LIGHT EMITTING DIODE
    35.
    发明申请
    LIGHT EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号:US20160240758A1

    公开(公告)日:2016-08-18

    申请号:US15045266

    申请日:2016-02-17

    Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.

    Abstract translation: 提供了一种安装在载体基板上并包括半导体外延结构和至少一个电极焊盘结构的发光二极管(LED)。 半导体外延结构电连接到载体衬底。 电极焊盘结构包括共晶层,阻挡层和延伸层。 共晶层适于与载体基底共晶结合。 阻挡层在共晶层和半导体外延结构之间。 阻挡层阻止共晶粘合过程中共晶层的材料的扩散。 扩展层在共晶层和半导体外延结构之间。 延伸层在共晶接合工艺期间降低由基板的热膨胀和收缩产生的LED上的应力,以防止电极焊盘结构破裂,并且保持LED的质量。

    Light emitting component
    37.
    发明授权
    Light emitting component 有权
    发光元件

    公开(公告)号:US09356205B2

    公开(公告)日:2016-05-31

    申请号:US14462581

    申请日:2014-08-19

    CPC classification number: H01L33/505 H01L33/507 H01L33/54 H01L33/56 H01L33/60

    Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

    Abstract translation: 发光部件包括发光单元,模塑料和波长转换层。 发光单元具有正向发光面。 模塑料覆盖发光单元。 波长转换层设置在模塑料上方。 波长转换层具有与第一表面相对的第一表面和第二表面,其中第一表面位于正向发光表面和第二表面之间,并且第一表面和第二表面中的至少一个是非平面的。

    LIGHT EMITTING UNIT AND LIGHT EMITTING MODULE
    38.
    发明申请
    LIGHT EMITTING UNIT AND LIGHT EMITTING MODULE 审中-公开
    发光单元和发光模块

    公开(公告)号:US20160013384A1

    公开(公告)日:2016-01-14

    申请号:US14474277

    申请日:2014-09-01

    Abstract: A light emitting unit includes multiple light emitting dice, a molding compound, a substrate and a patterned metal layer. Each of the light emitting dice includes a light emitting component, a first electrode and a second electrode. The molding compound encapsulates the light emitting dice and exposes a first surface of the first electrode and a second surface of the second electrode of each of the light emitting dice. The molding compound is located between the substrate and the light emitting dice. The patterned metal layer is disposed on the first surface of the first electrode and the second surface of the second electrode of each of the light emitting dice. The light emitting dice are electrically connected to each other in a series connection, a parallel connection or a series-parallel connection by the patterned metal layer.

    Abstract translation: 发光单元包括多个发光骰子,模制化合物,基底和图案化的金属层。 每个发光管芯包括发光部件,第一电极和第二电极。 模制化合物封装发光管芯并暴露第一电极的第一表面和每个发光管芯的第二电极的第二表面。 模塑料位于基板和发光管之间。 图案化的金属层设置在第一电极的第一表面和每个发光管的第二电极的第二表面上。 发光管芯通过图案化的金属层串联连接,并联连接或串联并联连接。

    PACKAGE STRUCTURE OF LIGHT EMITTING DIODE
    39.
    发明申请
    PACKAGE STRUCTURE OF LIGHT EMITTING DIODE 审中-公开
    发光二极管的封装结构

    公开(公告)号:US20150179896A1

    公开(公告)日:2015-06-25

    申请号:US14576218

    申请日:2014-12-19

    Abstract: A package structure of light emitting diode includes a substrate and a light emitting diode die. The substrate has an upper surface and a lower surface opposite to each other. Two upper metal pads without mutual conduction are arranged on the upper surface. Two lower metal pads without mutual conduction are arranged on the lower surface. The light emitting diode die is disposed across the two upper metal pads. The light emitting diode die has a first electrode and a second electrode electrically connected to the two upper metal pads respectively. Wherein an orthographic projection area of one of the lower metal pads is greater than or equal to an orthographic projection area of the light emitting diode die, and the orthographic projection area of the light emitting diode die is totally located within the orthographic projection area of one of the lower metal pads.

    Abstract translation: 发光二极管的封装结构包括衬底和发光二极管管芯。 基板具有彼此相对的上表面和下表面。 在上表面上设有两个不相互导电的上部金属焊盘。 在下表面上布置两个没有相互导电的下部金属焊盘。 发光二极管管芯设置在两个上部金属焊盘之间。 发光二极管管芯具有分别与两个上部金属焊盘电连接的第一电极和第二电极。 其中一个下部金属焊盘的正投影区域大于或等于发光二极管管芯的正投影区域,并且发光二极管管芯的正投影区域完全位于一个正交投影区域内 的下部金属垫。

    SEMICONDUCTOR LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE
    40.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE 有权
    半导体发光结构和半导体封装结构

    公开(公告)号:US20150179888A1

    公开(公告)日:2015-06-25

    申请号:US14576207

    申请日:2014-12-19

    CPC classification number: H01L33/382 H01L33/486 H01L33/505

    Abstract: A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.

    Abstract translation: 半导体发光结构包括外延结构,N型电极焊盘,P型电极焊盘和绝缘层。 N型电极焊盘和P型电极焊盘分开设置在外延结构上,其中P型电极焊盘具有第一上表面。 绝缘层设置在外延结构上并且位于N型电极焊盘和P型电极焊盘之间,其中绝缘层具有第二上表面。 P型电极焊盘的第一上表面和绝缘层的第二上表面是共面的。

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