-
公开(公告)号：US20180057354A1
公开(公告)日：2018-03-01
申请号：US15293855
申请日：2016-10-14
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Chih-Fan Hu , Chia-Wei Lee , Chang-Sheng Hsu , Weng-Yi Chen
CPC classification number: B81B7/007 , B81B3/0081 , B81B2201/0214 , B81B2201/0292 , B81B2207/012 , B81B2207/07 , G01N27/128
Abstract: A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.
-
公开(公告)号：US20170370793A1
公开(公告)日：2017-12-28
申请号：US15192311
申请日：2016-06-24
Applicant: Honeywell International Inc.
Inventor： Richard Wade , Alistair David Bradley
CPC classification number: G01L9/0055 , B81B3/0021 , B81B2201/0292 , B81B2203/0127 , B81B2203/0315 , B81C1/00269 , B81C2201/013 , B81C2203/0109 , G01L1/16 , G01L1/18
Abstract: Disclosed herein are force sensors which include a sense die assembly and methods for manufacturing the sense die assembly and the force sensor. The disclosed sense die assembly, force sensor, and methods utilize wafer-level retention to hold an actuation element in a cavity of the sense die.
-
公开(公告)号：US20170369305A1
公开(公告)日：2017-12-28
申请号：US15195061
申请日：2016-06-28
Applicant: Robert Bosch GmbH
Inventor： Mikko VA Suvanto
CPC classification number: B81B7/008 , B81B2201/0207 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2201/0292 , B81B2207/012 , B81C1/0023 , H01L2224/48137 , H04R1/326 , H04R2201/003
Abstract: A microelectromechanical system (MEMS) sensor device includes a package housing having a top member, bottom member, and a spacer coupled the top member to the bottom member, defining a cavity. At least one sensor circuit and a MEMS sensor disposed within the cavity of the package housing. A first opening formed on the package housing a control device embedded within the package housing is electrically coupled to the sensor circuit and is controlled to tune the MEMS sensor from a directional mode to an omni-directional mode.
-
公开(公告)号：US09822002B1
公开(公告)日：2017-11-21
申请号：US15262897
申请日：2016-09-12
Applicant: International Business Machines Corporation
Inventor： Paul S. Andry , Huan Hu , Katsuyuki Sakuma
CPC classification number: B81C1/0038 , B81B3/0097 , B81B2201/0292 , B81B2207/07 , B81C2201/0195 , H01L51/003 , H01L51/0097
Abstract: Aspects include a method of manufacturing a flexible electronic structure that includes a metal or doped silicon substrate. Aspects include depositing an adhesive layer on the top side of the structure. Aspects also include depositing a release layer and a glass layer on the top side of the structure. Aspects also include reducing a thickness of the silicon substrate on the bottom side of the structure.
-
225.发明申请公开(公告)号：US20170267518A1
公开(公告)日：2017-09-21
申请号：US15443320
申请日：2017-02-27
Applicant: SEIKO EPSON CORPORATION
Inventor： Takuya KINUGAWA , Yusuke MATSUZAWA , Hiroyuki SHIMADA
CPC classification number: B81B7/0038 , B81B2201/0264 , B81B2201/0292 , B81B2203/0127 , B81C1/00182 , B81C1/00666 , B81C2203/019
Abstract: A pressure sensor includes a silicon substrate which has a diaphragm, a frame-shaped side wall section which is placed on one surface side of the silicon substrate so as to surround the diaphragm in a plan view, a lid section which is placed so as to cover an opening of the side wall section and has a through-hole communicating inside and outside the side wall section, a sealing section which is placed on the lid section and seals the through-hole, and a pressure reference chamber which is defined by the silicon substrate, the side wall section, the lid section, and the sealing section, wherein a surface facing the pressure reference chamber of each of the side wall section and the lid section contains a silicon material.
-
Patent Agency Ranking
公开(公告)号：US20170248628A1
公开(公告)日：2017-08-31
申请号：US15444162
申请日：2017-02-27
Applicant: mCube, Inc.
