasma is propelled out of the discharge region by the electric field and/or the discharge gas flow.

Abstract translation: 本发明一般涉及用于解吸和电离样品中至少一种分析物的低温等离子体探针及其使用方法。 在一个实施方案中，本发明一般涉及一种低温等离子体探针，其包括：壳体，其具有放电气体入口端口，探针尖端，两个电极和介电屏障，其中两个电极由电介质屏障隔开， 来自电源的电压的施加产生低温等离子体，其中通过电场和/或放电气体流将低温等离子体推出排出区域。

公开(公告)号：US20140011717A1

公开(公告)日：2014-01-09

申请号：US13833707

申请日：2013-03-15

Applicant: Jackson Thornton ,  Vinay G. Sakhrani ,  Charles Tomasino ,  Robert A. Mineo

Inventor： Jackson Thornton ,  Vinay G. Sakhrani ,  Charles Tomasino ,  Robert A. Mineo

IPC: C10M155/02 ,  C10M147/04

CPC classification number: C10M107/50 ,  A61M5/3129 ,  A61M5/31513 ,  A61M2005/3131 ,  C10M107/38 ,  C10M147/04 ,  C10M155/02 ,  C10M177/00 ,  C10M2213/0606 ,  C10M2229/0405 ,  C10M2229/0415 ,  C10N2230/06 ,  C10N2240/66 ,  C10N2280/00 ,  H01J37/00 ,  H01J37/321 ,  H01J37/32192 ,  H05H2001/466 ,  H05H2001/4667

Abstract: The present application is directed to methods and devices for altering material properties of lubricants and other cross-linkable compounds comprising organic or organometallic materials through exposure to energized gaseous species. The energized gaseous species may create reactive sites among lubricant molecules that may alter their material properties by cross-linking at least a portion of the lubricant molecules. The cross-linked lubricant may reduce the ability of the lubricant to migrate away when force is applied between lubricated sliding friction surfaces.

Abstract translation: 本申请涉及用于通过暴露于通电的气态物质来改变润滑剂和包括有机或有机金属材料的其它可交联化合物的材料性质的方法和装置。 激发的气态物质可以在润滑剂分子之间产生可能通过交联至少一部分润滑剂分子来改变其材料性质的反应性位点。 当在润滑的滑动摩擦表面之间施加力时，交联润滑剂可以降低润滑剂迁移的能力。

公开(公告)号：US20130187058A1

公开(公告)日：2013-07-25

申请号：US13648887

申请日：2012-10-10

Applicant: FEI COMPANY

Inventor： Lynwood W. Swanson ,  Gregory A. Schwind ,  Sean Kellogg ,  Kun Liu

IPC: G01T1/29

CPC classification number: H01J37/00 ,  G01T1/29 ,  H01J37/02 ,  H01J37/073 ,  H01J2237/06316 ,  H01J2237/06341 ,  H01J2237/065

Abstract: The state of an emitter can be determined by measurements of how the current changes with the extraction voltage. A field factor β function is determined by series of relatively simple measurements of charged particles emitted at different conditions. The field factor can then be used to determine derived characteristics of the emission that, in the prior art, were difficult to determine without removing the source from the focusing column and mounting it in a specialized apparatus. The relations are determined by the source configuration and have been found to be independent of the emitter shape, and so emission character can be determined as the emitter shape changes over time, without having to determine the emitter shape and without having to redefine the relation between the field factor and the series of relatively simple measurements, and the relationships between the field factor and other emission parameters.

