公开(公告)号：US09171703B2

公开(公告)日：2015-10-27

申请号：US14137792

申请日：2013-12-20

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Shuaigang Xiao ,  David Kuo ,  Kim Y. Lee ,  XiaoMin Yang ,  Justin Hwu

IPC: G03F7/26 ,  H01J37/32 ,  C23C16/01 ,  C23C14/34

CPC classification number: H01J37/32651 ,  C23C14/34 ,  C23C16/01 ,  G03F7/0002 ,  G03F7/40 ,  H01J2237/0203 ,  H01J2237/026 ,  H01J2237/3341 ,  H01L21/0337

Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

Abstract translation: 本文提供了一种装置，包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征，其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料，其中所述侧壁保护材料是共形的薄膜沉积的特征，并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。

公开(公告)号：US20150179414A1

公开(公告)日：2015-06-25

申请号：US14137792

申请日：2013-12-20

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Shuaigang Xiao ,  David Kuo ,  Kim Y. Lee ,  XiaoMin Yang ,  Justin Hwu

IPC: H01J37/32 ,  C23C14/34 ,  C23C16/01

CPC classification number: H01J37/32651 ,  C23C14/34 ,  C23C16/01 ,  G03F7/0002 ,  G03F7/40 ,  H01J2237/0203 ,  H01J2237/026 ,  H01J2237/3341 ,  H01L21/0337

Abstract: Provided herein is an apparatus, including a patterned resist overlying a substrate; a number of features of the patterned resist, wherein the number of features respectively includes a number of sidewalls; and a sidewall-protecting material disposed about the number of sidewalls, wherein the sidewall-protecting material is characteristic of a conformal, thin-film deposition, and wherein the sidewall-protecting material facilitates a high-fidelity pattern transfer of the patterned resist to the substrate during etching.

Abstract translation: 本文提供了一种装置，包括覆盖衬底的图案化抗蚀剂; 图案化抗蚀剂的许多特征，其中特征的数量分别包括多个侧壁; 以及围绕所述侧壁数量设置的侧壁保护材料，其中所述侧壁保护材料是共形的薄膜沉积的特征，并且其中所述侧壁保护材料促进所述图案化抗蚀剂的高保真图案转移到 衬底。

公开(公告)号：US08766209B2

公开(公告)日：2014-07-01

申请号：US13187905

申请日：2011-07-21

Applicant: Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

Inventor： Klaus Becker ,  Klaus Petry ,  Piotr Lubicki

IPC: H01J27/00

CPC classification number: H01J37/241 ,  H01J27/022 ,  H01J37/3171 ,  H01J2237/0203 ,  H01J2237/0206 ,  H02H9/02

Abstract: Disclosed is a surge protection system for use with an ion source assembly. The system comprises a high voltage power source coupled in series with a thermionic diode and an ion source assembly. The high voltage power supply is enclosed in the pressure tank and drives the ion source assembly. The thermionic diode is comprised of an insulating tube disposed between the ion source assembly enclosure and the output of the high voltage power supply and makes use of existing ion source assembly components to limit damage to the power supply during arc failures of the ion source assembly.

Abstract translation: 公开了一种用于离子源组件的浪涌保护系统。 该系统包括与热离子二极管和离子源组件串联耦合的高压电源。 高压电源封装在压力罐中并驱动离子源组件。 热离子二极管包括设置在离子源组件外壳和高压电源的输出之间的绝缘管，并且利用现有的离子源组件部件来限制离子源组件的电弧故障期间对电源的损坏。

公开(公告)号：US20120273679A1

公开(公告)日：2012-11-01

申请号：US13511941

申请日：2009-12-07

Applicant: Angus Bewick ,  Santokh Singh Bhadare

Inventor： Angus Bewick ,  Santokh Singh Bhadare

IPC: H01J37/285

CPC classification number: H01J37/244 ,  H01J37/26 ,  H01J2237/0203 ,  H01J2237/024 ,  H01J2237/2442 ,  H01J2237/2445 ,  H01J2237/25

Abstract: An x-ray analyser for a transmission electron microscope is described. The analyser has a silicon drift detector moveable in use between an analysis position and a retracted position. The analyser has a housing having an end portion within which the silicon drift detector is retained. The end portion is formed from a material with a relative magnetic permeability of less than 1.004. The analyser also has an automatic retraction system adapted to move the silicon drift detector from the analysis position to the retracted position upon receipt of a trigger signal indicative of a condition in which the power level received by the silicon drift detector from impinging x-rays or electrons is above a predetermined threshold.