Inventor： Sanjay BHANDARI , Ken WANG , Ben LEE
CPC classification number: G01P15/08 , B81B7/0074 , B81B7/0087 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0292 , B81B2201/047 , B81B2207/012 , G01P15/0802 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: A method for operating an electronic device comprising a first and second MEMS device and a semiconductor substrate disposed upon a mounting substrate includes subjecting the first MEMS device and the second MEMS device to physical perturbations, wherein the physical perturbations comprise first physical perturbations associated with the first MEMS device and second physical perturbations associated with the second MEMS device, wherein the first physical perturbations and the second physical perturbations are substantially contemporaneous, determining in a plurality of CMOS circuitry formed within the one or more semiconductor substrates, first physical perturbation data from the first MEMS device in response to the first physical perturbations and second physical perturbation data from the second MEMS device in response to the second physical perturbations, determining output data in response to the first physical perturbation data and to the second physical perturbation data, and outputting the output data.
-
公开(公告)号：US09738516B2
公开(公告)日：2017-08-22
申请号：US14699094
申请日：2015-04-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou , Chih-Jen Chan , Chia-Shiung Tsai , Ru-Liang Lee , Yuan-Chih Hsieh
CPC classification number: B81C1/00595 , B81B7/007 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2203/0109 , B81C1/00357 , B81C1/00801 , B81C2201/0132
Abstract: A method of forming an IC (integrated circuit) device is provided. The method includes receiving a first wafer including a first substrate and including a plasma-reflecting layer disposed on an upper surface thereof. The plasma-reflecting layer is configured to reflect a plasma therefrom. A dielectric protection layer is formed on a lower surface of a second wafer, wherein the second wafer includes a second substrate. The second wafer is bonded to the first wafer, such that a cavity is formed between the plasma-reflecting layer and the dielectric protection layer. An etch process is performed with the plasma to form an opening extending from an upper surface of the second wafer and through the dielectric protection layer into the cavity. A resulting structure of the above method is also provided.
-
公开(公告)号：US20170234744A1
公开(公告)日：2017-08-17
申请号：US15134395
申请日：2016-04-21
Applicant: GlobalMEMS Co., Ltd.
Inventor： Hsi-Wen Tung , Ming-Ching Wu
CPC classification number: G01L1/18 , B81B7/0016 , B81B2201/0264 , B81B2201/0292 , G01L1/2293 , G01L1/26 , G01L5/162 , G06F3/0414
Abstract: A MEMS force sensor including a first substrate, a second substrate and a plurality of conductive terminals is provided. The second substrate is disposed opposite to the first substrate and includes a deformable portion and a force receiving portion. The deformable portion has a plurality of sensing elements. The force receiving portion protrudes from a surface of the deformable portion which is back facing to the first substrate, such that a cavity is formed above the deformable portion. The conductive terminals are electrically connected to the sensing elements, and the conductive terminals are centrally disposed under the cavity. The second substrate is fixed with the first substrate through the conductive terminals. A force sensing apparatus is also provided.
-
公开(公告)号：US09728652B2
公开(公告)日：2017-08-08
申请号：US13358316
申请日：2012-01-25
Applicant: Klaus Elian , Franz-Peter Kalz , Horst Theuss
Inventor： Klaus Elian , Franz-Peter Kalz , Horst Theuss
CPC classification number: H01L29/84 , B81B2201/0235 , B81B2201/025 , B81B2201/0292 , B81B2203/0361 , B81C1/00246 , G01L1/20 , G01P15/124
Abstract: A sensor device includes a semiconductor chip. The semiconductor chip has a sensing region sensitive to mechanical loading. A pillar is mechanically coupled to the sensing region.
-
公开(公告)号：US09708176B2
公开(公告)日：2017-07-18
申请号：US14723927
申请日：2015-05-28
Applicant: InvenSense, Inc.
Inventor： Matthew Thompson , Joseph Seeger
IPC: B81B3/00
CPC classification number: B81B3/0086 , B81B7/02 , B81B2201/014 , B81B2201/0214 , B81B2201/0235 , B81B2201/0242 , B81B2201/0257 , B81B2201/0264 , B81B2201/0271 , B81B2201/0292 , B81B2201/036 , B81B2203/0118 , B81B2203/0307 , B81B2203/04 , B81B2207/012 , B81C2203/0792 , H01H1/0036
Abstract: A system and/or method for utilizing MEMS switching technology to operate MEMS sensors. As a non-limiting example, a MEMS switch may be utilized to control DC and/or AC bias applied to MEMS sensor structures. Also for example, one or more MEMS switches may be utilized to provide drive signals to MEMS sensors (e.g., to provide a drive signal to a MEMS gyroscope).
-
-
-
-
-
-
-
-
-
Search Results
275
records
(took 0.016 seconds)