Abstract translation: 发射极的状态可以通过测量电流如何随提取电压而变化来确定。 场因子β函数由在不同条件下发射的带电粒子的一系列相对简单的测量来确定。 然后可以使用场因子来确定发射的导出特性，在现有技术中难以确定，而不需要从聚焦柱移除源并将其安装在专门的装置中。 关系由源配置确定，并且已经被发现与发射体形状无关，因此发射体形状随着时间的推移而被确定，而不必确定发射体形状，而不必重新定义发射体形状之间的关系 场因子和一系列相对简单的测量，以及场因子与其他发射参数之间的关系。

公开(公告)号：US20110042560A1

公开(公告)日：2011-02-24

申请号：US12863801

申请日：2009-02-11

Applicant: Zheng Ouyang ,  Jason Harper ,  Nicholas Charipar ,  Robert Graham Cooks

Inventor： Zheng Ouyang ,  Jason Harper ,  Nicholas Charipar ,  Robert Graham Cooks

IPC: H01J49/26

CPC classification number: H01J37/32009 ,  H01J27/022 ,  H01J37/00 ,  H01J37/32348 ,  H01J49/02 ,  H01J49/105 ,  H01J49/142 ,  H01J2237/0044 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/30 ,  H05H2001/2412 ,  H05H2001/2443 ,  H05H2240/10 ,  H05H2240/20 ,  Y10T436/145555 ,  Y10T436/147777 ,  Y10T436/173076 ,  Y10T436/203332 ,  Y10T436/24

Abstract: The present invention generally relates to a low temperature plasma probe for desorbing and ionizing at least one analyte in a sample material and methods of use thereof. In one embodiment, the invention generally relates to a low temperature plasma probe including: a housing having a discharge gas inlet port, a probe tip, two electrodes, and a dielectric barrier, in which the two electrodes are separated by the dielectric barrier, in which application of voltage from a power supply generates a low temperature plasma, and in which the low temperature plasma is propelled out of the discharge region by the electric field and/or the discharge gas flow.

Abstract translation: 本发明一般涉及用于解吸和电离样品中至少一种分析物的低温等离子体探针及其使用方法。 在一个实施方案中，本发明一般涉及一种低温等离子体探针，其包括：壳体，其具有放电气体入口端口，探针尖端，两个电极和介电屏障，其中两个电极由电介质屏障隔开， 来自电源的电压的施加产生低温等离子体，其中通过电场和/或放电气体流将低温等离子体推出排出区域。

公开(公告)号：US20080078744A1

公开(公告)日：2008-04-03

申请号：US11528275

申请日：2006-09-28

Applicant: Ing-Yann Albert Wang ,  Robert Chebi

Inventor： Ing-Yann Albert Wang ,  Robert Chebi

IPC: C23F1/00 ,  H01L21/302

CPC classification number: H01J37/16 ,  H01J37/00 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834

Abstract: A vacuum chamber for passivation and/or stripping a photoresist layer formed on a semiconductor substrate. The chamber includes an internal chamber body that forms a cavity to surround the substrate and has a plurality of gas passages extending therethrough to the cavity and one or more heaters to heat the internal chamber body. The internal chamber body is slidably mounted on an external chamber body that surrounds a side of the internal chamber with a gap therebetween. The device also includes: an exhaust unit operative to pump the gas from the cavity; a chamber top mounted on the internal chamber body to cover a top surface of the internal chamber body with a gap therebetween and having an opening in fluid communication with the gas passages; and a plasma source operative to energize the gas into a plasma state and coupled to the opening for fluid communication with the cavity.

Abstract translation: 一种用于钝化和/或剥离形成在半导体衬底上的光致抗蚀剂层的真空室。 该腔室包括一个内部腔体，它形成一个腔体以包围衬底并具有多个通过其延伸到腔体的气体通道和一个或多个加热器来加热内部腔体。 内部室主体可滑动地安装在外部室主体上，该外部室主体围绕内部腔室的一侧具有间隙。 该装置还包括：排气单元，用于从空腔泵送气体; 安装在内部室主体上的室顶部，以覆盖内部室主体的顶表面，其间具有间隙，并具有与气体通道流体连通的开口; 以及等离子体源，用于将气体激发成等离子体状态并且耦合到开口以与空腔流体连通。