Abstract translation: 描述透射电子显微镜的X射线分析仪。 分析仪具有可在分析位置和缩回位置之间使用的硅漂移检测器。 分析仪具有壳体，其具有保持硅漂移检测器的端部部分。 端部由相对磁导率小于1.004的材料形成。 分析仪还具有自动缩回系统，其适于在接收到指示由硅漂移检测器接收的功率电平撞击X射线的条件的触发信号时将硅漂移检测器从分析位置移动到缩回位置，或 电子高于预定阈值。

公开(公告)号：US08067907B2

公开(公告)日：2011-11-29

申请号：US12388135

申请日：2009-02-18

Applicant: Hiroshi Morita ,  Ryozo Takeuchi ,  Toshiyuki Yokosuka

Inventor： Hiroshi Morita ,  Ryozo Takeuchi ,  Toshiyuki Yokosuka

IPC: H05H9/00

CPC classification number: H05H7/00 ,  H01J37/026 ,  H01J37/04 ,  H01J2237/004 ,  H01J2237/0203 ,  H01J2237/04735

Abstract: In a charged particle accelerator, voltage of several tens of kV is applied between accelerating electrodes. In such a case, electric discharge is sometimes generated between the accelerating electrodes. In the charged particle accelerator, part or entirety of the accelerating electrodes is coated with an electric discharge suppressing layer made of ceramics or alloy having a high melting point as compared with metal. When impurity fine particles are accelerated by an electric field and collide with the electrodes, the electric discharge suppressing layer made of ceramics or alloy prevents metal vapor from being easily generated from the electrodes and an ionized plasma from being easily produced, thus suppressing electric discharge between the electrodes.

Abstract translation: 在带电粒子加速器中，在加速电极之间施加几十kV的电压。 在这种情况下，有时会在加速电极之间产生放电。 在带电粒子加速器中，加速电极的一部分或全部涂覆有与金属相比具有高熔点的陶瓷或合金制成的放电抑制层。 当杂质微粒被电场加速并与电极碰撞时，由陶瓷或合金制成的放电抑制层防止金属蒸气容易地从电极产生，并且电离等离子体容易产生，从而抑制 电极。

公开(公告)号：US07989353B2

公开(公告)日：2011-08-02

申请号：US11968369

申请日：2008-01-02

Applicant: Tadahiro Ishizaka ,  Kentaro Asakura ,  Masanao Ando ,  Toshio Hasegawa

Inventor： Tadahiro Ishizaka ,  Kentaro Asakura ,  Masanao Ando ,  Toshio Hasegawa

IPC: H01L21/302

CPC classification number: H01J37/20 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/0203

Abstract: Method for operating a processing system and refurbishing a ceramic substrate holder within a process chamber of the processing system are described. The method includes plasma processing one or more substrates on the ceramic substrate holder, where the processing causes erosion of a nitride material of the ceramic substrate holder. The method further includes refurbishing the ceramic substrate holder in-situ without a substrate residing on the ceramic substrate holder, where the refurbishing includes exposing the ceramic substrate holder to a plasma-excited nitrogen-containing gas in the process chamber to at least partially reverse the erosion of the nitride material.

Abstract translation: 描述了在处理系统的处理室内操作处理系统和翻新陶瓷衬底保持器的方法。 该方法包括等离子体处理陶瓷衬底保持器上的一个或多个衬底，其中处理引起陶瓷衬底保持器的氮化物材料的侵蚀。 该方法还包括原位翻新陶瓷衬底保持器，而不需要驻留在陶瓷衬底保持器上的衬底，其中翻新包括将陶瓷衬底保持器暴露于处理室中的等离子体激发的含氮气体，以至少部分地将 氮化物材料的侵蚀。

公开(公告)号：US20110084592A1

公开(公告)日：2011-04-14

申请号：US12898665

申请日：2010-10-05

Applicant: Johan Joost Koning ,  Stijn Willem Herman Steenbrink ,  Norman Hendrikus Rudolf Baars ,  Bart Schipper

Inventor： Johan Joost Koning ,  Stijn Willem Herman Steenbrink ,  Norman Hendrikus Rudolf Baars ,  Bart Schipper

IPC: H01J1/52

CPC classification number: H01J37/02 ,  H01J2237/0203 ,  H01J2237/038

Abstract: The invention relates to a high voltage shielding arrangement comprising a first metal part and a second metal part positioned in close vicinity to said first metal part. Said second metal part included in said arrangement to be set at an electrical potential that is lower than the electric potential of the first metal part. Said second metal part having comprising one or more edges and an insulator. The second metal part is at least partially encapsulated by the insulator facing the first metal part.

