公开(公告)号：US20030211752A1

公开(公告)日：2003-11-13

申请号：US10137543

申请日：2002-05-01

Inventor： Michael Rattner ,  Jeffrey D. Chinn

IPC: H01L021/302 ,  H01L021/461

CPC classification number: B81C1/00611 ,  B81B2203/033 ,  B81C2201/0126 ,  B81C2201/0178 ,  H01L21/3065 ,  H01L21/30655

Abstract: Disclosed herein is a method of smoothing a trench sidewall after a deep trench silicon etch process which minimizes sidewall scalloping present after the silicon trench etch. The method comprises exposing the silicon trench sidewall to a plasma generated from a fluorine-containing gas, at a process chamber pressure within the range of about 1 mTorr to about 30 mTorr, for a time period within the range of about 10 seconds to about 600 seconds. A substrate bias voltage within the range of about null10 V to about null40 V is applied during the performance of the post-etch treatment method of the invention.

Abstract translation: 这里公开了一种在深沟槽硅蚀刻工艺之后平滑沟槽侧壁的方法，其最小化在硅沟槽蚀刻之后存在的侧壁扇形。 该方法包括将硅沟槽侧壁暴露于在约1mTorr至约30mTorr范围内的处理室压力下从含氟气体产生的等离子体，时间范围为约10秒至约600 秒。 在本发明的蚀刻后处理方法的执行期间，施加约-10V至约-40V范围内的衬底偏置电压。

公开(公告)号：US20240165663A1

公开(公告)日：2024-05-23

申请号：US18347113

申请日：2023-07-05

Applicant: The Board of Trustees of the Leland Stanford Junior University

Inventor： Bo Ma ,  Kamyar Firouzi ,  Butrus T. Khuri-Yakub ,  Jose Joseph

IPC: B06B1/02 ,  B06B1/06 ,  B81B3/00 ,  B81C1/00 ,  G01N29/06 ,  G01N29/22 ,  G01N29/24

CPC classification number: B06B1/0215 ,  B06B1/0292 ,  B06B1/0651 ,  B06B1/0662 ,  B81B3/0021 ,  B81C1/00166 ,  G01N29/0654 ,  G01N29/2406 ,  B06B2201/55 ,  B81B2201/0271 ,  B81B2203/04 ,  B81C2201/0157 ,  B81C2201/0178 ,  G01N29/22

Abstract: Aspects of this disclosure relate to driving a capacitive micromachined ultrasonic transducer (CMUT) with a pulse train of unipolar pulses. The CMUT may be electrically excited with a pulse train of unipolar pulses such that the CMUT operates in a continuous wave mode. In some embodiments, the CMUT may have a contoured electrode.

公开(公告)号：US20230312334A1

公开(公告)日：2023-10-05

申请号：US18124788

申请日：2023-03-22

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Siarhei Dmitrievich Barsukou

IPC: B81B3/00 ,  H10N30/30 ,  B81C1/00 ,  H10N30/87 ,  H04R17/02

CPC classification number: B81B3/0021 ,  H10N30/30 ,  B81C1/0015 ,  H10N30/872 ,  H04R17/02 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/04 ,  H04R2201/003 ,  B81C2201/0178 ,  B81C2201/013

Abstract: A piezoelectric microelectromechanical systems microphone is provided comprising a sensor, an anchor region at which the sensor is supported by a substrate, a first region of the sensor adjacent to the anchor region, the first region having at least one piezoelectric layer and at least one electrode, and a second region of the sensor, the second region being adjacent to the first region, having at least one piezoelectric layer and at least one electrode, and having a thickness less than the thickness of the first region. A method for manufacturing a piezoelectric microelectromechanical systems microphone is also provided.

