Spectrometer
    32.
    发明授权

    公开(公告)号:US09671285B2

    公开(公告)日:2017-06-06

    申请号:US14351809

    申请日:2012-10-09

    Abstract: A spectrometer comprises a substrate and a waveguide on the substrate, the waveguide including an elongate part and a tapered input for guiding electromagnetic radiation to the elongate part. The tapered input includes an input end for receiving the electromagnetic radiation and an output end coupled to the elongate part, the input end being wider than the output end. The spectrometer may further comprise a plurality of resonators coupled to the elongate part of the waveguide.

    Spectrometer and gas analyzer
    33.
    发明授权

    公开(公告)号:US09658154B2

    公开(公告)日:2017-05-23

    申请号:US15157709

    申请日:2016-05-18

    Applicant: SICK AG

    CPC classification number: G01N21/33 G01J3/0205 G01J3/18 G01J3/427 G01N21/31

    Abstract: A spectrometer has an entry aperture for coupling in electromagnetic radiation to be spectroscope, a refractive or diffractive optical element arranged such that electromagnetic radiation which is coupled in through the entry aperture is incident on the refractive or diffractive optical element to be spectrally split there, and at least two individual detectors which, for the detection of different spectral ranges of the split electromagnetic radiation, are arranged next to one another in the direction of the spectral splitting of the electromagnetic radiation. Electromagnetic radiation from a predetermined ultraviolet wavelength range is directed onto one of the individual detectors by the optical element and electromagnetic radiation from a predetermined blue wavelength range is directed onto another of the detectors by the optical element. Electromagnetic radiation from the intermediate wavelength range between the predetermined ultraviolet wavelength range and the predetermined blue wavelength range are not detected.

    STRUCTURED SILICON-BASED THERMAL EMITTER
    40.
    发明申请
    STRUCTURED SILICON-BASED THERMAL EMITTER 有权
    结构硅基热发射体

    公开(公告)号:US20170012199A1

    公开(公告)日:2017-01-12

    申请号:US15203773

    申请日:2016-07-06

    Abstract: An optical radiation source produced from a disordered semiconductor material, such as black silicon, is provided. The optical radiation source includes a semiconductor substrate, a disordered semiconductor structure etched in the semiconductor substrate and a heating element disposed proximal to the disordered semiconductor structure and configured to heat the disordered semiconductor structure to a temperature at which the disordered semiconductor structure emits thermal infrared radiation.

    Abstract translation: 提供由诸如黑色硅的无序半导体材料产生的光辐射源。 光辐射源包括半导体衬底,在半导体衬底中蚀刻的无序半导体结构和设置在无序半导体结构附近的加热元件,其被配置为将无序半导体结构加热到无序半导体结构发射热红外辐射的温度 。

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