Abstract translation: 本发明涉及一种高压屏蔽装置，其包括第一金属部件和靠近所述第一金属部件定位的第二金属部件。 包括在所述布置中的所述第二金属部件被设定为低于第一金属部件的电位的电位。 所述第二金属部件包括一个或多个边缘和绝缘体。 第二金属部分至少部分地被面向第一金属部分的绝缘体封装。

公开(公告)号：US20070037532A1

公开(公告)日：2007-02-15

申请号：US11330897

申请日：2006-01-11

Applicant: Joachim Ziegler

Inventor： Joachim Ziegler

IPC: H04B1/04

CPC classification number: H03F1/52 ,  H01J37/32174 ,  H01J2237/0203 ,  H03F3/189 ,  H03F2200/435 ,  H03F2200/444 ,  H03F2200/451 ,  H03F2200/78

Abstract: Disclosed is a method for limiting the voltage applied to a component in a radio frequency path (RF path) of a radio frequency excitation system. According to the method, a radio frequency signal (RF signal) is tapped at a first random point of the RF path, and energy is withdrawn from the RF path when the RF signal tapped at the first point or a value proportional to the tapped RF signal exceeds a reference value, resulting in the component being protected against excess voltages due to disturbances.

Abstract translation: 公开了一种用于限制施加到射频激励系统的射频路径（RF路径）中的部件的电压的方法。 根据该方法，射频信号（RF信号）在RF路径的第一随机点被抽头，并且当RF信号在第一点被抽头或与抽头RF成比例的值时，从RF路径中取出能量 信号超过参考值，导致组件被防止由于干扰而导致的过电压。

公开(公告)号：US06958477B2

公开(公告)日：2005-10-25

申请号：US10695756

申请日：2003-10-30

Applicant: Yoshiaki Kohama

Inventor： Yoshiaki Kohama

IPC: H01J37/04 ,  G01N23/225 ,  G01Q10/00 ,  G01Q20/02 ,  G01Q30/02 ,  H01J37/26 ,  H01J37/28 ,  H01J37/304 ,  H01J37/244

CPC classification number: H01J37/045 ,  G01N23/2251 ,  H01J37/26 ,  H01J37/265 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/0203 ,  H01J2237/1504 ,  H01J2237/151 ,  H01J2237/221 ,  H01J2237/2817

Abstract: An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of election beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.

Abstract translation: 电子束装置防止运动停止或减速引起的剂量快速增加，并且当样本和电子束相对移动时，在用电子束照射样本时保护样本。 电子束源输出电子束。 测量每单位面积照射的选择光束的剂量。 存储部分将每单位面积的预定剂量存储在样品的存储器中。 当每单位面积的测量剂量大于存储部分中存储的每单位面积的剂量时，检测器检测电子束的过度曝光。 控制器控制电子束源以减少电子束单位面积的剂量低于存储部分中存储的每单位面积的剂量。

公开(公告)号：US20050232726A1

公开(公告)日：2005-10-20

申请号：US10519623

申请日：2003-07-01

Applicant: Adrian Murrell

Inventor： Adrian Murrell

IPC: B65G1/00 ,  H01J27/00 ,  H01J37/02 ,  H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/02 ,  H01J2237/0203 ,  H01J2237/022

Abstract: A wafer support for an ion implanter includes a wafer holder and a support arm for the holder in the implant chamber. A portion of the support arm adjacent the wafer holder is at least intermittently exposed to the ion beam during implantation, as a result of the relative scanning of the ion beam and the wafer holder. An arm shield mechanism has a plurality of shielding surfaces which can be selectively disposed to receive the ion beam to protect the exposed portion of the support arm. The shielding surfaces may form a sleeve arranged over the arm which may be rotatable above the arm to present selected surfaces to the ion beam. Cross contamination when successively implanting different species can be reduced by presenting different shield surfaces to the beam.

Abstract translation: 用于离子注入机的晶片支架包括用于植入室中的保持器的晶片保持器和支撑臂。 作为离子束和晶片保持器的相对扫描的结果，在植入期间，与晶片保持器相邻的支撑臂的一部分至少间歇地暴露于离子束。 臂屏蔽机构具有多个屏蔽表面，其可选择性地布置成接收离子束以保护支撑臂的暴露部分。 屏蔽表面可以形成布置在臂上的套筒，其可以在臂上方旋转以将选定的表面提供给离子束。 连续植入不同物种时的交叉污染可以通过向梁提供不同的屏蔽表面而减少。