公开(公告)号：US20180148328A1

公开(公告)日：2018-05-31

申请号：US15825818

申请日：2017-11-29

Applicant: Commissariat a l'energie atomique et aux energies alternatives

Inventor： Vincent AGACHE ,  Francois BALERAS

IPC: B81C1/00

CPC classification number: B81C1/00476 ,  B81B3/0021 ,  B81B2201/0214 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81C1/00944 ,  B81C1/00952 ,  B81C2201/0109 ,  B81C2201/0132 ,  B81C2201/0176 ,  B81C2201/0178 ,  B81C2201/0181 ,  B81C2201/019 ,  B81C2201/053

Abstract: The invention is a process for producing an electromechanical device including a movable portion that is able to deform with respect to a fixed portion. The process implements steps based on fabrication microtechnologies, applied to a substrate including an upper layer, an intermediate layer and a lower layer. These steps are: a) forming first apertures in the upper layer; b) forming an empty cavity in the intermediate layer, which step is referred to as a pre-release step because a central portion of the upper layer lying between the first apertures is pre-released; c) applying what is called a blocking layer to the upper layer, this layer covering the first apertures, the blocking layer and the central portion together forming a suspended microstructure above the empty cavity; d) producing a boundary trench in the suspended microstructure, so as to form, in this microstructure, a movable portion and a fixed portion, the movable portion forming a movable member of the electromechanical device.

公开(公告)号：US08992784B2

公开(公告)日：2015-03-31

申请号：US13386049

申请日：2010-07-20

Applicant: Nakis Karapatis

Inventor： Nakis Karapatis

IPC: B81C1/00

CPC classification number: B81C1/00682 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/0178 ,  Y10T29/49986

Abstract: A method of fabricating a reinforced silicon micromechanical part includes: micro-machining the part, or a batch of parts in a silicon wafer; forming a silicon dioxide layer over the entire surface of the part, in one or plural operations, so as to obtain a thickness of silicon dioxide that is at least five times greater than the thickness of native silicon dioxide; and removing the silicon dioxide layer by etching.

Abstract translation: 制造增强硅微机械部件的方法包括：在硅晶片中对所述部件或一批部件进行微加工; 在一个或多个操作中在整个表面上形成二氧化硅层，以获得比天然二氧化硅的厚度大至少五倍的二氧化硅的厚度; 并通过蚀刻去除二氧化硅层。

公开(公告)号：US08828772B2

公开(公告)日：2014-09-09

申请号：US13412257

申请日：2012-03-05

Applicant: Te-Hao Lee

Inventor： Te-Hao Lee

IPC: H01L21/316

CPC classification number: B81C1/00619 ,  B81C2201/0122 ,  B81C2201/0178

Abstract: An HF vapor etch etches high aspect ratio openings to form MEMS devices and other tightly-packed semiconductor devices with 0.2 um air gaps between structures. The HF vapor etch etches oxide plugs and gaps with void portions and oxide liner portions and further etches oxide layers that are buried beneath silicon and other structures and is ideally suited to release cantilevers and other MEMS devices. The HF vapor etches at room temperature and atmospheric pressure in one embodiment. A process sequence is provided that forms MEMS devices including cantilevers and lateral, in-plane electrodes that are stationary and vibration resistant.

Abstract translation: HF蒸汽蚀刻蚀刻高纵横比开口以形成MEMS器件和其他紧密堆积的半导体器件，其中在结构之间具有0.2um的气隙。 HF蒸汽蚀刻蚀刻具有空隙部分和氧化物衬垫部分的氧化物塞和间隙，并进一步蚀刻氧化物层，其被埋在硅和其它结构之下，并且理想地适合于释放悬臂和其它MEMS器件。 在一个实施方案中，HF蒸气在室温和大气压下蚀刻。 提供了一种形成MEMS器件的工艺顺序，其包括静止和抗振动的悬臂和侧向平面内的电极。

公开(公告)号：US08685777B2

公开(公告)日：2014-04-01

申请号：US13176371

申请日：2011-07-05

Applicant: Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

Inventor： Christel Dieppedale ,  Stephan Borel ,  Bruno Reig ,  Henri Sibuet

IPC: H01L21/02 ,  B81C1/00 ,  H01H1/00

CPC classification number: B81C1/00158 ,  B81B2201/018 ,  B81B2201/0264 ,  B81B2203/0118 ,  B81B2203/0361 ,  B81C1/00492 ,  B81C2201/0178 ,  H01H1/0036

