PROCESS AND DEVICE FOR PREPARING LASER PVC
    31.
    发明公开

    公开(公告)号:US20240091803A1

    公开(公告)日:2024-03-21

    申请号:US18066293

    申请日:2022-12-15

    CPC classification number: B05B13/0207 B05B15/50 B05C9/14 B05C13/02 B05D3/067

    Abstract: The present invention discloses a process and device for preparing laser PVC. The device includes an upper transmission roller, a support mechanism, a spraying mechanism, an impurity removal mechanism, and a lower transmission roller; the upper transmission roller is disposed above the lower transmission roller, and the two are configured to implement delivery of a PVC film at a station for preparing a laser layer by spraying; the support mechanism is disposed between the upper transmission roller and the lower transmission roller and is in contact with a back surface of the PVC film, and the spraying mechanism is disposed opposite to the support mechanism; and a curing mechanism is disposed in a fitting manner at the coating position; and the impurity removal mechanism is disposed at a front end of the spraying mechanism.

    SUPERSTRATE INCLUDING A BODY AND LAYERS AND METHODS OF FORMING AND USING THE SAME

    公开(公告)号:US20230415195A1

    公开(公告)日:2023-12-28

    申请号:US17809414

    申请日:2022-06-28

    CPC classification number: B05D7/58 H01L21/31058 B05D3/06

    Abstract: A superstrate can include a body, a first layer, and a second layer, wherein the first layer is disposed between the body and the second layer. Each of the first and second layers has a proximal surface and a distal surface opposite the proximal surface, wherein the body is closer to the proximal surface than to the distal surface. An Ra of the distal surface of the second layer is less than an Ra of the distal surface of the first layer. In a method of making the superstrate, the relatively high Ra of the distal surface of the first layer may be related to the process or equipment used in forming the first layer. The second layer can be formed using another superstrate, where the Ra of the distal surface of the second layer is substantially the same as the contact surface of the other superstrate.

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