公开(公告)号：US20200006419A1

公开(公告)日：2020-01-02

申请号：US16564053

申请日：2019-09-09

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L27/15

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US10396255B2

公开(公告)日：2019-08-27

申请号：US15823480

申请日：2017-11-27

Applicant: Genesis Photonics Inc.

Inventor： Kuan-Chieh Huang ,  Shao-Ying Ting ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/50 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60

Abstract: A light emitting component includes a light emitting unit, a molding compound and a wavelength converting layer. The light emitting unit has a forward light emitting surface. The molding compound covers the light emitting unit. The wavelength converting layer is disposed above the molding compound. The wavelength converting layer has a first surface and a second surface opposite to the first surface, wherein the first surface is located between the forward light emitting surface and the second surface, and at least one of the first and second surfaces is non-planar.

公开(公告)号：US20190237627A1

公开(公告)日：2019-08-01

申请号：US16384871

申请日：2019-04-15

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Yu-Yun Lo ,  Chih-Ling Wu ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/42

Abstract: A light emitting diode structure including a substrate, a semiconductor epitaxial structure, a first insulating layer, a first reflective layer, a second reflective layer, a second insulating layer and at least one electrode. The substrate has a tilt surface. The semiconductor epitaxial structure at least exposes the tilt surface. The first insulating layer exposes a portion of the semiconductor epitaxial structure. The first reflective layer is at least partially disposed on the portion of the semiconductor epitaxial structure and electrically connected to the semiconductor epitaxial structure. The second reflective layer is disposed on the first reflective layer and the first insulating layer, and covers at least the portion of the tilt surface. The second insulating layer is disposed on the second reflective layer. The electrode is disposed on the second reflective layer and electrically connected to the first reflective layer and the semiconductor epitaxial structure.

公开(公告)号：US20190088819A1

公开(公告)日：2019-03-21

申请号：US16195812

申请日：2018-11-19

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Yan-Ting Lan ,  Jing-En Huang ,  Yi-Ru Huang

IPC: H01L33/08 ,  H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L27/15 ,  H01L33/00 ,  H01L25/075 ,  H01L33/62 ,  H01L33/06

CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L27/153 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/382 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L2933/0016

Abstract: A μLED including an epitaxial stacked layer, a first electrode and a second electrode is provided. The epitaxial stacked layer includes a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer. The epitaxial stacked layer has a first mesa portion and a second mesa portion to form a first type conductive region and a second type conductive region respectively. The first electrode is disposed on the first mesa portion. The second electrode is disposed on the second mesa portion. The second electrode contacts the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer located at the second mesa portion. Moreover, a manufacturing method of the μLED is also provided.

公开(公告)号：US10177272B2

公开(公告)日：2019-01-08

申请号：US15670050

申请日：2017-08-07

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Jing-En Huang

IPC: H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

Abstract: A method for manufacturing a light-emitting diode (LED) is provided. The method includes following steps. A LED wafer including a substrate and a plurality of light-emitting units formed thereon is provided. At least a portion of the substrate is removed. The LED wafer is fixed on an extensible membrane, wherein the light-emitting unit faces the extensible membrane. The LED wafer is broken to form a plurality of LED dices separated from each other, wherein each LED dice includes at least one light-emitting unit. The extensible membrane is expanded to make a distance between any two of the LED dices become larger.

公开(公告)号：US20180337310A1

公开(公告)日：2018-11-22

申请号：US16049771

申请日：2018-07-30

Applicant: Genesis Photonics Inc.

Inventor： Yi-Ru Huang ,  Tung-Lin Chuang ,  Yan-Ting Lan ,  Sheng-Tsung Hsu ,  Chih-Ming Shen ,  Jing-En Huang ,  Teng-Hsien Lai ,  Hung-Chuan Mai ,  Kuan-Chieh Huang ,  Shao-Ying Ting

IPC: H01L33/46 ,  H01L33/38

CPC classification number: H01L33/46 ,  H01L33/38

Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.

公开(公告)号：US10050081B2

公开(公告)日：2018-08-14

申请号：US15135584

申请日：2016-04-22

Applicant: Genesis Photonics Inc.

Inventor： Tsung-Syun Huang ,  Chih-Chung Kuo ,  Jing-En Huang ,  Shao-Ying Ting

IPC: H01L33/24 ,  H01L27/15 ,  H01L33/20

Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.

公开(公告)号：US20180190882A1

公开(公告)日：2018-07-05

申请号：US15908762

申请日：2018-02-28

Applicant: Genesis Photonics Inc.

Inventor： Jing-En Huang ,  Shao-Ying Ting ,  Chih-Ling Wu ,  Kuan-Yung Liao ,  Yi-Ru Huang ,  Yu-Yun Lo

IPC: H01L33/50 ,  H01L33/58 ,  H01L33/54 ,  H01L33/48

CPC classification number: H01L33/505 ,  H01L33/486 ,  H01L33/50 ,  H01L33/54 ,  H01L33/58

Abstract: A flip chip light emitting diode package structure includes a package carrier, a light guiding unit and at least one light emitting unit. The light guiding unit and the light emitting unit are disposed on the package carrier, and the light emitting unit is located between the light guiding unit and the package carrier. A horizontal projection area of the light guiding unit is greater than that of the light emitting unit. The light emitting unit is adapted to emit a light beam, and the light beam enters the light guiding unit and emits from an upper surface of the light guiding unit away from the light emitting unit.

公开(公告)号：US20180190627A1

公开(公告)日：2018-07-05

申请号：US15896116

申请日：2018-02-14

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Sie-Jhan Wu ,  Jing-En Huang

IPC: H01L25/075 ,  H01L33/56 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/52 ,  H01L33/58 ,  H01L33/62 ,  H01L33/54 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/46 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/005 ,  H01L2933/0058 ,  H01L2924/00014

Abstract: A light-emitting device including a light-emitting unit, an electrode unit, and an insulating unit is provided. The light-emitting unit includes an illuminator and a packaging sealant. The illuminator generates an optical energy by way of electroluminescence, and the packaging sealant is formed on a part of a surface of the illuminator. The electrode unit includes a first electrode and a second electrode respectively formed on the surface of the illuminator on which no packaging sealant is formed. The insulating unit is formed on the surface of the light-emitting unit and includes a first insulating layer protruded between the first electrode and the second electrode. When the light-emitting device of the invention is electrically connected to an external circuit board using solder, the insulating unit effectively separates the elements to avoid the elements being short-circuited by the solder overflowing.

公开(公告)号：US09728672B2

公开(公告)日：2017-08-08

申请号：US15045440

申请日：2016-02-17

Applicant: Genesis Photonics Inc.

Inventor： Shao-Ying Ting ,  Jing-En Huang

IPC: H01L21/683 ,  H01L23/00 ,  H01L21/78 ,  H01L33/00

CPC classification number: H01L33/0079 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834 ,  H01L2221/68381

Abstract: A light-emitting diode (LED) and a method for manufacturing the same are provided. The method includes following steps. An LED wafer is fixed on a crafting table and is processed such that a substrate of the LED wafer has a thickness smaller than or equal to 100 μm. A fixing piece is pasted on the LED wafer surface. The LED wafer is detached from the crafting table. The LED wafer together with the fixing piece are cut and broken, such that the LED wafer forms a plurality of LEDs. The fixing piece is removed. Before the LED wafer is detached from the crafting table, the fixing piece is pasted on the LED wafer to provide a supporting force to the LED wafer to maintain the flatness of the wafer and avoid the wafer being warped or the substrate being broken or damaged, such that product quality and reliability can be improved.