Abstract: The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Abstract translation: 限定体积的半导体固定结构（例如MEMS微机电系统）的制造包括：根据与元件相关联的功能距离预先确定厚度。 通过衬底的热氧化在衬底上形成至少一个元件，以便形成氧化物层，然后选择性地蚀刻氧化物层，以便通过掩埋下面的衬底限定蚀刻部分中的体积，从而限定 元素在未蚀刻部分中，并且随后氧化基底以形成氧化物层，以便在功能距离处获得元件。

公开(公告)号：US20130221495A1

公开(公告)日：2013-08-29

申请号：US13721496

申请日：2012-12-20

Applicant: The Hong Kong University of Science and Technology

Inventor： Man WONG ,  Fan ZENG

IPC: H01L21/461 ,  H01L29/16

CPC classification number: H01L21/461 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00828 ,  B01J2219/00837 ,  B01J2219/0086 ,  B01L3/502707 ,  B01L2300/0816 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C1/00071 ,  B81C2201/0116 ,  B81C2201/0178 ,  H01L29/16

Abstract: Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel.

Abstract translation: 这里描述的是形成在硅衬底的表面下方并平行于其的表面的微通道。 利用硅迁移技术形成埋在硅衬底表面下方的微通道。 蚀刻打开微通道的至少一端。 通过微通道的开口端利用氧化，以促进微通道的受控直径。

公开(公告)号：US07435991B2

公开(公告)日：2008-10-14

申请号：US10588838

申请日：2004-12-20

Applicant: Hans-Peter Baer ,  Arnim Hoechst

Inventor： Hans-Peter Baer ,  Arnim Hoechst

IPC: H01L23/58

CPC classification number: B81C1/00182 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/0178

Abstract: A micromechanical sensor and a method for manufacturing same are described. A secure diaphragm restraint, independent of fluctuations in the cavern etching process due to the process technology, and a free design of the diaphragm are made possible by designing a suitable connection of the diaphragm in an oxide layer created by local oxidation. The micromechanical sensor includes, for example, a substrate, an external oxide layer formed in a laterally external area in the substrate, a diaphragm having multiple perforation holes formed in a laterally internal diaphragm area, a cavern etched in the substrate beneath the diaphragm, whereby the diaphragm is suspended in a suspension area of the external oxide layer which tapers toward connecting points of the diaphragm and the diaphragm is situated in its vertical height between a top side and a bottom side of the external oxide layer.

Abstract translation: 描述了一种微机械传感器及其制造方法。 通过设计通过局部氧化产生的氧化物层中的隔膜的适当连接，可以实现由于工艺技术而独立于洞穴蚀刻工艺的波动和隔膜的自由设计的安全膜片约束。 微机械传感器包括例如基板，形成在基板的横向外部区域中的外部氧化物层，具有形成在横向内部隔膜区域中的多个穿孔的隔膜，在隔膜下方的基板中蚀刻的基底，由此 隔膜悬挂在外部氧化物层的悬垂区域中，该外部氧化物层朝向隔膜的连接点逐渐变细，并且隔膜位于外部氧化物层的顶侧和底侧之间的垂直高度。

公开(公告)号：US07419581B2

公开(公告)日：2008-09-02

申请号：US10474968

申请日：2002-03-05

Applicant: Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

Inventor： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC: B81B1/00 ,  H01L31/028 ,  H01L31/18

CPC classification number: B81B3/0083 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178 ,  C25F3/12 ,  C25F3/14 ,  H01L21/306 ,  H01L21/3081

Abstract: A simple and cost-effective possibility is proposed for producing optically transparent regions (5, 6) in a silicon substrate (1), by the use of which both optically transparent regions of any thickness and optically transparent regions over a cavity in a silicon substrate are able to be implemented.For this purpose, first at least a specified region (5, 6) of the silicon substrate (1) is etched porous. Thereafter, the specified porous region (5, 6) of the silicon substrate (1) is oxidized.

Abstract translation: 提出了在硅衬底（1）中制造光学透明区域（5,6）的简单和成本有效的可能性，其中通过在硅衬底的空腔上使用任何厚度和光学透明区域的两个光学透明区域 能够实施。 为此目的，首先对硅衬底（1）的至少一个特定区域（5,6）进行多孔蚀刻。 此后，硅衬底（1）的规定的多孔区域（5,6）被氧化。